公开(公告)号：US20110143290A1

公开(公告)日：2011-06-16

申请号：US12963832

申请日：2010-12-09

申请人： Keiichi TANAKA ,  Yoshiaki YAMADA ,  Hitoshi KOSUGI

发明人： Keiichi TANAKA ,  Yoshiaki YAMADA ,  Hitoshi KOSUGI

IPC分类号： G03C5/00

CPC分类号： G03F7/3021

摘要： An extreme ultra violet (EUV) resist film is formed on a wafer W, and then a EUV light is radiated onto the EUV resist film formed on the wafer W so that a predetermined pattern is selectively exposed on the EUV resist film. Thereafter, a developing solution with a concentration of less than 2.38% by weight, whose temperature is adjusted to be 5° C. or higher and less than 23° C. in a supplying equipment group 138, is dispensed from a developing solution supply nozzle 133 to the EUV resist film formed on the wafer W so that the EUV resist film is subject to development. In such a case, a time period during which the developing treatment is performed using the developing solution may be set to fall within the range of 10 seconds or higher to less than 30 seconds. And then, pure water is supplied from a pure water supply nozzle 140 onto the wafer W to clean the wafer. The time period during which the pure water is supplied is set to fall within the range of 30 seconds or below.

摘要翻译： 在晶片W上形成极紫外（EUV）抗蚀剂膜，然后将EUV光照射到形成在晶片W上的EUV抗蚀剂膜上，使得在EUV抗蚀剂膜上选择性地暴露预定图案。 此后，从供给设备组138中将温度调节为5℃以上且小于23℃的浓度小于2.38重量％的显影液从显影液供给喷嘴 133到形成在晶片W上的EUV抗蚀剂膜，使得EUV抗蚀剂膜被显影。 在这种情况下，使用显影液进行显影处理的时间段可以设定在10秒以上至小于30秒的范围内。 然后，纯水从纯水供应喷嘴140供应到晶片W上以清洁晶片。 将纯水供给的时间设定为30秒以下的范围。

公开(公告)号：US20110143289A1

公开(公告)日：2011-06-16

申请号：US12957442

申请日：2010-12-01

申请人： Yoshiaki YAMADA ,  Keiichi TANAKA ,  Hitoshi KOSUGI

发明人： Yoshiaki YAMADA ,  Keiichi TANAKA ,  Hitoshi KOSUGI

IPC分类号： G03F7/00 ,  G03B27/52

CPC分类号： G03F7/38

摘要： A PEB unit has a first heat plate and a second heat plate. After an exposure process for a resist film for EUV on a wafer and before a development process, the PEB unit heats the wafer through the first heat plate at a first heating temperature. A heating time through the first heat plate is not less than 10 seconds and not more than 30 seconds. Thereafter, the PEB unit heats the wafer through the second heat plate at a second heating temperature lower than the first heating temperature. A temperature difference between the first heating temperature and the second heating temperature is not less than 20° C. and not more than 60° C.

摘要翻译： PEB单元具有第一加热板和第二加热板。 在晶片上并且在显影处理之前用于EUV的抗蚀剂膜的曝光处理之后，PEB单元在第一加热温度下通过第一加热板加热晶片。 通过第一加热板的加热时间不小于10秒且不超过30秒。 此后，PEB单元在低于第一加热温度的第二加热温度下通过第二加热板加热晶片。 第一加热温度和第二加热温度之间的温差不小于20℃且不大于60℃。

公开(公告)号：US20080018868A1

公开(公告)日：2008-01-24

申请号：US11778412

申请日：2007-07-16

申请人： Taro YAMAMOTO ,  Hitoshi KOSUGI ,  Yoshiaki YAMADA ,  Yasuhito SAIGA

发明人： Taro YAMAMOTO ,  Hitoshi KOSUGI ,  Yoshiaki YAMADA ,  Yasuhito SAIGA

IPC分类号： G03B27/42 ,  G21K5/10

CPC分类号： G03F7/38 ,  G03F7/168 ,  G03F7/70341 ,  G03F7/70991 ,  Y10S438/908

摘要： A circulation system for a high refractive index liquid includes a first collecting section configured to collect a high refractive index liquid used in an immersion light exposure section; a first supply section configured to supply the high refractive index liquid collected in the first collecting section to a cleaning section as a cleaning liquid; a second collecting section configured to collect the high refractive index liquid used in the cleaning section; and a second supply section configured to supply the high refractive index liquid collected in the second collecting section to the immersion light exposure section, wherein the high refractive index liquid is circulated between the immersion light exposure section and the cleaning section.

摘要翻译： 用于高折射率液体的循环系统包括：第一收集部分，被配置为收集在浸没曝光部分中使用的高折射率液体; 第一供给部构造成将收集在第一收集部中的高折射率液体供给到作为清洗液的清洗部; 第二收集部，其构造成收集在所述清洗部中使用的高折射率液体; 以及第二供给部，被构造成将在第二收集部中收集的高折射率液体供给到浸没曝光部，其中高折射率液体在浸没曝光部和清洁部之间循环。