SURFACE ACOUSTIC WAVE DEVICE
    1.
    发明申请
    SURFACE ACOUSTIC WAVE DEVICE 有权
    表面声波设备

    公开(公告)号:US20060290233A1

    公开(公告)日:2006-12-28

    申请号:US11469505

    申请日:2006-09-01

    IPC分类号: H03H9/25

    摘要: A surface acoustic wave device includes a piezoelectric substrate made of LiTaO3 or LiNbO3 having an electromechanical coefficient of about 15% or more, at least one electrode which is disposed on the piezoelectric substrate and which is a laminate film having a metal layer defining a primary metal layer primarily composed of a metal having a density higher than that of Al or an alloy of the metal and a metal layer which is laminated on the primary metal layer and which is composed of another metal, and a first SiO2 layer which is disposed in a remaining area other than that at which the at least one electrode is located and which has a thickness approximately equivalent to that of the electrode. In the surface acoustic wave device described above, the density of the electrode is at least about 1.5 times that of the first SiO2 layer. In addition, a second SiO2 layer disposed so as to cover the electrode and the first SiO2 layer and a silicon nitride compound layer disposed on the second SiO2 layer are further provided.

    摘要翻译: 表面声波装置包括由机电系数为约15%以上的由LiT 3 O 3或LiNbO 3 3制成的压电基板,至少一个电极设置在 压电基板,其是具有金属层的层压膜,该金属层限定主要由密度高于Al的金属或金属和金属层的合金的主金属层构成的金属层,所述金属层与层叠在所述主金属层上的金属层的合金, 由另一种金属和第一SiO 2层构成,第一SiO 2层设置在除了至少一个电极所位于的其余区域之外的其余区域中,并且具有与电极的厚度大致相等的厚度 。 在上述表面声波装置中,电极的密度为第一SiO 2层的密度的至少约1.5倍。 此外,设置成覆盖电极和第一SiO 2层的第二SiO 2层和设置在第二SiO 2层上的氮化硅化合物层 进一步提供层。

    SURFACE ACOUSTIC WAVE DEVICE
    2.
    发明申请
    SURFACE ACOUSTIC WAVE DEVICE 审中-公开
    表面声波设备

    公开(公告)号:US20080160178A1

    公开(公告)日:2008-07-03

    申请号:US11960074

    申请日:2007-12-19

    IPC分类号: H01L41/24 B05D5/12

    摘要: A surface acoustic wave device includes a piezoelectric substrate made of LiTaO3 or LiNbO3 having an electromechanical coefficient of about 15% or more, at least one electrode which is disposed on the piezoelectric substrate and which is a laminate film having a metal layer defining a primary metal layer primarily composed of a metal having a density higher than that of Al or an alloy of the metal and a metal layer which is laminated on the primary metal layer and which is composed of another metal, and a first SiO2 layer which is disposed in a remaining area other than that at which the at least one electrode is located and which has a thickness approximately equivalent to that of the electrode. In the surface acoustic wave device described above, the density of the electrode is at least about 1.5 times that of the first SiO2 layer. In addition, a second SiO2 layer disposed so as to cover the electrode and the first SiO2 layer and a silicon nitride compound layer disposed on the second SiO2 layer are further provided.

    摘要翻译: 表面声波装置包括由机电系数为约15%以上的由LiT 3 O 3或LiNbO 3 3制成的压电基板,至少一个电极设置在 压电基板,其是具有金属层的层压膜,该金属层限定主要由密度高于Al的金属或金属和金属层的合金的主金属层构成的金属层,所述金属层与层叠在所述主金属层上的金属层的合金, 由另一种金属和第一SiO 2层构成,第一SiO 2层设置在除了至少一个电极所位于的其余区域之外的其余区域中,并且具有与电极的厚度大致相等的厚度 。 在上述表面声波装置中,电极的密度为第一SiO 2层的密度的至少约1.5倍。 此外,设置成覆盖电极和第一SiO 2层的第二SiO 2层和设置在第二SiO 2层上的氮化硅化合物层 进一步提供层。