公开(公告)号：US5509974A

公开(公告)日：1996-04-23

申请号：US434153

申请日：1995-05-02

申请人： Kenneth M. Hays

发明人： Kenneth M. Hays

IPC分类号： C23F1/00 ,  B81C1/00 ,  G01L9/00 ,  H01L21/306 ,  H03H3/007 ,  H01L29/12

CPC分类号： G01L9/0019 ,  B81C1/00801 ,  H03H3/007 ,  B81C2201/0136 ,  B81C2201/014 ,  Y10S148/012

摘要： A dissolved wafer process is modified by providing an etch control seal around the perimeter of an etch resistant microstructure, such as a micromechanical or microelectromechanical device, formed on a first substrate. The microstructure is defined and shaped by a surrounding trench in the first substrate. Selected areas of the microstructure and the first substrate are bonded to an etch resistant second substrate. The selected bonding areas may comprise raised areas of the first substrate, or raised areas of the second substrate corresponding to the selected bonding areas of the first substrate. A bonded area forming a ring extending around the perimeter of the microstructure and its defining trench forms an etch control seal. The first substrate of the bonded assembly is dissolved in a selective etch so that the etch resistant microstructure remains attached to the second substrate only at the bonded areas. The etch control seal reduces exposure of the microstructure to the etch by preventing the etch from contacting the microstructure until the etch leaks through the dissolving floor of the trench. This occurs only during the final stages of the wafer dissolution step, thus minimizing exposure of the microstructure to the damaging effects of the etch.

摘要翻译： 通过在第一衬底上形成的耐蚀刻微结构（例如微机电或微机电装置）的周边周围提供蚀刻控制密封来改变溶解的晶片工艺。 微结构由第一衬底中的周围沟槽限定和成形。 将微结构和第一衬底的选定区域结合到耐蚀刻的第二衬底上。 所选择的结合区域可以包括第一衬底的凸起区域或者对应于第一衬底的所选择的结合区域的第二衬底的凸起区域。 形成围绕微结构周边延伸的环的结合区及其限定沟槽形成蚀刻控制密封。 粘合组件的第一衬底被溶解在选择性蚀刻中，使得耐蚀刻微结构仅在接合区域处附着到第二衬底。 蚀刻控制密封件通过防止蚀刻与微结构接触直到蚀刻泄漏通过沟槽的溶解底板来减少微结构暴露于蚀刻。 这仅发生在晶片溶解步骤的最后阶段期间，从而最小化微观结构暴露于蚀刻的破坏作用。

公开(公告)号：US5866469A

公开(公告)日：1999-02-02

申请号：US662390

申请日：1996-06-13

申请人： Kenneth M. Hays

发明人： Kenneth M. Hays

IPC分类号： B81B7/00 ,  B81C1/00 ,  H01L21/46

CPC分类号： B81C1/00269 ,  B81C2203/0109 ,  B81C2203/031 ,  Y10S148/012

摘要： A process is provided for protecting, containing, and/or completing fragile microelectronic and microelectromechanical (MEM) structures on a low conductivity substrate during anodic wafer bonding of a covering wafer. The wafer includes raised areas that contact the substrate at selected bonding regions to support the wafer as a covering structure over the substrate. The covering wafer includes additional raised areas, such as pillars or posts, that contact selected electric circuit lines on the substrate to form temporary shorts through the wafer. During anodic bonding of the wafer to the substrate, the temporary shorts maintain the connected circuit lines and microstructures at nearly the same electric potential to prevent unwanted arcing and electrostatic forces that could damage the fragile structures. The pillars or posts can be formed at the same time as the raised bonding areas, but on unwanted and otherwise unused portions of the covering wafer. Anodic bonding produces only weak bonds between the wafer posts and the metallic conductor material of the circuit lines. After anodic bonding, the unwanted portions of the covering wafer can be removed to leave covering structures over the selected microstructures. Because of the weak bonds, removal of the unwanted portions of the wafer also removes the posts and eliminates the temporary shorts, with no additional processing needed to electrically separate the circuit lines on the substrate.

摘要翻译： 提供了一种用于在覆盖晶片的阳极晶片接合期间在低电导率衬底上保护，容纳和/或完成易碎微电子和微机电（MEM）结构的方法。 晶片包括在所选择的接合区域接触衬底的凸起区域，以将晶片支撑在衬底上作为覆盖结构。 覆盖晶片包括与衬底上的选定电路线接触的另外的凸起区域，例如柱或柱，以形成穿过晶片的临时短路。 在晶片与衬底的阳极接合期间，临时短路将连接的电路线和微结构保持在几乎相同的电位，以防止可能损坏脆弱结构的不期望的电弧和静电力。 支柱或支柱可以与凸起的粘合区域同时形成，但可以在覆盖晶片的不需要的和未使用的部分上形成。 阳极结合仅在晶片柱和电路线的金属导体材料之间产生弱键。 在阳极接合之后，可以去除覆盖晶片的不需要的部分以将覆盖结构留在所选择的微结构上。 由于弱键，去除晶片的不想要的部分也移除柱并消除临时短路，而不需要额外的处理来电分离衬底上的电路线。

