公开(公告)号：US20060203379A1

公开(公告)日：2006-09-14

申请号：US11337659

申请日：2006-01-24

申请人： Kei Hirata ,  Takahiko Machita ,  Kiyoshi Noguchi

发明人： Kei Hirata ,  Takahiko Machita ,  Kiyoshi Noguchi

IPC分类号： G11B5/127

CPC分类号： G11B5/1278

摘要： A perpendicular magnetic recording element includes a recording magnetic pole film and a write shield film. The recording magnetic pole film has a yoke portion and a main magnetic pole for perpendicular recording. The main magnetic pole projects from a front end of the yoke portion to have an end on a medium-facing surface. The write shield film faces the recording magnetic pole film and has a height equal to or smaller than that of the recording magnetic pole film, as measured rearward from the medium-facing surface.

摘要翻译： 垂直磁记录元件包括记录磁极膜和写保护膜。 记录磁极膜具有用于垂直记录的磁轭部分和主磁极。 主磁极从磁轭部的前端突出，以在中间面的表面上具有一端。 写入屏蔽膜面向记录磁极膜，并且具有与记录磁极膜相同或更小的高度，从中间面向后测量。

公开(公告)号：US07558027B2

公开(公告)日：2009-07-07

申请号：US11411107

申请日：2006-04-26

申请人： Kei Hirata ,  Takahiko Machita ,  Koji Shimazawa ,  Kiyoshi Noguchi

发明人： Kei Hirata ,  Takahiko Machita ,  Koji Shimazawa ,  Kiyoshi Noguchi

IPC分类号： G11B5/127

CPC分类号： G11B5/3912 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996

摘要： A magnetic field sensor comprises: a magnetic field detecting element that detects magnitude of an external magnetic field based on electric resistance of the magnetic field detecting element to sense current, the electric resistance being varied in accordance with the external magnetic field; an upper shield layer that is formed to cover the magnetic field detecting element; and a protective layer that is formed above the upper shield layer with respect to a direction of stacking. The upper shield layer includes a first portion at least part of which covers a top surface of the magnetic field detecting element, and a second portion that covers the first portion, and, the first portion has a larger absolute value of magnetostriction than the second portion.

摘要翻译： 磁场传感器包括：磁场检测元件，其基于磁场检测元件的电阻来检测外部磁场的大小以感测电流，电阻根据外部磁场而变化; 形成为覆盖所述磁场检测元件的上屏蔽层; 以及相对于堆叠方向形成在上屏蔽层上方的保护层。 上屏蔽层包括其至少一部分覆盖磁场检测元件的顶表面的第一部分和覆盖第一部分的第二部分，并且第一部分具有比第二部分更大的磁致伸缩绝对值 。

公开(公告)号：US07542233B2

公开(公告)日：2009-06-02

申请号：US11337659

申请日：2006-01-24

申请人： Kei Hirata ,  Takahiko Machita ,  Kiyoshi Noguchi

发明人： Kei Hirata ,  Takahiko Machita ,  Kiyoshi Noguchi

IPC分类号： G11B5/17

CPC分类号： G11B5/1278

摘要： A perpendicular magnetic recording element includes a recording magnetic pole film and a write shield film. The recording magnetic pole film has a yoke portion and a main magnetic pole for perpendicular recording. The main magnetic pole projects from a front end of the yoke portion to have an end on a medium-facing surface. The write shield film faces the recording magnetic pole film and has a height equal to or smaller than that of the recording magnetic pole film, as measured rearward from the medium-facing surface.

摘要翻译： 垂直磁记录元件包括记录磁极膜和写保护膜。 记录磁极膜具有用于垂直记录的磁轭部分和主磁极。 主磁极从磁轭部的前端突出，以在中间面的表面上具有一端。 写入屏蔽膜面向记录磁极膜，并且具有与记录磁极膜相同或更小的高度，从中间面向后测量。

公开(公告)号：US20060262457A1

公开(公告)日：2006-11-23

申请号：US11411107

申请日：2006-04-26

申请人： Kei Hirata ,  Takahiko Machita ,  Koji Shimazawa ,  Kiyoshi Noguchi

发明人： Kei Hirata ,  Takahiko Machita ,  Koji Shimazawa ,  Kiyoshi Noguchi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3912 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996

摘要： A magnetic field sensor comprises: a magnetic field detecting element that detects magnitude of an external magnetic field based on electric resistance of the magnetic field detecting element to sense current, the electric resistance being varied in accordance with the external magnetic field; an upper shield layer that is formed to cover the magnetic field detecting element; and a protective layer that is formed above the upper shield layer with respect to a direction of stacking. The upper shield layer includes a first portion at least part of which covers a top surface of the magnetic field detecting element, and a second portion that covers the first portion, and, the first portion has a larger absolute value of magnetostriction than the second portion.

