公开(公告)号：US20090081874A1

公开(公告)日：2009-03-26

申请号：US12234202

申请日：2008-09-19

申请人： Kevin S. Cook ,  Dennis Manning ,  Edward K. McIntyre ,  Richard Goldberg

发明人： Kevin S. Cook ,  Dennis Manning ,  Edward K. McIntyre ,  Richard Goldberg

IPC分类号： H01L21/302

CPC分类号： B08B7/0035 ,  C23C14/48 ,  C23C14/564

摘要： The invention features in-situ cleaning process for an ion source and associated extraction electrodes and similar components of the ion-beam producing system, which chemically removes carbon deposits, increasing service lifetime and performance, without the need to disassemble the system. In particular, an aspect of the invention is directed to an activating, catalytic, or reaction promoting species added to the reactive species to effectively convert the non-volatile molecular residue into a volatile species which can be removed by conventional means.

摘要翻译： 本发明的特征在于离子源和相关联的提取电极和离子束产生系统的类似组分的原位清洁方法，其化学去除碳沉积物，增加使用寿命和性能，而不需要拆卸系统。 特别地，本发明的一个方面涉及添加到反应物种中的活化，催化或反应促进物质，以有效地将非挥发性分子残基转化成可通过常规方法除去的挥发性物质。

公开(公告)号：US07875125B2

公开(公告)日：2011-01-25

申请号：US12234202

申请日：2008-09-19

申请人： Kevin S. Cook ,  Dennis Manning ,  Edward K. McIntyre ,  Richard Goldberg

发明人： Kevin S. Cook ,  Dennis Manning ,  Edward K. McIntyre ,  Richard Goldberg

IPC分类号： B08B5/00

CPC分类号： B08B7/0035 ,  C23C14/48 ,  C23C14/564

摘要： The invention features in-situ cleaning process for an ion source and associated extraction electrodes and similar components of the ion-beam producing system, which chemically removes carbon deposits, increasing service lifetime and performance, without the need to disassemble the system. In particular, an aspect of the invention is directed to an activating, catalytic, or reaction promoting species added to the reactive species to effectively convert the non-volatile molecular residue into a volatile species which can be removed by conventional means.

摘要翻译： 本发明的特征在于离子源和相关联的提取电极和离子束产生系统的类似组分的原位清洁方法，其化学去除碳沉积物，增加使用寿命和性能，而不需要拆卸系统。 特别地，本发明的一个方面涉及添加到反应物种中的活化，催化或反应促进物质，以有效地将非挥发性分子残基转化成可通过常规方法除去的挥发性物质。

公开(公告)号：US20080223409A1

公开(公告)日：2008-09-18

申请号：US12105702

申请日：2008-04-18

申请人： Thomas N. Horsky ,  Dennis Manning ,  Kevin S. Cook

发明人： Thomas N. Horsky ,  Dennis Manning ,  Kevin S. Cook

IPC分类号： B08B5/00 ,  B08B13/00

CPC分类号： B08B7/00 ,  B08B7/0035 ,  C23C14/48 ,  C23C14/564 ,  H01J37/08 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/0827 ,  H01J2237/31705

摘要： An in situ cleaning system is disclosed for use with semiconductor processing equipment. In accordance with an important aspect of the invention, the cleaning system provides for dynamic cleaning of the semiconductor processing system by varying the pressure of the cleaning gas over time during a cleaning cycle. In particular, the cleaning gas is applied to the semiconductor processing system in repeated pressure cycles. Each pressure cycle begins with the pressure of the cleaning gas at PMIN. The pressure of the cleaning gas is increased to a maximum pressure PMAX during a fill portion of the pressure cycle and maintained for a dwell time selected to allow the available reactants to generate the desired end products. The pressure in the chamber to be cleaned is then reduced during a vent portion of the pressure cycle to permit venting of the reaction products. As such, each time the chamber to be filled is vented and re-filled, reaction products are removed and new reactants are introduced into the chamber to be cleaned, increasing the effective reaction rate.

