公开(公告)号：US08586459B2

公开(公告)日：2013-11-19

申请号：US11934873

申请日：2007-11-05

申请人： Thomas N. Horsky ,  Erin Dyker ,  Brian Bernstein ,  Dennis Manning

发明人： Thomas N. Horsky ,  Erin Dyker ,  Brian Bernstein ,  Dennis Manning

IPC分类号： H01L21/265 ,  H01L21/8238 ,  H01L27/092

CPC分类号： H01L21/823814 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823807 ,  H01L29/6659 ,  H01L29/7833

摘要： An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized phosphorus-containing molecular clusters are implanted to form N-type transistor structures. The clusters are implanted to provide N-type doping for Source and Drain structures and Pocket or Halo formation, and for counter-doping Poly gates. These doping steps are critical to the formation of NMOS transistors. The molecular cluster ions have the chemical form AnHx+, or AnRHx+, where n and x are integers with 4

摘要翻译： 描述了离子注入装置和制造半导体器件的方法，其中注入离子化的含磷分子簇以形成N型晶体管结构。 这些簇被植入以提供用于源极和漏极结构以及Pocket或Halo形成的N型掺杂以及用于反向掺杂的Poly栅极。 这些掺杂步骤对于NMOS晶体管的形成至关重要。 分子簇离子具有化学形式AnHx +或AnRHx +，其中n和x是4 = 0的整数，A是As或P，R是不含磷或砷的分子， 不会影响植入过程。

公开(公告)号：US20080122005A1

公开(公告)日：2008-05-29

申请号：US11934873

申请日：2007-11-05

申请人： Thomas N. Horsky ,  Erin Dyker ,  Brian Bernstein ,  Dennis Manning

发明人： Thomas N. Horsky ,  Erin Dyker ,  Brian Bernstein ,  Dennis Manning

IPC分类号： H01L27/092 ,  H01L21/265 ,  H01L21/8238

CPC分类号： H01L21/823814 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823807 ,  H01L29/6659 ,  H01L29/7833

摘要： An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized phosphorus-containing molecular clusters are implanted to form N-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide N-type doping for Source and Drain structures and Pocket or Halo formation, and for counter-doping Poly gates. These doping steps are critical to the formation of NMOS transistors. The molecular cluster ions have the chemical form AnHx+, or AnRHx+, where n and x are integers with 4≦n, and x≧0, and A is either As or P, and R is a molecule not containing phosphorus or arsenic, which is not injurious to the implantation process. The use of such phosphorus or arsenic-containing clusters will provide a dramatic increase in wafer throughput, improved device performance, reduced cost per wafer, simplification in transistor formation, improved device yields through the reduction of wafer charging, and other benefits. Thus, this technology significantly reduces manufacturing costs relative to prior implantation techniques.

摘要翻译： 描述了离子注入装置和制造半导体器件的方法，其中注入离子化的含磷分子簇以形成N型晶体管结构。 例如，在互补金属氧化物半导体（CMOS）器件的制造中，注入簇以提供用于源极和漏极结构以及Pocket或Halo形成的N型掺杂，以及用于反掺杂Poly栅极。 这些掺杂步骤对于NMOS晶体管的形成至关重要。 分子簇离子具有化学形式AnHx 或AnRHx +，其中n和x是具有4≤n的整数，x> = 0，A是 As或P，R是不含磷或砷的分子，其不会对植入过程有害。 这种含磷或砷的簇的使用将提供晶片生产量的显着增加，器件性能的提高，每晶片的降低的成本，晶体管形成的简化，通过减少晶片充电提高的器件产量以及其他益处。 因此，相对于现有的植入技术，该技术显着地降低了制造成本。

公开(公告)号：US20080223409A1

公开(公告)日：2008-09-18

申请号：US12105702

申请日：2008-04-18

申请人： Thomas N. Horsky ,  Dennis Manning ,  Kevin S. Cook

发明人： Thomas N. Horsky ,  Dennis Manning ,  Kevin S. Cook

IPC分类号： B08B5/00 ,  B08B13/00

CPC分类号： B08B7/00 ,  B08B7/0035 ,  C23C14/48 ,  C23C14/564 ,  H01J37/08 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/0827 ,  H01J2237/31705

