公开(公告)号：US20120220132A1

公开(公告)日：2012-08-30

申请号：US13403604

申请日：2012-02-23

申请人： Kenichi OYAMA ,  Shohei YAMAUCHI ,  Hidetami YAEGASHI

发明人： Kenichi OYAMA ,  Shohei YAMAUCHI ,  Hidetami YAEGASHI

IPC分类号： H01L21/32

CPC分类号： H01L21/32139 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32137

摘要： A semiconductor device manufacturing method includes: forming a core layer, an anti-reflection film and a photoresist layer on a layer to be etched of a substrate; trimming first line patterns of the photoresist layer; forming a first film on the first line patterns; removing the first film such that the first film is left in sidewall portions of the first line patterns of the photoresist layer; removing the photoresist layer; producing the core layer into second line patterns by etching the anti-reflection film and the core layer; forming a second film on the core layer produced into the second line patterns; removing the second film such that the second film is left in sidewall portions of the second line patterns of the core layer; and producing the layer to be etched into third line patterns by etching the layer to be etched.

摘要翻译： 半导体器件制造方法包括：在要蚀刻的衬底的层上形成芯层，抗反射膜和光致抗蚀剂层; 修整光致抗蚀剂层的第一线图案; 在第一线图案上形成第一片; 去除第一膜，使得第一膜留在光致抗蚀剂层的第一线图案的侧壁部分中; 去除光致抗蚀剂层; 通过蚀刻防反射膜和芯层将芯层制成第二线图案; 在芯层上形成第二膜，形成第二线图案; 去除第二膜，使得第二膜留在芯层的第二线图案的侧壁部分中; 并通过蚀刻待蚀刻的层来产生要蚀刻的第三线图案。

公开(公告)号：US20120211873A1

公开(公告)日：2012-08-23

申请号：US13402547

申请日：2012-02-22

申请人： Kenichi OYAMA ,  Hidetami YAEGASHI

发明人： Kenichi OYAMA ,  Hidetami YAEGASHI

IPC分类号： H01L29/02 ,  H01L21/31

CPC分类号： H01L21/0337 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/31144

摘要： A method for forming a pattern includes: forming a resist film on an object and patterning the formed resist film; forming a spacer film to coat the object and the resist film, and forming a concave portion surrounded by the spacer film; forming a first opening from the concave portion by etching a portion of the spacer film so that the spacer film remains beside a side wall of the resist film while exposing the object under the concave portion and the top surface of the resist film; and forming a second opening by removing the resist film.

摘要翻译： 形成图案的方法包括：在物体上形成抗蚀剂膜并对所形成的抗蚀剂膜进行构图; 形成用于涂覆物体和抗蚀剂膜的间隔膜，并形成由间隔膜包围的凹部; 通过蚀刻间隔膜的一部分从凹部形成第一开口，使得隔离膜保持在抗蚀剂膜的侧壁旁边，同时使物体暴露在凹部和抗蚀剂膜的上表面下方; 并通过除去抗蚀剂膜形成第二开口。

公开(公告)号：US20100159402A1

公开(公告)日：2010-06-24

申请号：US12718568

申请日：2010-03-05

申请人： Hidetami YAEGASHI

发明人： Hidetami YAEGASHI

IPC分类号： G03F7/20 ,  G03B27/42

CPC分类号： H01L21/0337 ,  H01L21/0338 ,  H01L21/67178

摘要： The invention relates to a method for processing a substrate on which a target film is formed. The method includes forming a first film on the target layer; forming a second film on the first film, the second film being photosensitive; patterning the second film with a photolithography process; removing a portion of the first film selectively using the second film as a mask; removing a portion of the target film selectively using the second film as a mask; reducing the width of first film to an intended width by removing sidewall portions thereof; forming a third film at least on the first film and on the top of the target film; removing the first film and the second film; and removing a portion of the target film using the third film as a mask.

摘要翻译： 本发明涉及一种处理其上形成靶膜的基板的方法。 该方法包括在靶层上形成第一膜; 在第一膜上形成第二膜，第二膜是光敏的; 用光刻工艺图案化第二层膜; 使用所述第二膜作为掩模选择性地去除所述第一膜的一部分; 使用所述第二膜作为掩模选择性地去除所述靶膜的一部分; 通过去除其侧壁部分将第一膜的宽度减小到预定宽度; 至少在所述第一膜上和所述靶膜的顶部上形成第三膜; 去除第一膜和第二膜; 并且使用第三膜作为掩模去除目标膜的一部分。

公开(公告)号：US20120202301A1

公开(公告)日：2012-08-09

申请号：US13355724

申请日：2012-01-23

申请人： Hidetami YAEGASHI

发明人： Hidetami YAEGASHI

IPC分类号： H01L21/311 ,  H01L21/66

CPC分类号： H01L21/0228 ,  G03F7/0035 ,  G03F7/40 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31116 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A disclosed method of forming a mask pattern includes forming a first resist film on a film to be etched, opening portions on the first resist film at a predetermined pitch, a first film on the first resist film so as to cover sidewalls of the first opening portions, a second resist film, second opening portions alternately arranged with the first opening portions on the second resist film, and a second film on the second resist film so as to cover sidewalls of the second opening portions, and removing a part of the second film so that the second film is left as first sidewall portions, a part of the first resist film using the first sidewall portions as a mask to form third opening portions, and a part of the first film while leaving the first film as second sidewall portions to form fourth opening portions.

摘要翻译： 所公开的形成掩模图案的方法包括在要蚀刻的膜上形成第一抗蚀剂膜，以预定间距在第一抗蚀剂膜上形成开口部分，在第一抗蚀剂膜上形成第一膜，以覆盖第一开口的侧壁 部分，第二抗蚀剂膜，与第二抗蚀剂膜上的第一开口部分交替布置的第二开口部分，以及在第二抗蚀剂膜上的第二膜，以便覆盖第二开口部分的侧壁， 使得第二膜作为第一侧壁部分留下，使用第一侧壁部分作为掩模形成第三开口部分的第一抗蚀剂膜的一部分，以及第一膜的一部分，同时留下第一膜作为第二侧壁部分 以形成第四开口部分。