公开(公告)号：US20090041076A1

公开(公告)日：2009-02-12

申请号：US12232652

申请日：2008-09-22

申请人： Yutaka Inoue ,  Kazunori Saitoh ,  Hiroshi Hamada ,  Masato Hagimoto ,  Susumu Sorimachi

发明人： Yutaka Inoue ,  Kazunori Saitoh ,  Hiroshi Hamada ,  Masato Hagimoto ,  Susumu Sorimachi

IPC分类号： H01S5/00

CPC分类号： H01S5/0224 ,  B82Y20/00 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/34326 ,  H01S2301/14

摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than 50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.

摘要翻译： 光电半导体器件。 光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极 半导体衬底的表面。 支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。 形成第一电极的接合材料和导电层反应形成反应层。 半导体衬底和支撑衬底之间的热膨胀系数差不超过50％。 在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

公开(公告)号：US07463662B2

公开(公告)日：2008-12-09

申请号：US11349172

申请日：2006-02-08

申请人： Kazunori Saitoh ,  Hiroshi Hamada

发明人： Kazunori Saitoh ,  Hiroshi Hamada

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01S5/02212 ,  H01S5/02461 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2081 ,  H01S5/34326 ,  H01L2924/00014 ,  H01L2924/00

摘要： A highly reliable optical semiconductor device insusceptible to degradation in the characteristics thereof. An n-type buffer layer, n-type first cladding layer, active layer, a p-type first layer of the second cladding layer, p-type etch-stop layer, p-type second layer of the second cladding layer, and p-type contact layer are formed an n-type semiconductor substrate. Two lengths of separation grooves are formed in parallel in such a way as to reach the underside of the p-type second layer of the second cladding layer from the top face of the contact layer, and a ridge is formed between the respective separation grooves. The ridge comprises a lower portion thereof, made up of the second layer of the second cladding layer, and a portion of the contact layer, corresponding to the ridge, made up of the contact layer. Side parts of the top face of the portion of the contact layer, corresponding to the ridge, facing the separation grooves, respectively, are turned to tilted faces, respectively, and a barrier metal layer is formed on top of the tilted faces. Portions extending from side faces of the lower portion of the ridge to run across the respective separation grooves are covered with an insulating film. Since the tilted faces are formed at the respective side parts of the top face of the portion of the contact layer, no stepping occurs to the barrier metal layer. Accordingly, Au of an Au layer formed outside of the barrier metal layer is prevented from being diffused into the portion of the contact layer, corresponding to the ridge, made of GaAs, through steeped parts of the barrier metal layer.

摘要翻译： 高度可靠的光学半导体器件，其特性不易降解。 n型缓冲层，n型第一覆层，有源层，第二覆层的p型第一层，p型蚀刻停止层，第二覆层的p型第二层和p 型接触层形成为n型半导体衬底。 从接触层的顶面到达第二包覆层的p型第二层的下侧的方式平行地形成两段分隔槽，在各分离槽之间形成有脊。 脊包括由第二覆层的第二层构成的下部，以及由接触层构成的与脊相对应的接触层的一部分。 接触层的分别对应于脊的部分的顶面的侧面分别转向倾斜面，并且在倾斜面的顶部上形成阻挡金属层。 从脊的下部的侧面延伸穿过相应的分隔槽的部分被绝缘膜覆盖。 由于倾斜面形成在接触层的部分的顶面的各个侧部，所以不会对阻挡金属层发生阶梯。 因此，通过阻挡金属层的浸渍部分，防止形成在阻挡金属层外侧的Au层的Au扩散到对应于由GaAs制成的脊的接触层的部分中。

公开(公告)号：US07443901B2

公开(公告)日：2008-10-28

申请号：US11387986

申请日：2006-03-24

申请人： Yutaka Inoue ,  Kazunori Saitoh ,  Hiroshi Hamada ,  Masato Hagimoto ,  Susumu Sorimachi

发明人： Yutaka Inoue ,  Kazunori Saitoh ,  Hiroshi Hamada ,  Masato Hagimoto ,  Susumu Sorimachi

IPC分类号： H01S3/097

CPC分类号： H01S5/0224 ,  B82Y20/00 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/34326 ,  H01S2301/14

摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.