摘要： An in situ cleaning system is disclosed for use with semiconductor processing equipment. In accordance with an important aspect of the invention, the cleaning system provides for dynamic cleaning of the semiconductor processing system by varying the pressure of the cleaning gas over time during a cleaning cycle. In particular, the cleaning gas is applied to the semiconductor processing system in repeated pressure cycles. Each pressure cycle begins with the pressure of the cleaning gas at PMIN. The pressure of the cleaning gas is increased to a maximum pressure PMAX during a fill portion of the pressure cycle and maintained for a dwell time selected to allow the available reactants to generate the desired end products. The pressure in the chamber to be cleaned is then reduced during a vent portion of the pressure cycle to permit venting of the reaction products. As such, each time the chamber to be filled is vented and re-filled, reaction products are removed and new reactants are introduced into the chamber to be cleaned, increasing the effective reaction rate.

摘要翻译： 公开了用于半导体处理设备的原位清洁系统。 根据本发明的重要方面，清洁系统通过在清洁循环期间随时间改变清洁气体的压力来提供半导体处理系统的动态清洁。 特别地，在重复的压力循环中将清洁气体施加到半导体处理系统。 每个压力循环开始于P＆lt; MIN＆lt; MIN＆gt;清洁气体的压力。 在压力循环的填充部分期间，清洁气体的压力增加到最大压力P MAX，并保持选定的停留时间，以允许可用的反应物产生所需的最终产物。 然后在压力循环的通气部分期间减少要清洁的室中的压力，以允许反应产物排气。 因此，每次要填充的室被排出并重新填充时，将反应产物除去并将新的反应物引入待清洁的室中，从而提高有效的反应速率。

公开(公告)号：US08436326B2

公开(公告)日：2013-05-07

申请号：US12948298

申请日：2010-11-17

申请人： Hilton F. Glavish ,  Thomas N. Horsky ,  Dale C. Jacobson ,  Sami K. Hahto ,  Masao Naito ,  Nobuo Nagai ,  Nariaki Hamamoto

发明人： Hilton F. Glavish ,  Thomas N. Horsky ,  Dale C. Jacobson ,  Sami K. Hahto ,  Masao Naito ,  Nobuo Nagai ,  Nariaki Hamamoto

IPC分类号： H01J37/317 ,  H01J37/28 ,  H01L21/265

CPC分类号： H01J37/3171 ,  H01J37/05 ,  H01J37/09 ,  H01J2237/0044 ,  H01J2237/0455 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/057 ,  H01J2237/14 ,  H01J2237/30477 ,  H01J2237/31703 ,  H01L21/26513

摘要： A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.

摘要翻译： 一种多用途离子注入机束线配置，包括质量分析器磁体，随后是磁扫描器和磁准直器组合，其将弯曲引入到光束路径，所述束线被构造用于使得能够注入常见的单原子掺杂离子种类簇离子，所述束线配置具有 质量分析器磁体限定磁体的铁磁极之间的相当宽度的磁极间隙和质量选择孔，分析器磁体的尺寸设计成接受来自至少约80mm高度的槽形离子源提取孔的离子束，并且在 至少约7mm的宽度，并且在对应于梁的宽度的平面中的质量选择孔处产生分散体，质量选择孔能够被设定为质量选择宽度，该质量选择宽度的尺寸被选择为选择聚集离子的束 相同的掺杂物种类但递增不同的分子量，质量选择孔径也能够基本上被设定 较窄的质量选择宽度和具有质量选择孔径的分辨率的分析器磁体足以能够选择基本上单个原子或分子量的单原子掺杂离子束，磁扫描器和磁准直器被构造为连续弯曲离子 在相同意义上的光束，其与由光束线的分析器磁体引入的弯曲的方向相反。

公开(公告)号：US08097529B2

公开(公告)日：2012-01-17

申请号：US12508800

申请日：2009-07-24

申请人： Wade A. Krull ,  Thomas N. Horsky

发明人： Wade A. Krull ,  Thomas N. Horsky

IPC分类号： H01L21/425

CPC分类号： H01L21/26513 ,  H01L21/26506 ,  H01L21/26566 ,  H01L21/2658 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7848

摘要： A process is disclosed which incorporates implantation of a carbon cluster into a substrate to improve the characteristics of transistor junctions when the substrates are doped with Boron and Phosphorous in the manufacturing of PMOS transistor structures in integrated circuits. There are two processes which result from this novel approach: (1) diffusion control for USJ formation; and (2) high dose carbon implantation for stress engineering. Diffusion control for USJ formation is demonstrated in conjunction with a boron or shallow boron cluster implant of the source/drain structures in PMOS. More particularly, first, a cluster carbon ion, such as C16Hx+, is implanted into the source/drain region at approximately the same dose as the subsequent boron implant; followed by a shallow boron, boron cluster, phosphorous or phosphorous cluster ion implant to form the source/drain extensions, preferably using a borohydride cluster, such as B18Hx+ or B10Hx+. Upon subsequent annealing and activation, the boron diffusion is reduced, due to the gettering of interstitial defects by the carbon atoms.

