公开(公告)号：US4910041A

公开(公告)日：1990-03-20

申请号：US242263

申请日：1988-09-09

申请人： Kenji Yanagihara ,  Mituo Kimura ,  Hitoshi Chawanya ,  Koshi Numata

发明人： Kenji Yanagihara ,  Mituo Kimura ,  Hitoshi Chawanya ,  Koshi Numata

IPC分类号： C23C16/511 ,  H01J37/32

CPC分类号： H01J37/32009 ,  C23C16/511

摘要： A process of forming a film on a substrate, which comprises bringing a substrate into contact with a plasma zone formed by generating, by use of a discharge electrode or discharge electrodes, high temperature or quasi-high temperature plasma of a gas containing at least one carbon containing compound,wherein said electrode comprises a sheet-like electrode provided with a slit having a linear portion and connected to a microwave electric source; orwherein said plasma zone is formed by forcing a high temperature or quasi-high temperature plasma generated in an arc between said electrodes by DC discharge, to move by applying a magnetic field. The process enables formation of films on substrate surfaces in a high energy efficiency.

摘要翻译： 一种在基板上形成膜的工艺，其包括使基板与通过使用放电电极或放电电极产生的等离子体区形成的含有至少一个的气体的高温或准高温等离子体接触 含碳化合物，其中所述电极包括具有直线部分并连接到微波电源的狭缝的片状电极; 或者其中所述等离子体区域是通过强迫通过DC放电在所述电极之间的电弧中产生的高温或准高温等离子体而形成的，以通过施加磁场来移动。 该方法能够以高能量效率在衬底表面上形成膜。