公开(公告)号：US20100180152A1

公开(公告)日：2010-07-15

申请号：US12731400

申请日：2010-03-25

申请人： Kazunori KASUGA ,  Osamu Ishibashi

发明人： Kazunori KASUGA ,  Osamu Ishibashi

IPC分类号： G06F12/00 ,  G06F11/07

CPC分类号： G11C11/406 ,  G11C11/40618 ,  G11C11/40622 ,  G11C11/4072 ,  G11C2211/4061 ,  G11C2211/4065

摘要： An information processing device includes a first storage section 2 that includes a plurality of cells to store data; a second storage section 3 that holds refresh intervals and the states of implementation of refresh operations for each of a plurality of the cells; and a control section that controls the refresh operation of each of the cells on the basis of the refresh intervals and the states of implementation of refresh operations held by the second storage section 3. The information processing device controls the refresh operation of each of the cells at refresh intervals set for respective cells.

摘要翻译： 信息处理设备包括：第一存储部分2，其包括用于存储数据的多个单元; 保持刷新间隔的第二存储部3和多个单元中的每一个的刷新动作的执行状态; 以及控制部，其基于所述刷新间隔和由所述第二存储部3保持的刷新动作的执行状态来控制所述单元的刷新动作。所述信息处理装置控制所述单元的刷新动作 在为各个单元设置的刷新间隔。

公开(公告)号：US20100142276A1

公开(公告)日：2010-06-10

申请号：US12623553

申请日：2009-11-23

申请人： Kazunori KASUGA

发明人： Kazunori KASUGA

IPC分类号： G11C16/04 ,  G11C16/26 ,  G06F12/00

CPC分类号： G11C16/26

摘要： A nonvolatile memory includes a memory cell allay including a plurality of memory cells, each of the memory cells capable of storing electric charges nonvolatilly, a first sense amplifier for comparing a voltage produced by one of the selected memory cells to be read out with a first threshold value for distinguishing between a write state and an erase state of the selected memory cell, a second sense amplifier for comparing the voltage produced by one of the selected memory cell with a second threshold value having a greater voltage than the first threshold voltage, and a write unit for rewriting data of the selected memory cell when the first and the second sense amplifiers produce different sense outputs from each other.

摘要翻译： 非易失性存储器包括包含多个存储单元的存储单元，每个存储单元能够非电容地存储电荷;第一读出放大器，用于将要读出的所选择的存储器单元之一产生的电压与第一 用于区分所选存储单元的写入状态和擦除状态的阈值，用于将由所选择的存储单元之一产生的电压与具有比第一阈值电压更大的电压的第二阈值进行比较的第二读出放大器，以及 当第一和第二读出放大器彼此产生不同的感测输出时，用于重写所选存储单元的数据的写入单元。

公开(公告)号：US20100124112A1

公开(公告)日：2010-05-20

申请号：US12603103

申请日：2009-10-21

申请人： Kazunori KASUGA

发明人： Kazunori KASUGA

IPC分类号： G11C16/04 ,  G11C7/06

CPC分类号： G11C11/5628 ,  G11C11/5642 ,  G11C16/04 ,  G11C16/0483 ,  G11C16/349 ,  G11C29/00 ,  G11C2211/5641 ,  G11C2211/5646

摘要： A nonvolatile semiconductor storage device includes a plurality of cells for storing data on a basis of charges stored nonvolatilly, a write unit for writing and erasing data on the cell by injecting or extracting charges into or from the cell, a comparator for comparing the voltage produced by a selected cell to be read out with a threshold, a read unit for outputting read data on the basis of the comparison result by the comparator, and a threshold update unit for updating the threshold of the comparator according to the voltage produced by the selected cell.

摘要翻译： 非易失性半导体存储装置包括：用于基于非电容性存储的电荷存储数据的多个单元;用于通过向单元注入或提取电荷来在单元上写入和擦除单元的数据的写入单元;比较器，用于比较所产生的电压 由选择的单元以阈值读出;读取单元，用于根据比较器的比较结果输出读取数据;以及阈值更新单元，用于根据所选择的电压产生的电压来更新比较器的阈值 细胞。