摘要:
As nonvolatile memory is integrated on a substrate on which a solid-state image sensor device including: photoelectric converters arranged in rows and columns; vertical CCDs configured to transfer signal charge output from the photoelectric converters in the column direction; and a horizontal CCD configured to transfer signal charge output from the vertical CCDs in the row direction and output the signal charge as a video signal. The nonvolatile memory stores individual difference information indicating individual differences in dependence of saturation performance on a substrate voltage in the solid-state image sensor device, and outputs the stored individual difference information to the outside.
摘要:
An imaging apparatus includes: a lens; a solid-state imaging device having, on its top surface, an imaging area in which pixels for converting incident light to a signal are arranged in rows and columns, a vertical scanning circuit located adjacent to the imaging area in a row direction, a peripheral circuit for processing the signal read from the imaging area, and a plurality of terminals; and a prism placed directly on the imaging area for leading the incident light to the imaging area. Light exposure is adjusted by varying brightness of light output from a processor according to a magnitude of the signal output from the solid-state imaging device.
摘要:
A solid-state image sensing element (1) has a main face provided with an imaging region (1a) in which unit pixels containing photoelectric conversion elements are formed in matrix. Peripheral circuit elements (3, 4) are configured to control imaging operation of the solid-state image sensing element (1) or to perform signal processing of an image output of the solid-state image sensing element (1). The imaging region (1a) is covered with a transparent material (2). The peripheral circuit elements (3, 4) are mounted to a region of the main face of the solid-state image sensing element (1) except for the imaging region (1a) such that main faces of the peripheral circuit elements (3, 4) face the main face of the solid-state image sensing element (1).
摘要:
A row scanner selects an arbitrary row in an pixel array unit. Per-column AD converters separately convert voltage signals respectively outputted from a column of a plurality of unit pixels in the selected arbitrary row into digital signals. A column scanner sequentially outputs the digital signals by a column-scanning operation thereof. An AD conversion result adjuster judges whether or not the digital signals reach a predetermined judgment value or the status equivalent to the digital signals reaching the predetermined judgment value is generated, and fixes the digital signals to digital pixel values set in accordance with the predetermined judgment value when a result of the judgment is positive.