公开(公告)号：US07677955B2

公开(公告)日：2010-03-16

申请号：US12243483

申请日：2008-10-01

申请人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Shigehiko Aoki ,  Hirotoshi Hoshikawa ,  Yoshikazu Kobayashi ,  Seiji Harada ,  Setsuo Yamamoto

发明人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Shigehiko Aoki ,  Hirotoshi Hoshikawa ,  Yoshikazu Kobayashi ,  Seiji Harada ,  Setsuo Yamamoto

IPC分类号： B24B49/00

CPC分类号： B24D7/18 ,  B24B1/00 ,  B24B7/228

摘要： A grinding method for a wafer having a plurality of devices on the front side, wherein the back side of the wafer is ground by a grinding wheel to suppress the motion of heavy metal in the wafer by a gettering effect and also to maintain the die strength of each device at about 1,000 MPa or more. The grinding wheel is composed of a frame and an abrasive member fixed to the free end of the frame. The abrasive member is produced by fixing diamond abrasive grains having a grain size of less than or equal to 1 μm with a vitrified bond. A protective member is attached to the front side of the wafer and the wafer is held on a chuck table in the condition where the protective member is in contact with the chuck table. The grinding wheel is rotated as rotating the chuck table to thereby grind the back side of the wafer by means of the abrasive member so that the average surface roughness of the back side of the wafer becomes less than or equal to 0.003 μm and the thickness of a strain layer remaining on the back side of the wafer becomes 0.05 μm.

摘要翻译： 一种用于在前侧具有多个器件的晶片的研磨方法，其中晶片的背面通过砂轮研磨，以通过吸气效应抑制晶片中重金属的运动，并且还保持模具强度 的每个装置在约1000MPa或更大。 砂轮由固定在框架自由端的框架和研磨件构成。 研磨构件通过用玻璃化粘合剂固定具有小于或等于1μm的晶粒尺寸的金刚石磨粒来制造。 在保护构件与卡盘台接触的状态下，将保护构件安装在晶片的前侧，并将晶片保持在卡盘台上。 砂轮沿着卡盘台转动而旋转，从而通过研磨部件磨削晶片的背面，使得晶片背面的平均表面粗糙度小于或等于0.003μm，厚度为 残留在晶片背面的应变层为0.05μm。

公开(公告)号：US20090098808A1

公开(公告)日：2009-04-16

申请号：US12243483

申请日：2008-10-01

申请人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Shigehiko Aoki ,  Hirotoshi Hoshikawa ,  Yoshikazu Kobayashi ,  Seiji Harada ,  Setsuo Yamamoto

发明人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Shigehiko Aoki ,  Hirotoshi Hoshikawa ,  Yoshikazu Kobayashi ,  Seiji Harada ,  Setsuo Yamamoto

IPC分类号： B24B1/00 ,  B24B7/00

CPC分类号： B24D7/18 ,  B24B1/00 ,  B24B7/228

摘要： A grinding method for a wafer having a plurality of devices on the front side, wherein the back side of the wafer is ground by a grinding wheel to suppress the motion of heavy metal in the wafer by a gettering effect and also to maintain the die strength of each device at about 1,000 MPa or more. The grinding wheel is composed of a frame and an abrasive member fixed to the free end of the frame. The abrasive member is produced by fixing diamond abrasive grains having a grain size of less than or equal to 1 μm with a vitrified bond. A protective member is attached to the front side of the wafer and the wafer is held on a chuck table in the condition where the protective member is in contact with the chuck table. The grinding wheel is rotated as rotating the chuck table to thereby grind the back side of the wafer by means of the abrasive member so that the average surface roughness of the back side of the wafer becomes less than or equal to 0.003 μm and the thickness of a strain layer remaining on the back side of the wafer becomes 0.05 μm.

摘要翻译： 一种用于在前侧具有多个器件的晶片的研磨方法，其中晶片的背面通过砂轮研磨，以通过吸气效应抑制晶片中重金属的运动，并且还保持模具强度 的每个装置在约1000MPa或更大。 砂轮由固定在框架自由端的框架和研磨件构成。 研磨部件通过将具有小于或等于1μm的粒度的金刚石磨粒与玻璃化粘合固定而制成。 在保护构件与卡盘台接触的状态下，将保护构件安装在晶片的前侧，并将晶片保持在卡盘台上。 砂轮以旋转卡盘台的方式旋转，从而通过研磨部件磨削晶片的背面，使得晶片背面的平均表面粗糙度小于或等于0.003μm，厚度为 残留在晶片背面的应变层为0.05μm。

