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23 条记录 (耗时 0.018 秒)

    TANTALUM COMPOUND, METHOD FOR PRODUCING SAME, TANTALUM-CONTAINING THIN FILM AND METHOD FOR FORMING SAME
    1.
    发明申请
    TANTALUM COMPOUND, METHOD FOR PRODUCING SAME, TANTALUM-CONTAINING THIN FILM AND METHOD FOR FORMING SAME 有权
    钛化合物，其制造方法，含有薄膜的薄膜及其形成方法

    公开(公告)号：US20090043119A1

    公开(公告)日：2009-02-12

    申请号：US11815386

    申请日：2006-01-25

    申请人： Kenichi Sekimoto ,  Ken-ichi Tada ,  Mayumi Takamori ,  Tetsu Yamakawa ,  Taishi Furukawa ,  Noriaki Oshima

    发明人： Kenichi Sekimoto ,  Ken-ichi Tada ,  Mayumi Takamori ,  Tetsu Yamakawa ,  Taishi Furukawa ,  Noriaki Oshima

    IPC分类号： C07F9/00

    CPC分类号： C23C16/18 ,  C07F17/00

    摘要： Objects of the present invention are to provide a novel tantalum compound which enables to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element, and a method for producing the same, and further provide a method for stably forming a tantalum-containing thin film which contains the desired element.The present invention relates to a tantalum compound represented by the following formula (1) (In the formula, R1 represents a straight-chain alkyl group having from 2 to 6 carbon atoms), or a tantalum compound represented by the general formula (2) (In the formula, R2 represents a straight-chain alkyl group having from 2 to 6 carbon atoms), and a method for producing the same.The present invention further relates to form a tantalum-containing thin film by using a tantalum compound represented by the following general formula (6) (In the formula, j, k, m and n is an integer of from 1 to satisfying j+k=5 and m+n=5, and R3 to R6 represent a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms, and the like) as a raw material.

    摘要翻译： 本发明的目的是提供一种新颖的钽化合物，其能够选择性地形成不含卤素等的含钽薄膜，以及含有所需元素的各种含钽薄膜及其制造方法 并且还提供了一种稳定地形成含有所需元素的含钽薄膜的方法。 本发明涉及由下式（1）表示的钽化合物（式中，R1表示碳原子数2〜6的直链烷基）或通式（2）表示的钽化合物， （式中，R 2表示碳原子数2〜6的直链烷基）及其制造方法。 本发明还涉及通过使用由以下通式（6）表示的钽化合物形成含钽薄膜（在式中，j，k，m和n是从1到满足j + k的整数 = 5，m + n = 5，R3〜R6表示氢原子，碳原子数1〜6的烷基等）作为原料。

    Process for Producing 1-Substituted-3-Fluoroalkylpyrazole-4-Carboxylate
    2.
    发明申请
    Process for Producing 1-Substituted-3-Fluoroalkylpyrazole-4-Carboxylate 有权
    1-取代的3-氟烷基吡唑-4-羧酸酯的制备方法

    公开(公告)号：US20080154045A1

    公开(公告)日：2008-06-26

    申请号：US11884665

    申请日：2006-02-23

    申请人： Hidenori Aihara ,  Wakako Yokota ,  Tetsu Yamakawa ,  Kenji Hirai

    发明人： Hidenori Aihara ,  Wakako Yokota ,  Tetsu Yamakawa ,  Kenji Hirai

    IPC分类号： C07D231/14

    CPC分类号： C07D231/14

    摘要： In a process for producing 1-substituted-3-fluoroalkyl-pyrazole-4-carboxylate (3) by a reaction of 2-alkoxymethylenefluoroacylacetate (1) and hydrazine (2), the reaction is conducted in the presence of a base and water, to produce 1-substituted-3-fluoroalkylpyrazole-4-carboxylate (3) with high selectivity and yield. This novel process enables to produce 1-substituted-3-fluoroalkylpyrazole-4-carboxylate (3), which is useful as an intermediate for pharmaceuticals and agrochemicals, with high selectivity and yield by simple and safe operations.

    摘要翻译： 在通过2-烷氧基甲基三氟酰基乙酸酯（1）和肼（2）的反应制备1-取代-3-氟烷基 - 吡唑-4-羧酸酯（3）的方法中，反应在碱和水的存在下进行， 以高选择性和产率制备1-取代-3-氟烷基吡唑-4-羧酸酯（3）。 该新方法能够通过简单和安全的操作产生具有高选择性和产率的1-取代-3-氟烷基吡唑-4-羧酸酯（3），其可用作药物和农用化学品的中间体。

    Imide complex, method for producing the same, metal-containing thin film and method for producing the same
    5.
    发明授权
    Imide complex, method for producing the same, metal-containing thin film and method for producing the same 有权
    酰亚胺络合物，其制造方法，含金属薄膜及其制造方法

    公开(公告)号：US07906668B2

    公开(公告)日：2011-03-15

    申请号：US12439364

    申请日：2007-08-20

    申请人： Ken-ichi Tada ,  Taishi Furukawa ,  Koichiro Inaba ,  Tadahiro Yotsuya ,  Hirokazu Chiba ,  Toshiki Yamamoto ,  Tetsu Yamakawa ,  Noriaki Oshima

    发明人： Ken-ichi Tada ,  Taishi Furukawa ,  Koichiro Inaba ,  Tadahiro Yotsuya ,  Hirokazu Chiba ,  Toshiki Yamamoto ,  Tetsu Yamakawa ,  Noriaki Oshima

