公开(公告)号：US08677582B2

公开(公告)日：2014-03-25

申请号：US12706051

申请日：2010-02-16

Applicant: Shunsuke Kido ,  Takeshi Nakao ,  Yasuharu Nakai ,  Kenji Nishiyama ,  Michio Kadota

Inventor： Shunsuke Kido ,  Takeshi Nakao ,  Yasuharu Nakai ,  Kenji Nishiyama ,  Michio Kadota

IPC: H03H3/04

CPC classification number: H03H9/02834 ,  H03H3/10 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155 ,  Y10T29/49165

Abstract: A method for fabricating an acoustic wave device includes the steps of forming an insulating material layer on a piezoelectric substrate, forming a patterned photoresist on the insulating material layer, patterning the insulating material layer, and forming a piezoelectric-substrate exposed depression corresponding to a region where an interdigital transducer electrode is to be formed on a first insulator layer composed of the insulating material layer, depositing a metallic material on the piezoelectric substrate to form the interdigital transducer electrode in the piezoelectric-substrate exposed depression such that the overall interdigital transducer electrode is thinner than the first insulator layer and coating the photoresist with a metallic material, removing the photoresist and the metallic material on the photoresist, and depositing a second insulator layer so as to cover the interdigital transducer electrode and the first insulator layer.

Abstract translation: 一种制造声波器件的方法包括以下步骤：在压电衬底上形成绝缘材料层，在绝缘材料层上形成图案化的光致抗蚀剂，图案化绝缘材料层，形成压电衬底暴露的与区域相对应的凹陷 其中在由绝缘材料层构成的第一绝缘体层上形成叉指式换能器电极，在压电基板上沉积金属材料，以在压电基板暴露的凹陷中形成叉指式换能器电极，使得整个叉指式换能器电极为 比第一绝缘体层薄，并用金属材料涂覆光致抗蚀剂，去除光致抗蚀剂上的光致抗蚀剂和金属材料，并沉积第二绝缘体层以覆盖叉指式换能器电极和第一绝缘体层。

公开(公告)号：US08658097B2

公开(公告)日：2014-02-25

申请号：US12273569

申请日：2008-11-19

Applicant: Kenjiro Okaguchi ,  Takuo Hada ,  Michio Kadota

Inventor： Kenjiro Okaguchi ,  Takuo Hada ,  Michio Kadota

IPC: G01N15/06 ,  G01N21/75

CPC classification number: G01N29/022 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0423

Abstract: A sensor for detecting a substance in liquid includes a sensing circuit including a sensing surface acoustic wave (SAW) element in which a reaction film to react with a substance in liquid, a reference circuit including a reference SAW element including an IDT and not including a reaction film, a first signal source driving the sensing circuit, a second signal source driving the reference circuit and being independent of the first signal source, and a differential circuit arranged to output a differential output between an output of the sensing circuit and an output of the reference circuit. The frequency of a first frequency signal output from the first signal source is different from the frequency of a second frequency signal output from the second signal source, thereby making a driving frequency for the sensing SAW element and a driving frequency for the reference SAW element substantially the same as or different from one another.

Abstract translation: 用于检测液体中的物质的传感器包括感测电路，其包括感测声表面波（SAW）元件，其中反应膜与液体中的物质反应，参考电路包括包括IDT的参考SAW元件，并且不包括 反应膜，驱动感测电路的第一信号源，驱动参考电路并独立于第一信号源的第二信号源，以及差分电路，布置成在感测电路的输出和输出之间输出差分输出 参考电路。 从第一信号源输出的第一频率信号的频率与从第二信号源输出的第二频率信号的频率不同，从而使感测用SAW元件的驱动频率和基准SAW元件的驱动频率基本上 彼此相同或不同。

公开(公告)号：US20120286900A1

公开(公告)日：2012-11-15

申请号：US13555462

申请日：2012-07-23

Applicant: Michio KADOTA ,  Hideaki KOBAYASHI ,  Takashi OGAMI

Inventor： Michio KADOTA ,  Hideaki KOBAYASHI ,  Takashi OGAMI

IPC: H03H9/54 ,  H03H9/64

CPC classification number: H03H9/6403 ,  H03H7/12 ,  H03H7/1708 ,  H03H7/175 ,  H03H7/38 ,  H03H9/02559 ,  H03H9/0542 ,  H03H9/542 ,  H03H9/6483 ,  H03H2007/386 ,  H03H2009/02204

Abstract: A tunable filter that is capable of magnifying a pass band width or increasing a frequency variable amount includes a resonator circuit portion provided in at least one of a series arm connecting an input terminal and an output terminal to each other and a parallel arm connecting the series arm and a ground potential to each other, a first variable capacitor is connected in series to the resonator circuit portion and a second variable capacitor is connected in parallel to the resonator circuit portion. The resonator circuit portion includes a piezoelectric substrate including LiNbO3 or LiTaO3, an elastic wave resonator including an electrode located on the piezoelectric substrate, and a bandwidth extending inductance Lx, Lx connected to the elastic wave resonator.

