公开(公告)号：US20100044864A1

公开(公告)日：2010-02-25

申请号：US12481234

申请日：2009-06-09

申请人： Kazuyoshi MAEKAWA ,  Kenichi Mori ,  Kazuyuki Omori ,  Yuki Koyama

发明人： Kazuyoshi MAEKAWA ,  Kenichi Mori ,  Kazuyuki Omori ,  Yuki Koyama

IPC分类号： H01L23/48 ,  H01L21/3205

CPC分类号： H01L21/2855 ,  H01L21/76805 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76883 ,  H01L21/76888 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention aims at providing a method of manufacturing a semiconductor device capable of suppressing metal diffusion from the upper face of wiring.In the present invention, a copper seed film containing copper and a first metal element is formed in a groove formed in a first interlayer film over a semiconductor substrate. After that, a copper plating treatment is performed. After that, a first heat treatment is performed in a first atmosphere in which the copper layer is not oxidized. Then, an excess metal layer of copper alloy is removed and copper alloy wiring is formed in the groove. After that, a second heat treatment is performed in a second atmosphere containing oxygen to form an oxide layer being the oxide of the first metal element over the surface of the copper alloy wiring.

摘要翻译： 本发明的目的在于提供一种能够抑制从布线的上表面的金属扩散的半导体器件的制造方法。 在本发明中，在半导体衬底上形成在第一层间膜中的沟槽中形成含有铜和第一金属元素的铜籽晶膜。 之后，进行镀铜处理。 之后，在铜层未被氧化的第一气氛中进行第一热处理。 然后，除去铜合金的过量金属层，并在槽内形成铜合金布线。 之后，在包含氧的第二气氛中进行第二热处理，以在铜合金布线的表面上形成作为第一金属元件的氧化物的氧化物层。

公开(公告)号：US08125085B2

公开(公告)日：2012-02-28

申请号：US12481234

申请日：2009-06-09

申请人： Kazuyoshi Maekawa ,  Kenichi Mori ,  Kazuyuki Omori ,  Yuki Koyama

发明人： Kazuyoshi Maekawa ,  Kenichi Mori ,  Kazuyuki Omori ,  Yuki Koyama

IPC分类号： H01L23/48 ,  H01L29/80 ,  H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/2855 ,  H01L21/76805 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76883 ,  H01L21/76888 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes an interlayer film formed over a semiconductor substrate. A groove is formed in the interlayer film. A wiring formed in the groove is a copper alloy including copper and a metal element. An oxide layer of the metal element is formed over the surface of the wiring. The oxide layer is formed in a first region along a grain boundary of a copper crystal and a second region surrounded by the grain boundary, over the surface of the wiring. The oxide layer formed in the first region has a thickness greater than that of the oxide layer formed in the second region.

摘要翻译： 半导体器件包括形成在半导体衬底上的层间膜。 在中间膜中形成凹槽。 形成在槽中的布线是包括铜和金属元素的铜合金。 金属元件的氧化物层形成在布线的表面上。 在布线的表面上，沿着铜晶的晶界的第一区域和由晶界包围的第二区域形成氧化物层。 形成在第一区域中的氧化物层的厚度大于在第二区域中形成的氧化物层的厚度。