Method for cleaning bell jar, method for producing polycrystalline silicon, and apparatus for drying bell jar
    2.
    发明授权
    Method for cleaning bell jar, method for producing polycrystalline silicon, and apparatus for drying bell jar 有权
    钟罩的清洗方法,多晶硅的制造方法以及钟罩的干燥装置

    公开(公告)号:US09126242B2

    公开(公告)日:2015-09-08

    申请号:US13704767

    申请日:2011-03-07

    摘要: A bell jar includes a metallic bell jar (1), and a metallic base plate (2) on which the bell jar (1) is placed, and packing (3) seals an inside of a container. To the base plate (2), a pressure gauge (4), a gas introduction line (5), and a gas discharge line (6) are connected so as to allow monitoring of internal pressure of the bell jar (1) and introduction and discharge of a gas. A vacuum pump (7) is provided in a path of the gas discharge line (6), and the vacuum pump (7) reduces internal pressure of the bell jar so as to be lower than vapor pressure of water. The vacuum pump (7) reduces the internal pressure of the bell jar so as to be lower than vapor pressure of water, thereby efficiently removing moisture, and completing drying of the bell jar in a short time.

    摘要翻译: 钟形瓶包括金属钟形瓶(1)和金属底板(2),其上放置钟形罩(1),并且包装(3)密封容器的内部。 连接到基板(2)上的压力计(4),气体引入管线(5)和气体排出管线(6),以便监测钟罩(1)的内部压力和引入 并排出气体。 真空泵(7)设置在气体排出管路(6)的路径中,真空泵(7)将钟罩的内部压力降低到低于水的蒸汽压力。 真空泵(7)将钟罩的内部压力降低到低于水的蒸汽压力,从而有效地去除水分,并在短时间内完成钟罩的干燥。

    Reactor for producing polycrystalline silicon, system for producing polycrystalline silicon, and process for producing polycrystalline silicon
    3.
    发明授权
    Reactor for producing polycrystalline silicon, system for producing polycrystalline silicon, and process for producing polycrystalline silicon 有权
    用于生产多晶硅的反应器,用于生产多晶硅的系统以及用于生产多晶硅的工艺

    公开(公告)号:US09193596B2

    公开(公告)日:2015-11-24

    申请号:US13496002

    申请日:2010-07-09

    摘要: An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).

    摘要翻译: 反应器10的内壁11具有两层结构:在与腐蚀性工艺气体接触的反应器的内侧设置有包括具有高防锈性的合金材料的防腐蚀层11a和用于有效导电的导热层11b 在反应器10的外侧(外壁侧)设置有从内壁面到冷却剂流路13的反应器10内的热量。 防腐层11a包括具有由R = [Cr] + [Ni] -1.5 [Si]定义的值R为40%以上的组成的合金材料,其中[Cr]为质量含量(% (Cr),[Ni]为镍(Ni)的质量含量(质量%),[Si]为硅(Si)的质量含量(质量%)。

    REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON, SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON
    5.
    发明申请
    REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON, SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON 有权
    用于制造多晶硅的反应器,用于生产多晶硅的系统和用于生产多晶硅的方法

    公开(公告)号:US20120237429A1

    公开(公告)日:2012-09-20

    申请号:US13496002

    申请日:2010-07-09

    IPC分类号: B01J19/00 C01B33/027

    摘要: An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).

    摘要翻译: 反应器10的内壁11具有两层结构:在与腐蚀性工艺气体接触的反应器的内侧设置有包括具有高防锈性的合金材料的防腐蚀层11a和用于有效导电的导热层11b 在反应器10的外侧(外壁侧)设置有从内壁面到冷却剂流路13的反应器10内的热量。 防腐层11a包括具有由R = [Cr] + [Ni] -1.5 [Si]定义的值R为40%以上的组成的合金材料,其中[Cr]为质量含量(% (Cr),[Ni]为镍(Ni)的质量含量(质量%),[Si]为硅(Si)的质量含量(质量%)。

    APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON
    7.
    发明申请
    APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON 有权
    用于生产多晶硅的装置和用于生产多晶硅的方法

    公开(公告)号:US20130302528A1

    公开(公告)日:2013-11-14

    申请号:US13979789

    申请日:2011-09-20

    IPC分类号: C23C16/24

    摘要: Raw material gas supply nozzles are arranged within a virtual concentric circle having its center at the center of a disk-like base plate (having an area half as large as an area of the base plate). Raw material gas is ejected at a flow velocity of 150 m/sec or more into a bell jar from the gas supply nozzles. In addition to one gas supply nozzle provided in a center portion of the base plate, three gas supply nozzles can be arranged at the vertex positions of a regular triangle inscribed in a circumscribed circle having its center at the gas supply nozzle in the center portion. With the gas supply nozzles so arranged, a smooth circulating flow is formed within a reactor.

