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公开(公告)号：US5363212A
公开(公告)日：1994-11-08
申请号：US882283
申请日：1992-05-13
CPC分类号： H04N1/626 , H04N1/3872 , H04N1/46 , H04N1/622
摘要： A marker dot detecting device for a color image recording apparatus such as a color copying machine, color facsimile, or color printer. The marker dot detecting device includes a marker dot detecting unit for detecting a marker dot by detecting a plane size of binary image data having a preset marker color. Further, the marker dot detecting unit includes a template mask unit having a first template mask in a predetermined first size and a second template mask in a predetermined second size larger than the first size, the second template mask including the first template mask. The template mask unit outputs a marker dot detecting signal when a detected size of the marker dot is larger than that of the first template mask and smaller than that of the second template mask.
摘要翻译： 彩色图像记录装置如彩色复印机，彩色传真机或彩色打印机的标记点检测装置。 标记点检测装置包括：标记点检测单元，用于通过检测具有预设标记颜色的二值图像数据的平面尺寸来检测标记点。 此外，标记点检测单元包括具有预定第一尺寸的第一模板掩模和大于第一尺寸的预定第二尺寸的第二模板掩模的模板掩模单元，第二模板掩模包括第一模板掩模。 当检测到的标记点的尺寸大于第一模板掩模的尺寸并且小于第二模板掩模的尺寸时，模板掩模单元输出标记点检测信号。
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公开(公告)号：US06331281B1
公开(公告)日：2001-12-18
申请号：US09414348
申请日：1999-10-07
申请人： Suehachi Teru , Yasusada Miyano , Noboru Akita , Kenji Otsuka , Takashi Shimada
发明人： Suehachi Teru , Yasusada Miyano , Noboru Akita , Kenji Otsuka , Takashi Shimada
IPC分类号： B01D5358
CPC分类号： B01D53/8634 , Y02A50/2346
摘要： There are disclosed a process for cleaning ammonia-containing exhaust gas which comprises bringing the exhaust gas into contact with an ammonia decomposition catalyst (e.g. nickel, ruthenium) under heating to decompose most of the ammonia into nitrogen and hydrogen, subsequently bringing the resultant mixed gas into contact with an ammonia adsorbent (e.g. synthetic zeolite) for adsorbing undecomposed ammonia, and then heating regenerating the adsorbent, while bringing reproduced exhaust gas containing the ammonia desorbed from the adsorbent into contact under heating, with the ammonia decomposition catalyst or another ammonia decomposition catalyst; and an apparatus for carrying out the process. It is made possible by the process and apparatus to efficiently and completely clean ammonia-containing exhaust gas exhausted from a semiconductor manufacturing process and the like without generating useless byproduct and dispensing with secondary treatment.
摘要翻译： 公开了一种清洗含氨废气的方法，该方法包括在加热下将废气与氨分解催化剂（例如镍，钌）接触以将大部分氨分解成氮和氢，随后将所得混合气体 与用于吸附未分解氨的氨吸附剂（例如合成沸石）接触，然后加热再生吸附剂，同时使含有从吸附剂解吸的氨的再生废气与加热下的氨分解催化剂或另一种氨分解催化剂接触 ; 以及用于执行该过程的装置。 通过该方法和装置可以有效且完全地清洁从半导体制造工艺等排出的含氨废气，而不会产生无用的副产物和分配二次处理。
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公开(公告)号：US5632964A
公开(公告)日：1997-05-27
申请号：US451134
申请日：1995-05-26
申请人： Yasu Ishii , Noboru Akita
发明人： Yasu Ishii , Noboru Akita
IPC分类号： B01D53/46 , B01D53/72 , B01D53/75 , B01D53/86 , B01J20/06 , C01C1/12 , B01D53/58 , B01D53/64 , B01D53/04
CPC分类号： B01D53/46 , B01D53/72 , B01D53/75 , B01D53/8634 , B01D53/8668 , B01D53/8671
摘要： A cleaning method for an exhaust gas containing ammonia, silanes, and organometallic compounds exhausted from a nitride film production step, etc., for producing compound semiconductors.After removing the silanes and the organometallic compounds from the exhaust gas by contacting the exhaust gas with a cleaning agent comprising soda lime having provided thereon a copper(II) salt, the exhaust gas is contacted with an ammonia decomposition catalyst to decompose ammonia into hydrogen and nitrogen, and undecomposed ammonia in the remaining exhaust gas is then removed by a cleaning agent comprising an inorganic carrier having provided thereon a copper(II) salt, or an active carbon having provided thereon copper sulfate.
摘要翻译： 一种用于生产化合物半导体的用于从氮化膜制备步骤等排出的氨，硅烷和有机金属化合物的废气的清洁方法。 通过使废气与包含在其上提供有铜（II）盐的钠钙的清洗剂接触而从排气中除去硅烷和有机金属化合物之后，使废气与氨分解催化剂接触以将氨分解成氢气， 然后通过包含其上提供有铜（II）盐或其上提供有硫酸铜的活性炭的无机载体的清洁剂除去剩余废气中的氮和未分解的氨。
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公开(公告)号：US4910001A
公开(公告)日：1990-03-20
申请号：US238068
申请日：1988-08-30
IPC分类号： B01D53/46
CPC分类号： B01D53/46
摘要： A method for cleaning a gas containing at least one toxic component selected from the group consisting of arsine, phosphine, monosilane, diborane, and hydrogen selenide, which comprises contacting the gas with a cleaning agent containing a molded composition comprising (1) manganese dioxide and (2) cupric oxide, having deposited thereon (3) a silver compound, wherein the weight ratio of cupric oxide to manganese dioxide ranges from 0.2 to 1.2 and the amount of the deposited silver compound ranges from 0.01 to 10.5% by weight based on the cleaning agent. By the cleaning method, the toxic component can be removed from a gas, e.g., air, at high efficiency and at a high rate even in case of sudden leakage of the toxic component out of a bomb.
