公开(公告)号：US20110087039A2

公开(公告)日：2011-04-14

申请号：US12439364

申请日：2007-08-20

申请人： Ken-ichi TADA ,  Taishi FURUKAWA ,  Koichiro INABA ,  Tadahiro YOTSUYA ,  Hirokazu CHIBA ,  Toshiki YAMAMOTO ,  Tetsu YAMAKAWA ,  Noriaki OSHIMA

发明人： Ken-ichi TADA ,  Taishi FURUKAWA ,  Koichiro INABA ,  Tadahiro YOTSUYA ,  Hirokazu CHIBA ,  Toshiki YAMAMOTO ,  Tetsu YAMAKAWA ,  Noriaki OSHIMA

IPC分类号： C07F19/00

CPC分类号： C23C16/18 ,  C01G33/00 ,  C01G35/00 ,  C01P2002/88 ,  C07C211/65 ,  C07C251/08 ,  C07F9/005 ,  C23C16/405

摘要： Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

摘要翻译： 本发明的目的是提供一种具有良好蒸气压的新型铌或钽络合物，并且通过诸如CVD法，ALD法等的方法成为生产含铌或钽的薄膜的原料， 为了制造它们，使用该薄膜的含金属薄膜及其制造方法。 本发明涉及通过例如M1（NR1）X3（L）r（2）和碱金属醇盐（3）之间的反应来制备由通式（1）表示的酰亚胺络合物：（其中M1表示 铌原子或钽原子，R1表示碳原子数1〜12的烷基，R2表示碳原子数2〜13的烷基，X表示卤素原子，当L为1,2-二甲氧基乙烷配体时，r为1， 当L为吡啶配体时，r为2，M2表示碱金属，通过使用酰亚胺络合物（1）作为原料制造含有铌或钽的薄膜。