摘要翻译： 光电半导体器件。 光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极 半导体衬底的表面。 支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。 形成第一电极的接合材料和导电层反应形成反应层。 半导体衬底和支撑衬底之间的热膨胀系数差不超过±50％。 在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

公开(公告)号：US07720127B2

公开(公告)日：2010-05-18

申请号：US12232652

申请日：2008-09-22

申请人： Yutaka Inoue ,  Kazunori Saitoh ,  Hiroshi Hamada ,  Masato Hagimoto ,  Susumu Sorimachi

发明人： Yutaka Inoue ,  Kazunori Saitoh ,  Hiroshi Hamada ,  Masato Hagimoto ,  Susumu Sorimachi

IPC分类号： H01S3/097

CPC分类号： H01S5/0224 ,  B82Y20/00 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/34326 ,  H01S2301/14

摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.

摘要翻译： 光电半导体器件。 光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极 半导体衬底的表面。 支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。 形成第一电极的接合材料和导电层反应形成反应层。 半导体衬底和支撑衬底之间的热膨胀系数差不超过±50％。 在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

公开(公告)号：US07674391B2

公开(公告)日：2010-03-09

申请号：US11700215

申请日：2007-01-31

申请人： Hiroshi Hamada ,  Kazunori Saitoh

发明人： Hiroshi Hamada ,  Kazunori Saitoh

IPC分类号： B29D11/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/209 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34326 ,  H01S2301/185

摘要： It is an objective to control the occurrence of the disorder of a far-field pattern and of an optical axial shift. A manufacturing method of a semiconductor laser device has the step for preparing a semiconductor substrate which has growth of a multi-layer including an active layer, the step for forming a mask over the growth of a multi-layer, and a step for forming a stripe-shaped ridge by dry etching and wet etching. A structure stacking a p-type AlGaInP layer, an etch-stop layer, a p-type Alx=0.7GaInP layer, a p-type Alx=0.6GaInP layer, a p-type GaAs layer, in order, over the active layer is taken in order to make the tailing part created in the dry etching process smaller by wet etching. The tailing part is composed of a p-type Alx=0.7GaInP layer including a high mixed crystal ratio of aluminum. Therefore, the p-type Alx=0.7GaInP layer is etched faster than the p-type Alx=0.6GaInP layer during wet etching, so that the tailing part becomes smaller, the far-field pattern of the semiconductor laser device is not disordered, and the optical axis shift does not occur.

摘要翻译： 目的是控制远场图案和光轴向偏移的发生。 半导体激光器件的制造方法具有制备半导体衬底的步骤，该半导体衬底具有包括有源层的多层的生长，用于在多层生长上形成掩模的步骤，以及用于形成 通过干蚀刻和湿蚀刻形成条形脊。 在有源层上依次堆叠p型AlGaInP层，蚀刻停止层，p型Al x = 0.7GaInP层，p型Al x = 0.6 GaInP层，p型GaAs层的结构 是为了使通过湿法蚀刻在干式蚀刻工艺中产生的拖尾部分变得更小。 尾部由包含铝的高混合比的p型Al x = 0.7GaInP层构成。 因此，在湿蚀刻期间，p型Al x = 0.7GaInP层比p型Al x = 0.6GaInP层蚀刻得更快，使得尾部变小，半导体激光器件的远场图案不会紊乱， 并且不发生光轴偏移。

公开(公告)号：US20070284336A1

公开(公告)日：2007-12-13

申请号：US11700215

申请日：2007-01-31

申请人： Hiroshi Hamada ,  Kazunori Saitoh

发明人： Hiroshi Hamada ,  Kazunori Saitoh

IPC分类号： C03C15/00 ,  C03C25/68

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/209 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34326 ,  H01S2301/185

摘要： It is an objective to control the occurrence of the disorder of a far-field pattern and of an optical axial shift. A manufacturing method of a semiconductor laser device has the step for preparing a semiconductor substrate which has growth of a multi-layer including an active layer, the step for forming a mask over the growth of a multi-layer, and a step for forming a stripe-shaped ridge by dry etching and wet etching. A structure stacking a p-type AlGaInP layer, an etch-stop layer, a p-type Alx=0.7GaInP layer, a p-type Alx=0.6GaInP layer, a p-type GaAs layer, in order, over the active layer is taken in order to make the tailing part created in the dry etching process smaller by wet etching. The tailing part is composed of a p-type Alx=0.7GaInP layer including a high mixed crystal ratio of aluminum. Therefore, the p-type Alx=0.7GaInP layer is etched faster than the p-type Alx=0.6GaInP layer during wet etching, so that the tailing part becomes smaller, the far-field pattern of the semiconductor laser device is not disordered, and the optical axis shift does not occur.