Abstract translation: 能够放大通带宽度或增加频率可变量的可调谐滤波器包括设置在将输入端子和输出端子彼此连接的串联臂中的至少一个中的谐振器电路部分和连接该串联的并联臂 臂和接地电位，第一可变电容器串联连接到谐振器电路部分，并且第二可变电容器并联连接到谐振器电路部分。 谐振器电路部分包括包含LiNbO 3或LiTaO 3的压电基片，包括位于压电基片上的电极的弹性波谐振器和连接到弹性波谐振器的带宽延伸电感Lx，Lx。

公开(公告)号：US08305163B2

公开(公告)日：2012-11-06

申请号：US13096026

申请日：2011-04-28

Applicant: Michio Kadota

Inventor： Michio Kadota

IPC: H03H9/64

CPC classification number: H03H9/02834 ,  H03H9/02653 ,  H03H9/25 ,  H03H9/6403 ,  H03H9/6483

Abstract: A tunable filter includes a surface acoustic wave resonator, in which an IDT electrode is defined by an electrode material provided in a recess in an upper surface of a piezoelectric substrate made of LiNbO3 or LiTaO3, and a ZnO film is arranged to cover the upper surface of the piezoelectric substrate, and variable capacitors connected with the surface acoustic wave resonator.

Abstract translation: 可调滤波器包括表面声波谐振器，其中IDT电极由设置在由LiNbO 3或LiTaO 3制成的压电基板的上表面的凹部中的电极材料限定，并且ZnO膜被布置成覆盖上表面 的压电基板和与表面声波谐振器连接的可变电容器。

公开(公告)号：US08304959B2

公开(公告)日：2012-11-06

申请号：US13424462

申请日：2012-03-20

Applicant: Michio Kadota

Inventor： Michio Kadota

IPC: H01L41/08

CPC classification number: H03H9/02574 ,  H03H9/02559

Abstract: A surface acoustic wave device includes a piezoelectric substrate including an R-plane, a-plane, or m-plane sapphire substrate and a LiNbO3 film of (90°, 90°, −15° to 15°) or (0°, 90°, −15° to 15°) in terms of Euler angles (φ, θ, Ψ) disposed on the sapphire substrate, and electrodes disposed on the piezoelectric substrate and made of metal.

Abstract translation: 表面声波装置包括：包括R平面，a面或m面蓝宝石衬底和（90°，90°，-15°至15°）或（0°，90°）的LiNbO 3膜的压电衬底 设置在蓝宝石衬底上的欧拉角（＆Phgr;＆amp;Θ;Ψ），以及设置在压电衬底上并由金属制成的电极。

公开(公告)号：US20110241481A1

公开(公告)日：2011-10-06

申请号：US13161029

申请日：2011-06-15

Applicant: Tetsuya KIMURA ,  Michio KADOTA

Inventor： Tetsuya KIMURA ,  Michio KADOTA

IPC: H01L41/047

CPC classification number: H03H9/02559 ,  H03H9/14541

Abstract: A surface acoustic wave device has a large electromechanical coupling coefficient, a low insertion loss, and high resistance to static electricity. In the surface acoustic wave device, a piezoelectric substance includes a plurality of grooves. Each electrode finger of an IDT electrode includes a first electrode layer disposed in the grooves and a second electrode layer disposed on the first electrode layer and located at a position higher than the upper opening of the grooves. In a surface acoustic wave device, the one-half power of the product of the cube of the average density (ρa) of the first electrode layer and the average stiffness (C44a) of the first electrode layer [(ρa3×C44a)1/2] is larger than the one-half power of the product of the cube of the average density (ρb) of the second electrode layer and the average stiffness (C44b) of the second electrode layer [(ρb3×C44b)1/2].

Abstract translation: 表面声波器件具有大的机电耦合系数，低插入损耗和高抗静电能力。 在声表面波装置中，压电体包括多个槽。 IDT电极的每个电极指包括设置在槽中的第一电极层和设置在第一电极层上并位于比槽的上开口高的位置的第二电极层。 在声表面波装置中，第一电极层的平均密度（μr）和立方体的乘积的二次幂与第一电极层的平均刚度（C44a）[（＆rgr; a3× C44a）1/2]大于第二电极层的平均密度（＆rgr; b）的立方体的乘积的半功率和第二电极层的平均刚度（C44b）[（＆rgr; b3×C44b）1/2]。

公开(公告)号：US20110199168A1

公开(公告)日：2011-08-18

申请号：US13096019

申请日：2011-04-28

Applicant: Michio KADOTA

Inventor： Michio KADOTA

IPC: H03H9/15

CPC classification number: H03H9/6403 ,  H03H9/02559 ,  H03H9/542

Abstract: A tunable filter includes a circuit configuration in which variable capacitors are connected with surface acoustic wave resonators. The surface acoustic wave resonators each include a piezoelectric substrate made of LiTaO3 or LiNbO3, an IDT electrode made of an electrode material filled in a recess in an upper surface of the piezoelectric substrate, and a SiO2 film arranged to cover the piezoelectric substrate.