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公开(公告)号：US4976942A
公开(公告)日：1990-12-11
申请号：US412750
申请日：1989-09-26
申请人： Koichi Kitahara , Takashi Shimada , Keiichi Iwata , Noboru Akita
发明人： Koichi Kitahara , Takashi Shimada , Keiichi Iwata , Noboru Akita
IPC分类号： C01B6/34 , C01B19/00 , C01B19/04 , C01B25/06 , C01B25/08 , C01B33/04 , C01B33/06 , C01B35/04
CPC分类号： C01B35/04 , C01B19/007 , C01B19/04 , C01B25/06 , C01B25/08 , C01B33/046 , C01B33/06 , C01B6/34
摘要： A method for purifying a gaseous hydride, which comprises bringing a crude gaseous hydride into contact with at least one material from nickel arsenides, nickel phosphides, nickel silicides, nickel selenides, or nickel borides to remove oxygen contained in the crude gaseous hydride.
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公开(公告)号：US5597540A
公开(公告)日：1997-01-28
申请号：US308648
申请日：1994-09-19
CPC分类号： B01D53/68
摘要： There is disclosed a process for cleaning a harmful gas which comprises bringing a harmful gaseous halogenide such as chlorine, hydrogen chloride, dichlorosilane, silicon tetrachloride, phosphorus trichloride, chlorine trifluoride, boron trichloride, boron trifluoride, tungsten hexafluoride, silicon tetrafluoride, fluorine, hydrogen fluoride and hydrogen bromide into contact with a cleaning agent comprising zinc oxide, aluminum oxide and an alkali compound to remove the above halogenide. The above process is extremely effective for promptly and efficiently removing the above gaseous halogenide that is contained in the gas discharged from semiconductor manufacturing process.
摘要翻译： 公开了一种清洁有害气体的方法，该方法包括使氯，氯化氢，二氯硅烷，四氯化硅，三氯化磷，三氟化氯，三氯化硼，三氟化硼，六氟化钨，四氟化硅，氟，氢等有害的气态卤化物 氟化物和溴化氢与包含氧化锌，氧化铝和碱性化合物的清洗剂接触以除去上述卤化物。 上述方法对于迅速有效地除去从半导体制造过程中排出的气体中所含有的上述气态卤化物是非常有效的。
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公开(公告)号：US5378444A
公开(公告)日：1995-01-03
申请号：US975698
申请日：1992-11-13
CPC分类号： B01D53/68
摘要： There is disclosed a process for cleaning a harmful gas which comprises bringing a harmful gaseous halogenide such as chlorine, hydrogen chloride, dichlorosilane, silicon tetrachloride, phosphorus trichloride, chlorine trifluoride, boron trichloride, boron trifluoride, tungsten hexafluoride, silicon tetrafluoride, fluorine, hydrogen fluoride and hydrogen bromide into contact with a cleaning agent comprising zinc oxide, aluminum oxide and an alkali compound to remove the above halogenide. The above process is extremely effective for promptly and efficiently removing the above gaseous halogenide that is contained in the gas discharged from semiconductor manufacturing process or leaked suddenly from a gas bomb in an emergency.
摘要翻译： 公开了一种清洁有害气体的方法，该方法包括使氯，氯化氢，二氯硅烷，四氯化硅，三氯化磷，三氟化氯，三氯化硼，三氟化硼，六氟化钨，四氟化硅，氟，氢等有害的气态卤化物 氟化物和溴化氢与包含氧化锌，氧化铝和碱性化合物的清洗剂接触以除去上述卤化物。 上述过程对于迅速有效地除去在半导体制造过程中排出的气体中所含的上述气态卤化物或在紧急情况下突然从气体炸弹泄漏而非常有效。
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公开(公告)号：US4996030A
公开(公告)日：1991-02-26
申请号：US200886
申请日：1988-06-01
CPC分类号： C01B23/00 , B01D53/46 , B01D53/8671 , C01B21/0427 , C01B3/56 , C01B2203/042 , C01B2203/0465 , C01B2210/0043
摘要： A method for cleaning an exhaust gas comprising a base gas and at least one toxic component selected from the group consisting of arsine, phosphine, diborane and hydrogen selenide is disclosed. The method comprises contacting the exhaust gas with a molded cleaning agent having a composition consisting essentially of (1) cupric oxide, (2) manganese dioxide, and (3) at least one metal oxide selected from the group consisting of silicon oxide, aluminum oxide and zinc oxide and having a density of from 0.6 to 1.5 g/ml, said composition having a metal atomic ratio M/(M+Cu+Mn) in the range of from 0.02 to 0.70 and a metal atomic ratio Cu/(Cu+Mn) in the range of from 0.1 to 0.9; wherein Cu represents a number of gram atom of copper; Mn represents a number of gram atom of manganese; and M represents a total number of gram atom of silicon, aluminum and/or zinc, to remove the toxic component from the exhaust gas. The method is effective even at low temperatures below 10.degree. C.
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