公开(公告)号：US20090273864A1

公开(公告)日：2009-11-05

申请号：US12005274

申请日：2007-12-27

申请人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa ,  Daisuke Miyauchi

发明人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa ,  Daisuke Miyauchi

IPC分类号： G11B5/33 ,  B44C1/22

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3912 ,  G11B5/3932 ,  H01L43/12

摘要： A magnetoresistive element includes a first and a second shield, and an MR stack disposed between the shields. The MR stack includes a first and a second ferromagnetic layer, and a nonmagnetic spacer layer disposed between the ferromagnetic layers. The first and second ferromagnetic layers have magnetizations that are in directions antiparallel to each other when no external magnetic field is applied to the layers, and that change directions in response to an external magnetic field. An insulating layer is formed to touch a rear end face of the MR stack and the first shield, and a bias magnetic field applying layer is formed above the insulating layer with a buffer layer disposed in between. The bias magnetic field applying layer includes a hard magnetic layer and a high saturation magnetization layer. The high saturation magnetization layer is located between the rear end face and the hard magnetic layer, but not located between the first shield and the hard magnetic layer.

摘要翻译： 磁阻元件包括第一和第二屏蔽以及设置在屏蔽之间的MR堆叠。 MR堆叠包括第一和第二铁磁层，以及设置在铁磁层之间的非磁性间隔层。 当没有外部磁场施加到层上时，第一和第二铁磁层具有在彼此反平行的方向上的磁化，并且响应于外部磁场改变方向。 形成绝缘层以接触MR堆叠和第一屏蔽的后端面，并且在绝缘层上形成有偏置磁场施加层，其间设置有缓冲层。 偏置磁场施加层包括硬磁性层和高饱和磁化层。 高饱和磁化层位于后端面和硬磁性层之间，但不位于第一屏蔽和硬磁性层之间。

公开(公告)号：US07583478B2

公开(公告)日：2009-09-01

申请号：US11482090

申请日：2006-07-07

申请人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa

发明人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/3912 ,  G11B2005/3996

摘要： A thin-film magnetic head comprises: a magnetoresistive element: first and second read shield layers disposed to sandwich the magnetoresistive element; and bias field applying layers for applying a bias magnetic field to the magnetoresistive element. Each of the first and second read shield layers has: a first end face located in a medium facing surface; a second end face opposite to the first end face; a first width changing portion that continuously decreases in width as the distance from the first end face decreases; and a second width changing portion that continuously decreases in width as the distance from the second end face decreases.

摘要翻译： 薄膜磁头包括：磁阻元件：设置成夹着磁阻元件的第一和第二读屏蔽层; 以及用于向磁阻元件施加偏置磁场的偏置场施加层。 第一和第二读取屏蔽层中的每一个具有：位于介质面对表面中的第一端面; 与第一端面相对的第二端面; 第一宽度改变部分，随着距离第一端面的距离减小，其宽度连续减小; 以及随着与第二端面的距离的减小，宽度连续减小的第二宽度改变部分。

公开(公告)号：US07764471B2

公开(公告)日：2010-07-27

申请号：US11685021

申请日：2007-03-12

申请人： Tomohito Mizuno ,  Takahiko Machita ,  Kei Hirata ,  Yoshihiro Tsuchiya ,  Shinji Hara

发明人： Tomohito Mizuno ,  Takahiko Machita ,  Kei Hirata ,  Yoshihiro Tsuchiya ,  Shinji Hara

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1121

摘要： A magnetoresistance effect element (MR element) for use in a thin-film magnetic head has a buffer layer, an antiferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer that are successively stacked. A sense current flows in a direction perpendicular to layer surfaces via a lower shield layer and an upper shield layer. The pinned layer comprises an outer layer having a fixed magnetization direction, a nonmagnetic intermediate layer, and an inner layer in the form of a ferromagnetic layer. The spacer layer comprises a first nonmagnetic metal layer, a semiconductor layer made of ZnO, and a second nonmagnetic metal layer. The inner layer or the outer layer includes a diffusion blocking layer made of an oxide of an element whose electronegativity is equal to or smaller than Zn, e.g., ZnO, TaO, ZrO, MgO, TiO, or HfO, or made of RuO.

