公开(公告)号：US4769560A

公开(公告)日：1988-09-06

申请号：US13793

申请日：1987-02-12

Applicant: Keizo Tani ,  Junichi Nakao ,  Eiji Kotani

Inventor： Keizo Tani ,  Junichi Nakao ,  Eiji Kotani

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/732 ,  H03F1/32 ,  H03F3/343 ,  H03K3/33 ,  H01L27/02 ,  H03K17/56

CPC classification number: H03F1/32 ,  H03F3/3435

Abstract: An additional p-n junction diode, having a forward bias voltage smaller than a forward bias voltage between the base and emitter of a first-stage specific transistor of 3-stage Darlington connected npn transistors, is electrically connected in parallel between a p-type base layer and an n-type collector layer of the specific transistor. The polarities of the p-type and n-type layers of the diode are respectively the same as those of the parallel-connected p-type base and n-type collector layers of the specific transistor.

Abstract translation: 具有小于三阶段达林顿连接的npn晶体管的第一级特定晶体管的基极和发射极之间的正向偏置电压的正向偏置电压的附加pn结二极管并联电连接在p型基极层 和特定晶体管的n型集电极层。 二极管的p型和n型层的极性分别与特定晶体管的并联p型基极和n型集电极层的极性相同。