    IPC分类号： C07F9/00 ,  C23C16/00

    CPC分类号： C23C16/18 ,  C01G33/00 ,  C01G35/00 ,  C01P2002/88 ,  C07C211/65 ,  C07C251/08 ,  C07F9/005 ,  C23C16/405

    摘要： Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

    摘要翻译： 本发明的目的是提供一种具有良好蒸气压的新型铌或钽络合物，并且通过诸如CVD法，ALD法等的方法成为生产含铌或钽的薄膜的原料， 为了制造它们，使用该薄膜的含金属薄膜及其制造方法。 本发明涉及通过例如M1（NR1）X3（L）r（2）和碱金属醇盐（3）之间的反应来制备由通式（1）表示的酰亚胺络合物：（其中M1表示 铌原子或钽原子，R1表示碳原子数1〜12的烷基，R2表示碳原子数2〜13的烷基，X表示卤素原子，当L为1,2-二甲氧基乙烷配体时，r为1， 当L为吡啶配体时，r为2，M2表示碱金属，通过使用酰亚胺络合物（1）作为原料制造含有铌或钽的薄膜。

    IMIDE COMPLEX, METHOD FOR PRODUCING THE SAME, METAL-CONTAINING THIN FILM AND METHOD FOR PRODUCING THE SAME
    6.
    发明申请
    IMIDE COMPLEX, METHOD FOR PRODUCING THE SAME, METAL-CONTAINING THIN FILM AND METHOD FOR PRODUCING THE SAME 有权
    复合物，其制造方法，含金属薄膜及其制造方法

    公开(公告)号：US20110087039A2

    公开(公告)日：2011-04-14

    申请号：US12439364

    申请日：2007-08-20

    申请人： Ken-ichi TADA ,  Taishi FURUKAWA ,  Koichiro INABA ,  Tadahiro YOTSUYA ,  Hirokazu CHIBA ,  Toshiki YAMAMOTO ,  Tetsu YAMAKAWA ,  Noriaki OSHIMA

    发明人： Ken-ichi TADA ,  Taishi FURUKAWA ,  Koichiro INABA ,  Tadahiro YOTSUYA ,  Hirokazu CHIBA ,  Toshiki YAMAMOTO ,  Tetsu YAMAKAWA ,  Noriaki OSHIMA

    IPC分类号： C07F19/00

    CPC分类号： C23C16/18 ,  C01G33/00 ,  C01G35/00 ,  C01P2002/88 ,  C07C211/65 ,  C07C251/08 ,  C07F9/005 ,  C23C16/405

    摘要： Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

    摘要翻译： 本发明的目的是提供一种具有良好蒸气压的新型铌或钽络合物，并且通过诸如CVD法，ALD法等的方法成为生产含铌或钽的薄膜的原料， 为了制造它们，使用该薄膜的含金属薄膜及其制造方法。 本发明涉及通过例如M1（NR1）X3（L）r（2）和碱金属醇盐（3）之间的反应来制备由通式（1）表示的酰亚胺络合物：（其中M1表示 铌原子或钽原子，R1表示碳原子数1〜12的烷基，R2表示碳原子数2〜13的烷基，X表示卤素原子，当L为1,2-二甲氧基乙烷配体时，r为1， 当L为吡啶配体时，r为2，M2表示碱金属，通过使用酰亚胺络合物（1）作为原料制造含有铌或钽的薄膜。

    TITANIUM COMPLEXES, THEIR PRODUCTION METHODS, TITANIUM-CONTAINING THIN FILMS, AND THEIR FORMATION METHODS
    10.
    发明申请
    TITANIUM COMPLEXES, THEIR PRODUCTION METHODS, TITANIUM-CONTAINING THIN FILMS, AND THEIR FORMATION METHODS 失效
    钛复合物，其生产方法，含钛薄膜及其形成方法

    公开(公告)号：US20090036697A1

    公开(公告)日：2009-02-05

    申请号：US12093389

    申请日：2006-11-01

    申请人： Ken-ichi Tada ,  Koichiro Inaba ,  Taishi Furukawa ,  Hirokazu Chiba ,  Tetsu Yamakawa ,  Noriaki Oshima

    发明人： Ken-ichi Tada ,  Koichiro Inaba ,  Taishi Furukawa ,  Hirokazu Chiba ,  Tetsu Yamakawa ,  Noriaki Oshima

    IPC分类号： C07F7/28

    CPC分类号： C23C16/18 ,  C07C211/65 ,  C07C251/08 ,  C07F7/003 ,  C23C16/34 ,  C23C16/405

    摘要： Objects of the present invention are to provide a novel titanium complex that has good vaporization characteristics and an excellent thermal stability, and becomes a raw material for forming a titanium-containing thin film by methods such as CVD method or ALD method, its production method, a titanium-containing thin film formed using the same, and its formation method. In the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) and metallic lithium, and then reacting a tetrakisamide complex represented by the general formula (3). (In the formulae, R1 and R4 represent an alkyl group having from 1 to 6 carbon atoms. R2 and R3 each independently represents a hydrogen atom or an alkyl group having from 1 to 3 carbon atoms. R5 and R6 each independently represents an alkyl group having from 1 to 4 carbon atoms.).

    摘要翻译： 本发明的目的是提供具有良好的蒸发特性和优异的热稳定性的新颖的钛络合物，并且成为通过CVD法或ALD法等方法形成含钛薄膜的原料，其制造方法， 使用其形成的含钛薄膜及其形成方法。 在本发明中，由通式（1）表示的钛络合物通过使由通式（2）表示的二亚氨基与金属锂反应，然后使由通式（3）表示的四酰胺配合物反应来制备。 （式中，R 1和R 4表示碳原子数1〜6的烷基，R 2和R 3各自独立地表示氢原子或碳原子数1〜3的烷基，R 5和R 6各自独立地表示烷基 具有1至4个碳原子）。