公开(公告)号：US5437739A

公开(公告)日：1995-08-01

申请号：US229501

申请日：1994-04-19

申请人： Kenneth M. Hays

发明人： Kenneth M. Hays

IPC分类号： C23F1/00 ,  B81C1/00 ,  G01L9/00 ,  H01L21/306 ,  H03H3/007 ,  H01L21/302

CPC分类号： G01L9/0019 ,  B81C1/00801 ,  H03H3/007 ,  B81C2201/0136 ,  B81C2201/014 ,  Y10S148/012

摘要： A dissolved wafer micromachining process is modified by providing an etch control seal around the perimeter of a heavily doped micromechanical structure formed on a substrate. The micromechanical structure is fabricated on a wafer using conventional methods including the formation of a trench that surrounds and defines the shape of the micromechanical structure in the substrate. The etch control seal comprises a portion of the substrate in the form of a raised ring extending around the perimeter of the micromechanical structure and its defining trench. Selected raised areas of the heavily doped micromechanical structure and the top of the raised etch control seal are bonded to a second substrate. A selective etch is then used to dissolve the first substrate so that the heavily doped micromechanical structure remains attached to the second substrate only at the bonded areas. The etch control seal reduces exposure of the micromechanical structure and bonded areas to the etch by preventing the etch from contacting the heavily doped structure until the etch leaks through the dissolving floor of the trench. This occurs only during the final stages of the substrate dissolution step, thus minimizing exposure of the micromechanical structure and bonded areas to the damaging effects of the etch. Use of an etch control seal increases design flexibility and improves micromechanical device yield and quality in a dissolved wafer fabrication process.

摘要翻译： 通过在形成在衬底上的重掺杂微机械结构的周边周围提供蚀刻控制密封来修改溶解的晶片微加工工艺。 使用常规方法在晶片上制造微机械结构，包括形成围绕并限定衬底中的微机械结构的形状的沟槽。 蚀刻控制密封件包括呈微环形结构周边延伸的凸起形状的衬底的一部分及其限定沟槽。 重掺杂的微机械结构的选定凸起区域和凸起的蚀刻控制密封件的顶部被结合到第二衬底。 然后使用选择性蚀刻来溶解第一衬底，使得重掺杂的微机械结构仅在接合区域处保持附着到第二衬底。 蚀刻控制密封件通过防止蚀刻与重掺杂结构接触直到蚀刻泄漏通过沟槽的溶解底板来减少微机械结构和结合区域对蚀刻的暴露。 这仅发生在底物溶解步骤的最后阶段期间，从而最小化微机械结构和结合区域对蚀刻的破坏作用的暴露。 蚀刻控制密封件的使用增加了设计灵活性，并且在溶解的晶片制造工艺中提高了微机械装置的产量和质量。

公开(公告)号：US06734404B2

公开(公告)日：2004-05-11

申请号：US10103552

申请日：2002-03-21

申请人： Kenneth M. Hays

发明人： Kenneth M. Hays

IPC分类号： H05B300

CPC分类号： H05B3/56

摘要： A wire-based heating element is provided having first and second portions twisted about each other such that magnetic flux emitted from one portion is substantially cancelled by magnetic flux emitted from the other portion. A bonding material that fixedly connects the two portions of the heating element and restricts their movement relative to each other to thereby maximize the cancellation of magnetic flux. A substrate-based heating element is also provided having traces on opposed sides of a substrate and overlying each other to cancel magnetic flux. Electrical connection pads are located on the same side of the substrate, and the second trace extends passed the first trace to connect to the second connection pad. A lead connected to the first connection pad overlies the portion of the second trace that extends to the second connection pad to thereby cancel magnetic flux emissions from this portion of the second trace.

摘要翻译： 提供了一种线基加热元件，其具有第一和第二部分彼此扭曲，使得从一个部分发射的磁通基本上被从另一部分发射的磁通消除。 一种粘合材料，其固定地连接加热元件的两个部分并限制它们相对于彼此的移动，从而最大限度地消除磁通量。 还提供了一种基板型加热元件，其在基板的相对侧上具有迹线并且彼此叠置以抵消磁通量。 电连接焊盘位于基板的同一侧，第二迹线延伸通过第一迹线以连接到第二连接焊盘。 连接到第一连接焊盘的引线覆盖延伸到第二连接焊盘的第二迹线的部分，从而抵消来自第二迹线的该部分的磁通量发射。