摘要翻译： 公开了用于半导体处理设备的原位清洁系统。 根据本发明的重要方面，清洁系统通过在清洁循环期间随时间改变清洁气体的压力来提供半导体处理系统的动态清洁。 特别地，在重复的压力循环中将清洁气体施加到半导体处理系统。 每个压力循环开始于P＆lt; MIN＆lt; MIN＆gt;清洁气体的压力。 在压力循环的填充部分期间，清洁气体的压力增加到最大压力P MAX，并保持选定的停留时间，以允许可用的反应物产生所需的最终产物。 然后在压力循环的通气部分期间减少要清洁的室中的压力，以允许反应产物排气。 因此，每次要填充的室被排出并重新填充时，将反应产物除去并将新的反应物引入待清洁的室中，从而提高有效的反应速率。

公开(公告)号：US20080122005A1

公开(公告)日：2008-05-29

申请号：US11934873

申请日：2007-11-05

申请人： Thomas N. Horsky ,  Erin Dyker ,  Brian Bernstein ,  Dennis Manning

发明人： Thomas N. Horsky ,  Erin Dyker ,  Brian Bernstein ,  Dennis Manning

IPC分类号： H01L27/092 ,  H01L21/265 ,  H01L21/8238

CPC分类号： H01L21/823814 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823807 ,  H01L29/6659 ,  H01L29/7833

摘要： An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized phosphorus-containing molecular clusters are implanted to form N-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide N-type doping for Source and Drain structures and Pocket or Halo formation, and for counter-doping Poly gates. These doping steps are critical to the formation of NMOS transistors. The molecular cluster ions have the chemical form AnHx+, or AnRHx+, where n and x are integers with 4≦n, and x≧0, and A is either As or P, and R is a molecule not containing phosphorus or arsenic, which is not injurious to the implantation process. The use of such phosphorus or arsenic-containing clusters will provide a dramatic increase in wafer throughput, improved device performance, reduced cost per wafer, simplification in transistor formation, improved device yields through the reduction of wafer charging, and other benefits. Thus, this technology significantly reduces manufacturing costs relative to prior implantation techniques.

摘要翻译： 描述了离子注入装置和制造半导体器件的方法，其中注入离子化的含磷分子簇以形成N型晶体管结构。 例如，在互补金属氧化物半导体（CMOS）器件的制造中，注入簇以提供用于源极和漏极结构以及Pocket或Halo形成的N型掺杂，以及用于反掺杂Poly栅极。 这些掺杂步骤对于NMOS晶体管的形成至关重要。 分子簇离子具有化学形式AnHx 或AnRHx +，其中n和x是具有4≤n的整数，x> = 0，A是 As或P，R是不含磷或砷的分子，其不会对植入过程有害。 这种含磷或砷的簇的使用将提供晶片生产量的显着增加，器件性能的提高，每晶片的降低的成本，晶体管形成的简化，通过减少晶片充电提高的器件产量以及其他益处。 因此，相对于现有的植入技术，该技术显着地降低了制造成本。

公开(公告)号：US08586459B2

公开(公告)日：2013-11-19

申请号：US11934873

申请日：2007-11-05

申请人： Thomas N. Horsky ,  Erin Dyker ,  Brian Bernstein ,  Dennis Manning

发明人： Thomas N. Horsky ,  Erin Dyker ,  Brian Bernstein ,  Dennis Manning

IPC分类号： H01L21/265 ,  H01L21/8238 ,  H01L27/092

CPC分类号： H01L21/823814 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823807 ,  H01L29/6659 ,  H01L29/7833

摘要： An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized phosphorus-containing molecular clusters are implanted to form N-type transistor structures. The clusters are implanted to provide N-type doping for Source and Drain structures and Pocket or Halo formation, and for counter-doping Poly gates. These doping steps are critical to the formation of NMOS transistors. The molecular cluster ions have the chemical form AnHx+, or AnRHx+, where n and x are integers with 4

摘要翻译： 描述了离子注入装置和制造半导体器件的方法，其中注入离子化的含磷分子簇以形成N型晶体管结构。 这些簇被植入以提供用于源极和漏极结构以及Pocket或Halo形成的N型掺杂以及用于反向掺杂的Poly栅极。 这些掺杂步骤对于NMOS晶体管的形成至关重要。 分子簇离子具有化学形式AnHx +或AnRHx +，其中n和x是4 = 0的整数，A是As或P，R是不含磷或砷的分子， 不会影响植入过程。