摘要翻译： 目的是控制远场图案和光轴向偏移的发生。 半导体激光器件的制造方法具有制备半导体衬底的步骤，该半导体衬底具有包括有源层的多层的生长，用于在多层生长上形成掩模的步骤，以及用于形成 通过干蚀刻和湿蚀刻形成条形脊。 堆叠p型AlGaInP层，蚀刻停止层，p型Al x = 0.7 GaInP层，p型Al x = 0.6 GaInP的结构 层，p型GaAs层，依次在有源层上，以使得在干式蚀刻工艺中产生的拖尾部分通过湿蚀刻较小。 尾部由包含铝的高混合比的p型Al x = 0.7 GaInP层构成。 因此，在湿蚀刻期间，p型Al x = 0.7 GaInP层比p型Al x = 0.6 GaInP层蚀刻得更快，使得尾部变成 较小的半导体激光器件的远场图案不会发生紊乱，并且不发生光轴偏移。

公开(公告)号：US20060222031A1

公开(公告)日：2006-10-05

申请号：US11387986

申请日：2006-03-24

申请人： Yutaka Inoue ,  Kazunori Saitoh ,  Hiroshi Hamada ,  Masato Hagimoto ,  Susumu Sorimachi

发明人： Yutaka Inoue ,  Kazunori Saitoh ,  Hiroshi Hamada ,  Masato Hagimoto ,  Susumu Sorimachi

IPC分类号： H01S5/00 ,  H01S3/04

CPC分类号： H01S5/0224 ,  B82Y20/00 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/34326 ,  H01S2301/14

摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.

摘要翻译： 光电半导体器件。 光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极 半导体衬底的表面。 支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。 形成第一电极的接合材料和导电层反应形成反应层。 半导体衬底和支撑衬底之间的热膨胀系数差不超过±50％。 在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

公开(公告)号：US20060222030A1

公开(公告)日：2006-10-05

申请号：US11349172

申请日：2006-02-08

申请人： Kazunori Saitoh ,  Hiroshi Hamada

发明人： Kazunori Saitoh ,  Hiroshi Hamada

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01S5/02212 ,  H01S5/02461 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2081 ,  H01S5/34326 ,  H01L2924/00014 ,  H01L2924/00

摘要： A highly reliable optical semiconductor device insusceptible to degradation in the characteristics thereof. An n-type buffer layer, n-type first cladding layer, active layer, a p-type first layer of the second cladding layer, p-type etch-stop layer, p-type second layer of the second cladding layer, and p-type contact layer are formed an n-type semiconductor substrate. Two lengths of separation grooves are formed in parallel in such a way as to reach the underside of the p-type second layer of the second cladding layer from the top face of the contact layer, and a ridge is formed between the respective separation grooves. The ridge comprises a lower portion thereof, made up of the second layer of the second cladding layer, and a portion of the contact layer, corresponding to the ridge, made up of the contact layer. Side parts of the top face of the portion of the contact layer, corresponding to the ridge, facing the separation grooves, respectively, are turned to tilted faces, respectively, and a barrier metal layer is formed on top of the tilted faces. Portions extending from side faces of the lower portion of the ridge to run across the respective separation grooves are covered with an insulating film. Since the tilted faces are formed at the respective side parts of the top face of the portion of the contact layer, no stepping occurs to the barrier metal layer. Accordingly, Au of an Au layer formed outside of the barrier metal layer is prevented from being diffused into the portion of the contact layer, corresponding to the ridge, made of GaAs, through steeped parts of the barrier metal layer.