摘要翻译： 用于薄膜磁头的磁阻效应元件（MR元件）具有依次层叠的缓冲层，反铁磁层，钉扎层，间隔层，自由层和盖层。 感测电流通过下屏蔽层和上屏蔽层在垂直于层表面的方向上流动。 被钉扎层包括具有固定磁化方向的外层，非磁性中间层和呈铁磁层形式的内层。 间隔层包括第一非磁性金属层，由ZnO制成的半导体层和第二非磁性金属层。 内层或外层包括由电负性等于或小于Zn的元素的氧化物（例如ZnO，TaO，ZrO，MgO，TiO或HfO）或由RuO制成的扩散阻挡层。

公开(公告)号：US20070109691A1

公开(公告)日：2007-05-17

申请号：US11482090

申请日：2006-07-07

申请人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa

发明人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/3912 ,  G11B2005/3996

摘要： A thin-film magnetic head comprises: a magnetoresistive element: first and second read shield layers disposed to sandwich the magnetoresistive element; and bias field applying layers for applying a bias magnetic field to the magnetoresistive element. Each of the first and second read shield layers has: a first end face located in a medium facing surface; a second end face opposite to the first end face; a first width changing portion that continuously decreases in width as the distance from the first end face decreases; and a second width changing portion that continuously decreases in width as the distance from the second end face decreases.

摘要翻译： 薄膜磁头包括：磁阻元件：设置成夹着磁阻元件的第一和第二读屏蔽层; 以及用于向磁阻元件施加偏置磁场的偏置场施加层。 第一和第二读取屏蔽层中的每一个具有：位于介质面对表面中的第一端面; 与第一端面相对的第二端面; 第一宽度改变部分，随着距离第一端面的距离减小，其宽度连续减小; 以及随着与第二端面的距离的减小，宽度连续减小的第二宽度改变部分。

公开(公告)号：US07843668B2

公开(公告)日：2010-11-30

申请号：US12005274

申请日：2007-12-27

申请人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa ,  Daisuke Miyauchi

发明人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa ,  Daisuke Miyauchi

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3912 ,  G11B5/3932 ,  H01L43/12

摘要： A magnetoresistive element includes a first and a second shield, and an MR stack disposed between the shields. The MR stack includes a first and a second ferromagnetic layer, and a nonmagnetic spacer layer disposed between the ferromagnetic layers. The first and second ferromagnetic layers have magnetizations that are in directions antiparallel to each other when no external magnetic field is applied to the layers, and that change directions in response to an external magnetic field. An insulating layer is formed to touch a rear end face of the MR stack and the first shield, and a bias magnetic field applying layer is formed above the insulating layer with a buffer layer disposed in between. The bias magnetic field applying layer includes a hard magnetic layer and a high saturation magnetization layer. The high saturation magnetization layer is located between the rear end face and the hard magnetic layer, but not located between the first shield and the hard magnetic layer.

摘要翻译： 磁阻元件包括第一和第二屏蔽以及设置在屏蔽之间的MR堆叠。 MR堆叠包括第一和第二铁磁层，以及设置在铁磁层之间的非磁性间隔层。 当没有外部磁场施加到层上时，第一和第二铁磁层具有在彼此反平行的方向上的磁化，并且响应于外部磁场改变方向。 形成绝缘层以接触MR堆叠和第一屏蔽的后端面，并且在绝缘层上形成有偏置磁场施加层，其间设置有缓冲层。 偏置磁场施加层包括硬磁性层和高饱和磁化层。 高饱和磁化层位于后端面和硬磁性层之间，但不位于第一屏蔽和硬磁性层之间。

公开(公告)号：US07679861B2

公开(公告)日：2010-03-16

申请号：US11591504

申请日：2006-11-02

申请人： Kei Hirata ,  Kiyoshi Noguchi

发明人： Kei Hirata ,  Kiyoshi Noguchi

IPC分类号： G11B5/31

CPC分类号： G11B5/3116 ,  G11B5/1278

摘要： A pole layer incorporates a track width defining portion and a wide portion. The track width defining portion has an end face that is located in the medium facing surface and that defines the track width. The maximum width of the wide portion is greater than the track width and equal to or greater than the length of the wide portion taken in the direction orthogonal to the medium facing surface. When the coil is generating no magnetic field, in the end face of the track width defining portion, there exist first and second regions in which the directions of components of magnetization orthogonal to the medium facing surface are opposite.

摘要翻译： 极层包括轨道宽度限定部分和宽部分。 轨道宽度限定部分具有位于介质面向表面中并限定轨道宽度的端面。 宽部分的最大宽度大于轨道宽度，并且等于或大于在与面向介质的表面正交的方向上拍摄的宽部分的长度。 当线圈不产生磁场时，在轨道宽度限定部分的端面中，存在第一和第二区域，其中与面向介质的表面正交的磁化分量的方向相反。