公开(公告)号：US4619798A

公开(公告)日：1986-10-28

申请号：US685800

申请日：1984-12-24

申请人： Takashi Tanaka ,  Kenro Hayashi

发明人： Takashi Tanaka ,  Kenro Hayashi

IPC分类号： C04B35/565 ,  C04B41/50 ,  C04B41/87 ,  C30B31/10 ,  C30B35/00 ,  H01L21/22 ,  C04B41/53

CPC分类号： C04B41/009 ,  C04B35/565 ,  C04B41/5059 ,  C04B41/87 ,  C30B31/10 ,  C30B35/002

摘要： A method of manufacturing extremely high purity parts for use to the heating furnace comprising adding a sintering assistant of 0.5-2.0 weight % and a binder, to SiC powder which has an average particle diameter of 2 .mu.m or less, and molding it to a predetermined form; applying the purification treatment to this molded body by placing it in the 800.degree.-1,300.degree. C. atmosphere of a gas which is selected from a group consisting of halogen gas and hydrogen halide; degassing the purified molded body in vacuum under a temperature higher than that employed at the purification treatment; sintering the degassed molded body, and coating an SiC film on at least part of the sintered body according to the chemical vapor deposition.

摘要翻译： 一种制造用于加热炉的极高纯度部件的方法，包括向平均粒径为2μm以下的SiC粉末中添加0.5〜2.0重量％的烧结助剂和粘合剂，并将其成型为 预定形式; 将该净化处理物置于800℃-1,300℃的气氛中，该气体选自卤素气体和卤化氢; 在高于纯化处理所用温度的真空中对纯化的成型体进行脱气; 烧结脱气成型体，并根据化学气相沉积在至少部分烧结体上涂覆SiC膜。

公开(公告)号：US4836965A

公开(公告)日：1989-06-06

申请号：US97344

申请日：1987-09-08

申请人： Kenro Hayashi ,  Takashi Tanaka

发明人： Kenro Hayashi ,  Takashi Tanaka

IPC分类号： C04B35/573

CPC分类号： C04B35/573

摘要： A method of producing a high density and high strength silicon carbide member for a heat treatment furnace to be used in the manufacture of a semiconductor device. In this method, SiC powder, carbon powder, deflocculating agent and water are mixed to form a slip. Then the slip is formed into a desired shape, cured under a nonoxidizing atmosphere, and removed of any impurity contained in the shaped body. Finally, the shaped body is immersed in a molten silicon to convert the carbon in the shaped body into silicon carbide.

摘要翻译： 一种用于制造半导体器件的用于热处理炉的高密度和高强度碳化硅构件的方法。 在该方法中，将SiC粉末，碳粉，抗絮凝剂和水混合形成滑移。 然后将滑移形成为期望的形状，在非氧化气氛下固化，并除去成形体中所含的任何杂质。 最后，将成形体浸入熔融硅中，将成形体中的碳转化为碳化硅。

公开(公告)号：US4753763A

公开(公告)日：1988-06-28

申请号：US685844

申请日：1984-12-24

申请人： Takashi Tanaka ,  Kenro Hayashi

发明人： Takashi Tanaka ,  Kenro Hayashi

IPC分类号： C04B35/565 ,  C04B35/573 ,  C04B35/626 ,  C30B31/10 ,  H01L21/22 ,  C04B41/53

CPC分类号： C30B31/10 ,  C04B35/565 ,  C04B35/573

摘要： A method of manufacturing heating furnace parts having high purity which comprises the steps of molding a raw powder mainly consisting of silicon carbide powder into a prescribed form, and subjecting the molded product to a purification treatment at a temperature ranging between 1,500.degree. and 2,100.degree. C. in an atmosphere containing a gas selected from the group consisting of halogen gas and hydrogen halide gas, and an inert gas applied as a carrier gas.

摘要翻译： 一种制造高纯度的加热炉部件的方法，包括以下步骤：将主要由碳化硅粉末组成的原料粉末成型为规定形式，并在1500-2100℃的温度范围内对成型产品进行净化处理 在含有选自卤素气体和卤化氢气体的气体的气氛中，以及作为载气施加的惰性气体。

公开(公告)号：US5788763A

公开(公告)日：1998-08-04

申请号：US612214

申请日：1996-03-07

申请人： Kenro Hayashi ,  Ryuji Takeda ,  Katsuhiro Chaki ,  Ping Xin ,  Jun Yoshikawa ,  Hiroyuki Saito

发明人： Kenro Hayashi ,  Ryuji Takeda ,  Katsuhiro Chaki ,  Ping Xin ,  Jun Yoshikawa ,  Hiroyuki Saito

IPC分类号： C30B15/00 ,  C30B33/00 ,  H01L21/322 ,  C30B25/02

CPC分类号： C30B29/06 ,  C30B15/206 ,  C30B33/00 ,  H01L21/3225

摘要： In a heat history initializing step, a heat treatment in performed in an atmosphere including at least one of hydrogen, helium, and argon while the temperature is increased in a range of 700.degree. C. to 1,000.degree. C. at a rate of 15.degree.-1,000.degree. C./min. In a controlled nuclei growing step, a heat treatment is performed in the above atmosphere while the temperature is kept constant in a range of 850.degree. C. to 980.degree. C. for 0.5-60 minutes.

摘要翻译： 在热历史初始化步骤中，在包括氢，氦和氩中的至少一种的气氛中进行热处理，同时温度在70℃至1000℃的范围内以15℃的速度增加 -1000℃/分钟。 在受控核生长步骤中，在上述气氛中进行热处理，同时将温度保持在850℃至980℃的范围内恒定0.5-60分钟。