摘要翻译： 高度可靠的光学半导体器件，其特性不易降解。 n型缓冲层，n型第一覆层，有源层，第二覆层的p型第一层，p型蚀刻停止层，第二覆层的p型第二层和p 型接触层形成为n型半导体衬底。 从接触层的顶面到达第二包覆层的p型第二层的下侧的方式平行地形成两段分隔槽，在各分离槽之间形成有脊。 脊包括由第二覆层的第二层构成的下部，以及由接触层构成的与脊相对应的接触层的一部分。 接触层的分别对应于脊的部分的顶面的侧面分别转向倾斜面，并且在倾斜面的顶部上形成阻挡金属层。 从脊的下部的侧面延伸穿过相应的分隔槽的部分被绝缘膜覆盖。 由于倾斜面形成在接触层的部分的顶面的各个侧部，所以不会对阻挡金属层发生阶梯。 因此，通过阻挡金属层的浸渍部分，防止形成在阻挡金属层外侧的Au层的Au扩散到对应于由GaAs制成的脊的接触层的部分中。

公开(公告)号：US08866352B2

公开(公告)日：2014-10-21

申请号：US13492533

申请日：2012-06-08

申请人： Kazuyoshi Konaya ,  Hiroshi Hamada ,  Mikio Mashino ,  Seiji Kondoh

发明人： Kazuyoshi Konaya ,  Hiroshi Hamada ,  Mikio Mashino ,  Seiji Kondoh

IPC分类号： H02K9/06 ,  H02K11/04

CPC分类号： H02K9/06 ,  H02K11/046

摘要： An alternator for a vehicle is provided which is equipped with a heat dissipator and a cooling air generator. The heat dissipator is disposed in a rectifier to cool rectifying devices. The cooling air generator generates a flow of cooling air to the heat dissipator. The heat dissipator has a plurality of sub-fins formed thereon. Each of the sub-fins is defined by a combination of a protrusion and a recess. The protrusions are formed on one of opposed major surfaces of the heat dissipator, while the recesses are formed on the other major surface, one in coincidence with each of the protrusions in a thickness-wise direction of the heat dissipator. This permits the heat dissipator to be pressed to form the protrusions and the recesses to make the sub-fins simultaneously, thus allowing a heat-dissipating area to be increased to ensure a desired degree of heat capacity thereof.

摘要翻译： 提供一种用于车辆的交流发电机，其配备有散热器和冷却空气发生器。 散热器设置在整流器中以冷却整流装置。 冷却空气发生器产生到散热器的冷却空气流。 散热器具有形成在其上的多个副散热片。 每个子散热片由突起和凹部的组合限定。 突起形成在散热器的相对的主表面之一上，而凹部形成在另一个主表面上，一个与散热器的厚度方向上的每个突起重合。 由此，能够使散热器按压而形成突出部和凹部，同时形成副散热片，从而能够增大散热面积，以确保其所需的热容量。

公开(公告)号：US08602656B2

公开(公告)日：2013-12-10

申请号：US13174187

申请日：2011-06-30

申请人： Mikio Mashino ,  Hiroshi Hamada

发明人： Mikio Mashino ,  Hiroshi Hamada

IPC分类号： F16C19/06 ,  F16F1/34

CPC分类号： F16C25/083

摘要： An alternator has front and rear bearings, supported by front and rear frames, to rotatably support a shaft of a rotor extending along axial direction. A washer is located between the rear frame and the rear bearing to apply pressing force to the rear bearing slightly movable along axial direction. The washer has a ring-shaped base portion concentrically located with the rear bearing, slanting portions extending from the base portion toward outside of radial direction such that two adjacent slanting portions arranged as each pair along circumferential direction are inclined to different sides of axial direction, and flattened portions extending from respective slanting portions toward outside and being parallel to the base portion. Flattened portions shifted to front side are in contact with the rear bearing, and flattened portions shifted to rear side are in contact with the rear frame.

摘要翻译： 交流发电机具有由前框架和后框架支撑的前后轴承，以可旋转地支撑沿着轴向方向延伸的转子的轴。 垫圈位于后框架和后轴承之间，对后轴承施加压力，该轴承可沿轴向稍微移动。 垫圈具有与后轴承同心地定位的环状基部，从基部向径向外侧延伸的倾斜部，使得沿圆周方向配置成每对的两个相邻的倾斜部向轴向的不同侧倾斜， 以及从各倾斜部向外侧延伸并与基部平行的扁平部。 移动到前侧的平坦部分与后轴承接触，并且移动到后侧的扁平部分与后框架接触。