    摘要翻译: 原料气体供给喷嘴配置在其中心位于盘状基板的中心的虚拟同心圆(面积为基板的面积的一半以上)。 原料气体以150m / sec以上的流速从气体供给喷嘴喷射到钟罩中。 除了设置在基板的中心部分中的一个气体供应喷嘴之外,三个气体供应喷嘴可以布置在其中心部分处于气体供应喷嘴的中心的外接圆的正三角形的顶点位置处。 在气体供给喷嘴如此布置的情况下,在反应器内形成平滑的循环流。

    Apparatus for producing polycrystalline silicon and method for producing polycrystalline silicon
    8.
    发明授权
    Apparatus for producing polycrystalline silicon and method for producing polycrystalline silicon 有权
    多晶硅制造装置及多晶硅制造方法

    公开(公告)号:US09416444B2

    公开(公告)日:2016-08-16

    申请号:US13979789

    申请日:2011-09-20

    摘要: Raw material gas supply nozzles are arranged within a virtual concentric circle having its center at the center of a disk-like base plate (having an area half as large as an area of the base plate). Raw material gas is ejected at a flow velocity of 150 m/sec or more into a bell jar from the gas supply nozzles. In addition to one gas supply nozzle provided in a center portion of the base plate, three gas supply nozzles can be arranged at the vertex positions of a regular triangle inscribed in a circumscribed circle having its center at the gas supply nozzle in the center portion. With the gas supply nozzles so arranged, a smooth circulating flow is formed within a reactor.

    摘要翻译: 原料气体供给喷嘴配置在其中心位于盘状基板的中心的虚拟同心圆(面积为基板的面积的一半以上)。 原料气体以150m / sec以上的流速从气体供给喷嘴喷射到钟罩中。 除了设置在基板的中心部分中的一个气体供应喷嘴之外,三个气体供应喷嘴可以布置在其中心部分处于气体供应喷嘴的中心的外接圆的正三角形的顶点位置处。 在气体供给喷嘴如此布置的情况下,在反应器内形成平滑的循环流。

    SILICON CORE WIRE HOLDER AND POLYCRYSTALLINE SILICON MANUFACTURING METHOD
    9.
    发明申请
    SILICON CORE WIRE HOLDER AND POLYCRYSTALLINE SILICON MANUFACTURING METHOD 审中-公开
    硅芯线夹和多晶硅制造方法

    公开(公告)号:US20140030440A1

    公开(公告)日:2014-01-30

    申请号:US14110959

    申请日:2012-04-16

    IPC分类号: C01B33/035

    CPC分类号: C01B33/035

    摘要: A core wire holder 20 is formed with a core wire insert hole 21 having an opening part 22 on an upper surface of a main body and extending toward a lower surface side, and a silicon core wire 5 is inserted into the core wire insert hole 21. In addition, a slit-like gap part 60 extending along a virtual plane P including a central axis C of the core wire insert hole 21 is formed, and the slit-like gap part 60 is a gap part extending from the core wire insert hole 21 to reach an outer surface of the main body of the holder 20. The silicon core wire 5 inserted in the core wire insert hole 21 is fixed by fastening an upper part of the main body of the holder 20 from sides with, for example, a bolt/nut type fixing member 31.

    摘要翻译: 芯线保持器20形成有芯线插入孔21,该芯线插入孔21在主体的上表面上具有开口部22并向下表面侧延伸,硅芯线5插入到芯线插入孔21中 此外,形成有沿着包括芯线插入孔21的中心轴线C的虚拟平面P延伸的狭缝状间隙部60,狭缝状间隙部60是从芯线插入物延伸的间隙部 孔21到达保持器20的主体的外表面。插入芯线插入孔21中的硅芯线5通过例如从侧面紧固保持器20的主体的上部而被固定 螺栓/螺母型固定部件31。

    Method and apparatus for supply of liquid raw material gas
    10.
    发明授权
    Method and apparatus for supply of liquid raw material gas 失效
    供应液体原料气的方法和装置

    公开(公告)号:US5693189A

    公开(公告)日:1997-12-02

    申请号:US508561

    申请日:1995-07-28

    摘要: The mixed gas of a liquid raw material is stably supplied to not only one reactor but also a plurality of reactors as maintained with high purity at a fixed concentration. A method to supply a liquid raw material gas by the steps of storing a liquid raw material 31 in a bubbling tank 13 with maintaining the stored liquid raw material at a controlled temperature, bubbling a carrier gas 41 through the liquid raw material 31 thereby evaporating the liquid raw material and simultaneously generating a mixed gas composed of the carrier gas 41 and the liquid raw material 31, subjecting the mixed gas to a condensation treatment, and returning the liquefied liquid raw material 31 to the bubbling tank 13 and meanwhile supplying the mixed gas escaped from the liquefaction to a reactor(s), which method is characterized in that the condensation treatment of the mixed gas is carried out with the pressure and temperature thereof controlled at fixed levels, thereby the concentration of the mixed gas supplied to a reactor(s) is kept at a fixed level.

    摘要翻译: 液体原料的混合气体不仅稳定地供给至一个反应器,而且以固定浓度保持高纯度的多个反应器。 通过以下步骤供给液体原料气体的方法:将液体原料31储存在发泡罐13中,同时将储存的液体原料保持在受控温度,使载气41通过液体原料31鼓泡,从而蒸发 同时产生由载气41和液体原料31构成的混合气体,使混合气体进行冷凝处理,并将液化液原料31返回到发泡槽13,同时供给混合气体 该方法的特征在于,将混合气体的压缩和温度控制在固定水平,由此将供给到反应器的混合气体的浓度( s)保持在一个固定的水平。