公开(公告)号：US08025556B2

公开(公告)日：2011-09-27

申请号：US12349770

申请日：2009-01-07

申请人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Setsuo Yamamoto

发明人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Setsuo Yamamoto

IPC分类号： B24B1/00

CPC分类号： B24B37/042 ,  B24B27/0076

摘要： A method of grinding a wafer, including: a wafer holding step for holding a wafer on a conical holding surface of a chuck table having the holding surface; a rough grinding step for performing rough grinding of the wafer held on the holding surface of the chuck table by positioning a grinding surface of a rough grinding wheel at a predetermined inclination angle relative to the holding surface of said chuck table, and rotating the rough grinding wheel; and a finish grinding step for performing finish grinding of the wafer by positioning a grinding surface of a finish grinding wheel in parallel to the holding surface of the chuck table, and rotating the finish grinding wheel in a grinding region of the grinding wheel in a direction toward the vertex of the contact angle between the grinding surface of the finish grinding wheel and the surface to be ground of the wafer.

摘要翻译： 一种研磨晶片的方法，包括：晶片保持步骤，用于将晶片保持在具有保持表面的卡盘台的锥形保持表面上; 通过将粗磨轮的研磨面相对于所述夹盘的保持面定位成预定的倾斜角度，对保持在卡盘台的保持面上的晶片进行粗磨，粗磨加工， 轮; 以及精磨步骤，通过将精磨轮的研磨面与夹盘的保持面平行地定位，使精磨砂轮在砂轮的研磨区域中沿着方向 朝向精磨轮的磨削表面与待研磨的表面之间的接触角的顶点。

公开(公告)号：US20090186562A1

公开(公告)日：2009-07-23

申请号：US12349770

申请日：2009-01-07

申请人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Setsuo Yamamoto

发明人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Setsuo Yamamoto

IPC分类号： B24B1/00

CPC分类号： B24B37/042 ,  B24B27/0076

摘要： A method of grinding a wafer, including: a wafer holding step for holding a wafer on a conical holding surface of a chuck table having the holding surface; a rough grinding step for performing rough grinding of the wafer held on the holding surface of the chuck table by positioning a grinding surface of a rough grinding wheel at a predetermined inclination angle relative to the holding surface of said chuck table, and rotating the rough grinding wheel; and a finish grinding step for performing finish grinding of the wafer by positioning a grinding surface of a finish grinding wheel in parallel to the holding surface of the chuck table, and rotating the finish grinding wheel in a grinding region of the grinding wheel in a direction toward the vertex of the contact angle between the grinding surface of the finish grinding wheel and the surface to be ground of the wafer.

摘要翻译： 一种研磨晶片的方法，包括：晶片保持步骤，用于将晶片保持在具有保持表面的卡盘台的锥形保持表面上; 通过将粗磨轮的研磨面相对于所述夹盘的保持面定位成预定的倾斜角度，对保持在卡盘台的保持面上的晶片进行粗磨，粗磨加工， 轮; 以及精磨步骤，通过将精磨轮的研磨面与夹盘的保持面平行地定位，使精磨砂轮在砂轮的研磨区域中沿着方向 朝向精磨轮的磨削表面与待研磨的表面之间的接触角的顶点。

公开(公告)号：US20120100694A1

公开(公告)日：2012-04-26

申请号：US13277874

申请日：2011-10-20

申请人： Keiichi Kajiyama ,  Takatoshi Masuda

发明人： Keiichi Kajiyama ,  Takatoshi Masuda

IPC分类号： H01L21/78

CPC分类号： H01L21/78

摘要： A wafer is divided into individual devices along division lines formed on the front side of the wafer. The devices are respectively formed in a plurality of regions partitioned by the division lines. A protective member is provided on the front of the wafer, and the back of the wafer is ground to a predetermined thickness. A laser beam is applied to the wafer from the back side of the wafer along the division lines with the focal point of the laser beam set inside the wafer at a position corresponding to each division line, thereby forming a plurality of modified layers inside the wafer along the division lines. The wafer is divided along the modified layers into the individual devices, and the back side of the wafer is ground to remove the modified layers and reduce the thickness of each device to the finished thickness.