Abstract translation: 可调谐滤波器包括其中可变电容器与表面声波谐振器连接的电路配置。 表面声波谐振器各自包括由LiTaO 3或LiNbO 3制成的压电基板，由填充在压电基板的上表面中的凹部中的电极材料制成的IDT电极和布置成覆盖压电基板的SiO 2膜。

公开(公告)号：US20090272193A1

公开(公告)日：2009-11-05

申请号：US12505571

申请日：2009-07-20

Applicant: Kenjiro OKAGUCHI ,  Michio KADOTA ,  Koji FUJIMOTO

Inventor： Kenjiro OKAGUCHI ,  Michio KADOTA ,  Koji FUJIMOTO

IPC: G01N29/036 ,  H01L41/04

CPC classification number: G01N29/022 ,  G01N5/02 ,  G01N29/036 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0423

Abstract: A surface acoustic wave sensor detects a mass load on a resonator-type surface acoustic wave filter on the basis of a change in frequency and includes an IDT electrode arranged on a piezoelectric substrate to excite surface waves, an insulating film arranged so as to cover the IDT electrode, and a reaction film which is disposed on the insulating film and which reacts with a target substance to be detected or a binding substance that binds to a target substance to be detected. The reaction film is composed of a metal or a metal oxide.

Abstract translation: 表面声波传感器基于频率变化来检测谐振器型表面声波滤波器的质量负载，并且包括布置在压电基板上以激发表面波的IDT电极，布置成覆盖 IDT电极和设置在绝缘膜上并与待检测的目标物质或与要检测的目标物质结合的结合物质的反应膜。 反应膜由金属或金属氧化物构成。

公开(公告)号：US20090237181A1

公开(公告)日：2009-09-24

申请号：US12477282

申请日：2009-06-03

Applicant: Michio KADOTA

Inventor： Michio KADOTA

IPC: H03H9/25

CPC classification number: H03H9/145 ,  H03H9/02551 ,  H03H9/02574 ,  H03H9/02834

Abstract: A surface acoustic wave device which uses a Rayleigh wave as a surface acoustic wave includes an IDT electrode provided on a piezoelectric substrate composed of quartz having Euler angles of (0°±5°, 0° to 140°, 0°±40°), a piezoelectric film composed of c-axis oriented ZnO arranged so as to cover the IDT electrode, and the piezoelectric film has a convex portion provided on a surface thereof corresponding to the thickness of the ID electrode. The IDT electrode is composed of a metal material primarily including Al, Au, Ta, W, Pt, Cu, Ni, or Mo, and when the wavelength of the surface acoustic wave is represented by λ, the primary metal of the IDT electrode, a normalized thickness of the IDT electrode normalized by the wavelength of the surface acoustic wave, and a normalized thickness of the piezoelectric film normalized by the wavelength of the surface acoustic wave are preferably set within the ranges of each combination shown in Table 1.

Abstract translation: 使用瑞利波作为声表面波的表面声波装置包括设置在由欧米角（0°±5°，0°〜140°，0°±40°）的石英构成的压电基板上的IDT电极， 由以c轴取向的ZnO构成的压电膜，以覆盖IDT电极的方式配置，压电膜具有设置在与ID电极的厚度对应的面的凸部。 IDT电极由主要包括Al，Au，Ta，W，Pt，Cu，Ni或Mo的金属材料构成，并且当声表面波的波长由λ表示时，IDT电极的主金属， 通过表面声波的波长标准化的IDT电极的归一化厚度和由表面声波的波长归一化的压电膜的归一化厚度优选设定在表1所示的各组合的范围内。

公开(公告)号：US20090113997A1

公开(公告)日：2009-05-07

申请号：US12273657

申请日：2008-11-19

Applicant: Kenjiro OKAGUCHI ,  Takuo HADA ,  Michio KADOTA

Inventor： Kenjiro OKAGUCHI ,  Takuo HADA ,  Michio KADOTA

IPC: G01N29/02

CPC classification number: G01N29/022 ,  G01N2291/014 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0423 ,  G01N2291/0425

Abstract: A sensor for detecting a substance in liquid includes a sensing oscillation circuit and a reference oscillation circuit. The sensing oscillation circuit includes a sensing SAW element in which a reaction film arranged so as to cover at least one IDT and to react with a substance in liquid is disposed and a first amplifier circuit. The reference oscillation circuit includes a reference SAW element and a second amplifier circuit. The reference SAW element includes at least one IDT and no reaction film. The oscillation frequency of the sensing oscillation circuit and the oscillation frequency of the reference oscillation circuit are separated by at least about 200×k2 (ppm), where k2 (%) is the electromechanical coupling coefficient of a piezoelectric substrate used in each of the sensing SAW element and the reference SAW element.

Abstract translation: 用于检测液体中的物质的传感器包括感测振荡电路和参考振荡电路。 感测振荡电路包括感测SAW元件，其中布置成覆盖至少一个IDT并与液体中的物质反应的反应膜和第一放大器电路。 参考振荡电路包括参考SAW元件和第二放大器电路。 参考SAW元件包括至少一个IDT并且没有反应膜。 感测振荡电路的振荡频率和参考振荡电路的振荡频率分开至少约200xk2（ppm），其中k2（％）是在每个感测SAW元件中使用的压电基板的机电耦合系数 和参考SAW元件。