公开(公告)号：US20110143537A1

公开(公告)日：2011-06-16

申请号：US12913965

申请日：2010-10-28

Applicant: Jeong-Yun LEE ,  Ken TOKASHIKI ,  Kyoung-Sub SHIN ,  Jun-Ho YOON ,  Hong CHO

Inventor： Jeong-Yun LEE ,  Ken TOKASHIKI ,  Kyoung-Sub SHIN ,  Jun-Ho YOON ,  Hong CHO

IPC: H01L21/768

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/32155

Abstract: Provided are a method of fabricating a semiconductor device and synchronous pulse plasma etching equipment for the same. The method includes outputting a first radio frequency (RF) power and a control signal and outputting a second RF power. The first RF power is pulse-width modulated to have a first frequency and a first duty ratio, and is applied to a first electrode in a plasma etching chamber. The control signal includes information on a phase of the first RF power. The second RF power is pulse-width modulated to have the first frequency and a second duty ratio smaller than the first duty ratio, is applied to a corresponding second electrode among second electrodes in the plasma etching chamber, and is supplied for a time section in which the first RF power is supplied.

Abstract translation: 提供一种半导体器件和同步脉冲等离子体蚀刻设备的制造方法。 该方法包括输出第一射频（RF）功率和控制信号并输出​​第二RF功率。 第一RF功率被脉冲宽度调制以具有第一频率和第一占空比，并且被施加到等离子体蚀刻室中的第一电极。 控制信号包括关于第一RF功率的相位的信息。 第二RF功率被脉冲宽度调制成具有小于第一占空比的第一频率和第二占空比，被施加到等离子体蚀刻室中的第二电极中的对应的第二电极，并且被提供给 提供第一RF功率。

公开(公告)号：US20150287911A1

公开(公告)日：2015-10-08

申请号：US14611717

申请日：2015-02-02

Applicant: Kyoung-Sun KIM ,  Woo-Jin KIM ,  Ken TOKASHIKI

Inventor： Kyoung-Sun KIM ,  Woo-Jin KIM ,  Ken TOKASHIKI

IPC: H01L43/12 ,  H01L27/22

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/228

Abstract: In a method of manufacturing a MRAM device, a lower electrode is formed on a substrate. A first magnetic layer, a tunnel barrier layer, and a second magnetic layer are sequentially formed on the lower electrode layer. An etching mask is formed on the second magnetic layer. An ion beam etching process in which a first ion beam and a second ion beam are simultaneously emitted onto the substrate is performed to form a MTJ structure including a first magnetic layer pattern, a tunnel layer pattern, and a second magnetic layer pattern from the first magnetic layer, the tunnel barrier layer, and the second magnetic layer, respectively, the MTJ structure has no by-products remaining after the ion beam etching process is performed.

Abstract translation: 在制造MRAM器件的方法中，在基片上形成下电极。 第一磁性层，隧道势垒层和第二磁性层依次形成在下部电极层上。 在第二磁性层上形成蚀刻掩模。 执行其中第一离子束和第二离子束同时发射到衬底上的离子束蚀刻工艺，以形成包括第一磁性层图案，隧道层图案和第二磁性层图案的MTJ结构 磁性层，隧道势垒层和第二磁性层，在执行离子束蚀刻处理之后，MTJ结构没有剩余副产物。

公开(公告)号：US20150069560A1

公开(公告)日：2015-03-12

申请号：US14311238

申请日：2014-06-20

Applicant: Yoonchul CHO ,  Ken TOKASHIKI

Inventor： Yoonchul CHO ,  Ken TOKASHIKI

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/226 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: Magnetic memory devices and methods of manufacturing the same are disclosed. A method may include forming a magnetic tunnel junction layer on a substrate, forming mask patterns on the magnetic tunnel junction layer, and sequentially performing a plurality of ion implantation processes using the mask patterns as ion implantation masks to form an isolation region in the magnetic tunnel junction layer. The isolation region may thereby define magnetic tunnel junction parts that are disposed under corresponding ones of the mask patterns. A magnetic memory device may include a plurality of magnetic tunnel junction parts electrically and magnetically isolated from each other through the isolation region.

Abstract translation: 公开了磁存储器件及其制造方法。 一种方法可以包括在衬底上形成磁性隧道结层，在磁性隧道结层上形成掩模图案，并使用掩模图案依次执行多个离子注入工艺，作为离子注入掩模，以在磁隧道中形成隔离区 结层。 因此，隔离区域可以限定设置在相应的掩模图案下的磁性隧道结部分。 磁存储器件可以包括通过隔离区域彼此电隔离和磁隔离的多个磁性隧道结部分。

公开(公告)号：US20150044781A1

公开(公告)日：2015-02-12

申请号：US14286407

申请日：2014-05-23

Applicant: Ken TOKASHIKI

Inventor： Ken TOKASHIKI

IPC: H01L43/12

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L21/02071 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226

Abstract: Provided is a method of forming a magnetic memory device. A first magnetic layer, a tunnel barrier, and a second magnetic layer are deposited on a substrate. The second magnetic layer, the tunnel barrier, and the first magnetic layer are etched to form magnetic tunnel junction structures. An ion beam etching process is performed using an oxygen-containing source gas to remove etching by-products on sidewalls of the magnetic tunnel junction structure and to oxidize the sidewalls of the magnetic tunnel junction structures.

Abstract translation: 提供一种形成磁存储器件的方法。 在基板上沉积第一磁性层，隧道势垒和第二磁性层。 蚀刻第二磁性层，隧道势垒和第一磁性层以形成磁性隧道结结构。 使用含氧源气体进行离子束蚀刻工艺，以去除在磁性隧道结结构的侧壁上的蚀刻副产物并氧化磁性隧道结结构的侧壁。

公开(公告)号：US20160351795A1

公开(公告)日：2016-12-01

申请号：US15233939

申请日：2016-08-10

Applicant: Yoonchul CHO ,  Ken TOKASHIKI

Inventor： Yoonchul CHO ,  Ken TOKASHIKI

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/226 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: Magnetic memory devices and methods of manufacturing the same are disclosed. A method may include forming a magnetic tunnel junction layer on a substrate, forming mask patterns on the magnetic tunnel junction layer, and sequentially performing a plurality of ion implantation processes using the mask patterns as ion implantation masks to form an isolation region in the magnetic tunnel junction layer. The isolation region may thereby define magnetic tunnel junction parts that are disposed under corresponding ones of the mask patterns. A magnetic memory device may include a plurality of magnetic tunnel junction parts electrically and magnetically isolated from each other through the isolation region.