摘要翻译： 沿着形成在晶片的前侧上的分割线将晶片分成单个器件。 这些装置分别形成在由分割线分割的多个区域中。 在晶片的正面设有保护构件，将晶片的背面研磨成规定的厚度。 激光束沿着分割线从晶片的背面施加到晶片，其中激光束的焦点设置在晶片内部的对应于每个分割线的位置处，从而在晶片内部形成多个改性层 沿分界线。 将晶片沿着改性层划分成各个器件，并且研磨晶片的背面以除去改性层并将每个器件的厚度减小到成品厚度。

公开(公告)号：US07858530B2

公开(公告)日：2010-12-28

申请号：US11728936

申请日：2007-03-27

申请人： Keiichi Kajiyama ,  Takatoshi Masuda

发明人： Keiichi Kajiyama ,  Takatoshi Masuda

IPC分类号： H01L21/302 ,  C03C25/68

CPC分类号： H01L21/78 ,  H01L21/3043 ,  H01L21/67132 ,  H01L21/6836 ,  H01L2221/68327

摘要： A processing method for a wafer includes: preparing a wafer which has a device region having plural devices formed on a surface of the wafer; and a peripheral reinforcing portion which is integrally formed around the device region and has a projection projecting outwardly on a rear surface of the wafer. The processing method further includes: removing at least the projection of the peripheral reinforcing portion of the wafer; and transferring the wafer after the removing. In the removing, while the wafer is held on a holding table such that the rear surface of the wafer is exposed and the surface of the wafer closely contacts the holding table, at least the projection of the peripheral reinforcing portion is removed. After the removing of at least the projection, while the wafer is held on the holding table, a holding tape is applied to the rear surface of the wafer and the holding tape is supported by a frame. In the transferring, the wafer having the holding tape applied thereon is separated together with the frame from the holding table and is transferred together with the frame.

摘要翻译： 晶片的处理方法包括：准备具有形成在晶片表面上的具有多个器件的器件区域的晶片; 以及周边加强部，其围绕所述器件区域一体地形成并且具有在所述晶片的后表面上向外突出的突起。 该处理方法还包括：至少去除晶片的外围加强部分的突起; 并且在移除之后转移晶片。 在移除时，当晶片被保持在保持台上，使得晶片的后表面暴露并且晶片的表面紧密地接触保持台时，至少外围加强部分的突起被去除。 在移除至少突起之后，当晶片保持在保持台上时，将保持带施加到晶片的后表面，并且保持带由框架支撑。 在转印中，具有施加在其上的保持带的晶片与框架一起从保持台分离，并与框架一起传送。

公开(公告)号：US08415232B2

公开(公告)日：2013-04-09

申请号：US13277874

申请日：2011-10-20

申请人： Keiichi Kajiyama ,  Takatoshi Masuda

发明人： Keiichi Kajiyama ,  Takatoshi Masuda

IPC分类号： H01L21/301 ,  H01L21/46 ,  H01L21/78

CPC分类号： H01L21/78

摘要： A wafer is divided into individual devices along division lines formed on the front side of the wafer. The devices are respectively formed in a plurality of regions partitioned by the division lines. A protective member is provided on the front of the wafer, and the back of the wafer is ground to a predetermined thickness. A laser beam is applied to the wafer from the back side of the wafer along the division lines with the focal point of the laser beam set inside the wafer at a position corresponding to each division line, thereby forming a plurality of modified layers inside the wafer along the division lines. The wafer is divided along the modified layers into the individual devices, and the back side of the wafer is ground to remove the modified layers and reduce the thickness of each device to the finished thickness.

摘要翻译： 沿着形成在晶片的前侧上的分割线将晶片分成单个器件。 这些装置分别形成在由分割线分割的多个区域中。 在晶片的正面设有保护构件，将晶片的背面研磨成规定的厚度。 激光束沿着分割线从晶片的背面施加到晶片，其中激光束的焦点设置在晶片内部的对应于每个分割线的位置处，从而在晶片内部形成多个改性层 沿分界线。 将晶片沿着改性层划分成各个器件，并且研磨晶片的背面以除去改性层并将每个器件的厚度减小到成品厚度。

公开(公告)号：US20070231929A1

公开(公告)日：2007-10-04

申请号：US11728931

申请日：2007-03-27

申请人： Keiichi Kajiyama ,  Takatoshi Masuda

发明人： Keiichi Kajiyama ,  Takatoshi Masuda

IPC分类号： H01L21/00

CPC分类号： H01L21/67132 ,  H01L21/67092 ,  H01L21/68707

摘要： A processing method for a wafer includes: preparing a wafer which has a device region having plural devices formed on a surface of the wafer; and a peripheral reinforcing portion which is integrally formed around the device region and has a projection projecting outwardly on a rear surface of the wafer. The processing method further includes: holding the wafer on a holding surface of a rotatable holding table such that the rear surface of the wafer is exposed and the surface of the wafer closely contacts the holding table. The processing method further includes: thinning the peripheral reinforcing portion by cutting and removing at least the projection of the peripheral reinforcing portion of the wafer by using a cutting tool having a rotational shaft parallel to the holding surface, while rotating the wafer by rotating the holding table after the holding of the wafer. The peripheral reinforcing portion is thinned so as to have a thickness equal to or thinner than that of the device region by the thinning.

