公开(公告)号：US20240339297A1

公开(公告)日：2024-10-10

申请号：US18296944

申请日：2023-04-06

Applicant: Tokyo Electron Limited

Inventor： Qiang Wang ,  Peter Lowell George Ventzek ,  Shyam Sridhar ,  Mitsunori Ohata

IPC: H01J37/32 ,  H03H7/38

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J37/3211 ,  H03H7/38 ,  H01J37/32155 ,  H01J2237/24564 ,  H01J2237/334

Abstract: An embodiment matching circuit for a plasma tool includes an impedance matching network configured to be coupled between a power supply and an antenna of a plasma chamber. The power supply is configured to provide power to and excite the antenna at a first frequency to generate a plasma. The impedance matching network is configured such that, during operation of the plasma chamber at the first frequency, a phase angle between a voltage and a current in the impedance matching network is matched to be 0°, and an impedance of the impedance matching network and the plasma chamber equals an impedance of the power supply. The impedance matching network includes a first adjustable reactive component; and a first fixed-length transmission line coupled between the first adjustable reactive component and an input of the antenna.

公开(公告)号：US20240274406A1

公开(公告)日：2024-08-15

申请号：US18562565

申请日：2022-05-02

Applicant: EN2CORE TECHNOLOGY, INC.

Inventor： Se Hong PARK ,  Yeonghoon SOHN ,  Dong JEGAL ,  Jihoon KIM ,  Sae Hoon UHM

IPC: H01J37/32 ,  H03K3/012

CPC classification number: H01J37/32155 ,  H01J37/321 ,  H01J37/32183 ,  H03K3/012 ,  H01J2237/334

Abstract: According to one embodiment of the present disclosure, a semiconductor process system could be provided, the system comprising a substrate holder where a substrate is placed and an electrode is included, and a frequency generating device providing bias power to the electrode, wherein the frequency generating device provides the bias power of different patterns to the electrode in a first period for performing a main process on the substrate and a second period for performing an auxiliary process on the substrate, and wherein at least one of the first period or the second period is adjusted to be 30 microseconds or smaller.

公开(公告)号：US20240222082A1

公开(公告)日：2024-07-04

申请号：US18396693

申请日：2023-12-26

Applicant: DAIHEN Corporation

Inventor： Yuichi HASEGAWA ,  Yuya UENO

IPC: H01J37/32 ,  H03H7/40

CPC classification number: H01J37/32183 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32155 ,  H03H7/40

Abstract: A high-frequency power supply system according to the present disclosure includes a first power supply, a second power supply, a first matcher, and a second matcher. The second power supply performs pulse modulation of repeating an ON operation of outputting a second forward wave voltage and an OFF operation of not outputting the second forward wave voltage are repeated. The first power supply performs frequency modulation control in a second power supply ON period, and outputs a first forward wave voltage having a first fundamental frequency in a second power supply OFF period.

公开(公告)号：US11996276B2

公开(公告)日：2024-05-28

申请号：US18168362

申请日：2023-02-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Otto Chen ,  Chi-Ying Wu ,  Chia-Chih Chen

IPC: H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32935 ,  H01J37/244 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32449 ,  H01J37/3266 ,  H01J2237/24405 ,  H01J2237/24465 ,  H01J2237/24507 ,  H01J2237/24564

Abstract: An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.

公开(公告)号：US11972925B2

公开(公告)日：2024-04-30

申请号：US17314517

申请日：2021-05-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Bong seong Kim ,  Ken Kobayashi ,  Mitsunori Ohata ,  Yoon Ho Bae

IPC: H01L21/00 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32146 ,  H01J37/321 ,  H01J37/32155 ,  H01J37/32568 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/6831 ,  H01J2237/3343

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed in the plasma processing chamber and including a lower electrode; a source RF generator coupled to the plasma processing chamber and configured to generate a source RF signal including high states and low states in alternate manner; and a bias DC generator coupled to the lower electrode and configured to generate a bias DC signal including ON states and OFF states in alternate manner. Each ON state includes a plurality of cycles, each cycle including a first sequence of first pulses and a second sequence of second pulses, each first pulse having a first voltage level, and each second pulse having a second voltage level different from the first voltage level.

公开(公告)号：US11929235B2

公开(公告)日：2024-03-12

申请号：US17616987

申请日：2020-05-06

Applicant: Lam Research Corporation

Inventor： Arthur M. Howald ,  John C. Valcore, Jr.