摘要翻译： 晶片的处理方法包括：准备具有形成在晶片表面上的具有多个器件的器件区域的晶片; 以及周边加强部，其围绕所述器件区域一体地形成并且具有在所述晶片的后表面上向外突出的突起。 处理方法还包括：将晶片保持在可旋转保持台的保持表面上，使得晶片的后表面暴露并且晶片的表面紧密地接触保持台。 该处理方法还包括：通过使用具有与保持表面平行的旋转轴的切割工具，至少切割和移除晶片的周边加强部分的突起来减薄外围加强部分，同时通过旋转保持 表后保持晶圆。 外周加强部通过变薄而变薄，使得其厚度等于或小于器件区域的厚度。

公开(公告)号：US07718511B2

公开(公告)日：2010-05-18

申请号：US11728931

申请日：2007-03-27

申请人： Keiichi Kajiyama ,  Takatoshi Masuda

发明人： Keiichi Kajiyama ,  Takatoshi Masuda

IPC分类号： H01L21/00

CPC分类号： H01L21/67132 ,  H01L21/67092 ,  H01L21/68707

摘要： A processing method for a wafer includes: preparing a wafer which has a device region having plural devices formed on a surface of the wafer; and a peripheral reinforcing portion which is integrally formed around the device region and has a projection projecting outwardly on a rear surface of the wafer. The processing method further includes: holding the wafer on a holding surface of a rotatable holding table such that the rear surface of the wafer is exposed and the surface of the wafer closely contacts the holding table. The processing method further includes: thinning the peripheral reinforcing portion by cutting and removing at least the projection of the peripheral reinforcing portion of the wafer by using a cutting tool having a rotational shaft parallel to the holding surface, while rotating the wafer by rotating the holding table after the holding of the wafer. The peripheral reinforcing portion is thinned so as to have a thickness equal to or thinner than that of the device region by the thinning.

摘要翻译： 晶片的处理方法包括：准备具有形成在晶片表面上的具有多个器件的器件区域的晶片; 以及周边加强部，其围绕所述器件区域一体地形成并且具有在所述晶片的后表面上向外突出的突起。 处理方法还包括：将晶片保持在可旋转保持台的保持表面上，使得晶片的后表面暴露并且晶片的表面紧密地接触保持台。 该处理方法还包括：通过使用具有与保持表面平行的旋转轴的切割工具，至少切割和移除晶片的周边加强部分的突起来减薄外围加强部分，同时通过旋转保持 表后保持晶圆。 外周加强部通过变薄而变薄，使得其厚度等于或小于器件区域的厚度。

公开(公告)号：US20070227655A1

公开(公告)日：2007-10-04

申请号：US11728936

申请日：2007-03-27

申请人： Keiichi Kajiyama ,  Takatoshi Masuda

发明人： Keiichi Kajiyama ,  Takatoshi Masuda

IPC分类号： H01L21/302 ,  H01L21/306

CPC分类号： H01L21/78 ,  H01L21/3043 ,  H01L21/67132 ,  H01L21/6836 ,  H01L2221/68327

摘要： A processing method for a wafer includes: preparing a wafer which has a device region having plural devices formed on a surface of the wafer; and a peripheral reinforcing portion which is integrally formed around the device region and has a projection projecting outwardly on a rear surface of the wafer. The processing method further includes: removing at least the projection of the peripheral reinforcing portion of the wafer; and transferring the wafer after the removing. In the removing, while the wafer is held on a holding table such that the rear surface of the wafer is exposed and the surface of the wafer closely contacts the holding table, at least the projection of the peripheral reinforcing portion is removed. After the removing of at least the projection, while the wafer is held on the holding table, a holding tape is applied to the rear surface of the wafer and the holding tape is supported by a frame. In the transferring, the wafer having the holding tape applied thereon is separated together with the frame from the holding table and is transferred together with the frame.

摘要翻译： 晶片的处理方法包括：准备具有形成在晶片表面上的具有多个器件的器件区域的晶片; 以及周边加强部，其围绕所述器件区域一体地形成并且具有在所述晶片的后表面上向外突出的突起。 该处理方法还包括：至少去除晶片的外围加强部分的突起; 并且在移除之后转移晶片。 在移除时，当晶片被保持在保持台上，使得晶片的后表面暴露并且晶片的表面紧密地接触保持台时，至少外围加强部分的突起被去除。 在移除至少突起之后，当晶片保持在保持台上时，将保持带施加到晶片的后表面，并且保持带由框架支撑。 在转印中，具有施加在其上的保持带的晶片与框架一起从保持台分离，并与框架一起传送。