IPC: H01J37/32

CPC classification number: H01J37/32155 ,  H01J37/32183

Abstract: Systems and methods for tuning a megahertz radio frequency (RF) generator within a cycle of operation of a kilohertz (kHz) RF generator are described. In one of the methods, a predetermined periodic waveform is provided to a processor. The processor uses a computer-based model to determine plurality of frequency parameters for the predetermined periodic waveform. The frequency parameters are applied to the megahertz RF generator to generate an RF signal having the frequency parameters during one or more cycles of operation of the kilohertz RF generator.

公开(公告)号：US20240006152A1

公开(公告)日：2024-01-04

申请号：US18368110

申请日：2023-09-14

Applicant: Tokyo Electron Limited

Inventor： Maju TOMURA ,  Nobuyuki FUKUI ,  Yoshihide KIHARA

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/033

CPC classification number: H01J37/32174 ,  H01J37/32155 ,  H01L21/31144 ,  H01L21/0332 ,  H01J2237/3341 ,  H01J37/32027

Abstract: A method for etching a substrate includes: (a) providing a substrate processing apparatus including a processing chamber that forms a processing space, a substrate support provided inside the processing chamber to hold a substrate, and a power supply that supplies a bias power to at least the substrate support; (b) providing the substrate on the substrate support, the substrate including an underlying layer and an organic material layer on the underlying layer; (c) generating plasma in the processing chamber; and (d) repeating a predetermined cycle including an ON time during which the bias power is supplied to the substrate support and an OFF time during which the bias power is not supplied to the substrate support. The OFF time is 10 msec or longer.

公开(公告)号：US20190051497A1

公开(公告)日：2019-02-14

申请号：US16162769

申请日：2018-10-17

Applicant: LAM RESEARCH CORPORATION

Inventor： Maolin Long ,  John Drewery ,  Alex Paterson

IPC: H01J37/32 ,  G01R15/04 ,  G01R15/26 ,  G01R19/00

CPC classification number: H01J37/32183 ,  G01R15/04 ,  G01R15/06 ,  G01R15/26 ,  G01R19/0061 ,  G01R19/0084 ,  H01J37/32155 ,  H01J37/32577 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/332 ,  H01J2237/334

Abstract: A voltage sensor for a substrate processing system is provided. The voltage sensor includes a terminal, a first channel, and a second channel. The terminal connects to a pickup device of a substrate support in the substrate processing system. The first channel is configured to detect, at the pickup device, first radio frequency voltages in a first voltage range. The first channel includes a first voltage divider. The first voltage divider is connected to the terminal and is configured to output a first reduced voltage representative of a detected one of the first radio frequency voltages. The second channel is configured to detect, at the pickup device, second radio frequency voltages in a second voltage range. The second channel includes a second voltage divider. The second voltage divider is connected to the terminal and is configured to output a second reduced voltage representative of a detected one of the second radio frequency voltages. The second voltage range is different than the first voltage range.

公开(公告)号：US10083818B2

公开(公告)日：2018-09-25

申请号：US14863153

申请日：2015-09-23

Applicant: Applied Materials, Inc.

Inventor： Abdul Aziz Khaja ,  Mohamad A. Ayoub ,  Ramesh Bokka ,  Jay D. Pinson, II ,  Juan Carlos Rocha-Alvarez

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32155 ,  H01J37/32357 ,  H01J37/32458

Abstract: A remote plasma source is disclosed that includes a core element and a first plasma block including one or more surfaces at least partially enclosing an annular-shaped plasma generating region that is disposed around a first portion of the core element. The remote plasma source further comprises one or more coils disposed around respective second portions of the core element. The remote plasma source further includes an RF power source configured to drive a RF power signal onto the one or more coils that is based on a determined impedance of the plasma generating region. Energy from the RF power signal is coupled with the plasma generating region via the one or more coils and the core element.

公开(公告)号：US20180151331A1

公开(公告)日：2018-05-31

申请号：US15365864

申请日：2016-11-30

Applicant: Lam Research Corporation

Inventor： Chin-Yi Liu ,  David Schaefer ,  Dan Marohl

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32155 ,  H01J37/3299 ,  H01J2237/24564 ,  H01J2237/327 ,  H01L21/26

Abstract: A system is disclosed for measuring an impedance of a plasma processing chamber. The system includes a radiofrequency signal generator configured to output a radiofrequency signal based on a frequency setpoint and provide an indication of an actual frequency of the radiofrequency signal, where the actual frequency can be different than the frequency setpoint. The system includes an impedance control module including at least one variable impedance control device. A difference between the actual frequency of the radiofrequency signal as output by the radiofrequency signal generator and the frequency setpoint is partially dependent upon a setting of the at least one variable impedance control device and is partially dependent upon the impedance of the plasma processing chamber. The system includes a connector configured to connect with a radiofrequency signal supply line of the plasma processing chamber. The impedance control module is connected between the radiofrequency signal generator and the connector.