摘要翻译： 公开了一种方法，其包括将碳簇植入衬底中，以便在集成电路中制造PMOS晶体管结构中衬底掺杂硼和磷时改善晶体管结的特性。 这种新方法有两个过程：（1）USJ形成的扩散控制; 和（2）应力工程的高剂量碳植入。 USJ形成的扩散控制结合PMOS中的源极/漏极结构的硼或浅硼簇注入来证明。 更具体地，首先，将簇碳离子（例如C 16 H x +）以与随后的硼注入剂大致相同的剂量注入源极/漏极区域; 随后是浅硼，硼簇，磷或磷簇离子注入以形成源极/漏极延伸，优选使用硼氢化簇，例如B18Hx +或B10Hx +。 随后的退火和活化，由于碳原子吸收间隙缺陷，硼扩散减少。

公开(公告)号：US08071958B2

公开(公告)日：2011-12-06

申请号：US12268524

申请日：2008-11-11

申请人： Thomas N. Horsky ,  Dale C. Jacobson

发明人： Thomas N. Horsky ,  Dale C. Jacobson

IPC分类号： H01J49/10 ,  H01J49/14 ,  H01J27/02

CPC分类号： H01L21/26513 ,  H01J27/20 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/304 ,  H01L21/2658 ,  H01L21/3215 ,  H01L21/67213 ,  H01L21/823814 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/66575

摘要： A method of manufacturing a semiconductor device includes the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant molecules contain n dopant atoms, where n is an integer number greater than 10. This method enables increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy, while reducing the charge per dopant atom by the factor n.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：向离子化室提供含有多个掺杂剂原子的分子，将所述分子电离成掺杂剂簇离子，用电场提取和加速掺杂剂簇离子，选择 通过质量分析获得所需的簇离子，通过后分析离子光学器件改变簇离子的最终注入能量，以及将掺杂剂簇离子注入到半导体衬底中。 通常，掺杂剂分子含有n个掺杂剂原子，其中n是大于10的整数。这种方法可以将掺杂剂剂量率增加到n次注入电流，每个掺杂剂原子能量的等效量为簇注入能量的1 / n倍 ，同时减少每个掺杂剂原子的电荷乘以因子n。

公开(公告)号：US20110226969A1

公开(公告)日：2011-09-22

申请号：US13102321

申请日：2011-05-06

申请人： Thomas N. Horsky ,  Dale C. Jacobson

发明人： Thomas N. Horsky ,  Dale C. Jacobson

IPC分类号： G21K5/00

CPC分类号： H01L21/26513 ,  H01J27/20 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/304 ,  H01L21/2658 ,  H01L21/3215 ,  H01L21/67213 ,  H01L21/823814 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/66575

摘要： An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide P-type doping for Source and Drain structures and for Polygates; these doping steps are critical to the formation of PMOS transistors. The molecular cluster ions have the chemical form BnHx+ and BnHx−, where 10≦n≦100 and 0≦x≦n+4.

摘要翻译： 描述了离子注入装置和制造半导体器件的方法，其中注入离子化硼氢化物分子簇以形成P型晶体管结构。 例如，在互补金属氧化物半导体（CMOS）器件的制造中，植入簇以提供用于源极和漏极结构的P型掺杂以及对于多栅极; 这些掺杂步骤对于PMOS晶体管的形成至关重要。 分子簇离子具有化学形式BnHx +和BnHx-，其中10＆nlE; n＆nlE; 100和0＆nlE; x＆nlE; n + 4。

公开(公告)号：US20110089321A1

公开(公告)日：2011-04-21

申请号：US12948298

申请日：2010-11-17

申请人： Hilton F. Glavish ,  Thomas N. Horsky ,  Dale C. Jacobson ,  Sami K. Hahto ,  Masao Naito ,  Nobuo Nagai ,  Nariaki Hamamoto

发明人： Hilton F. Glavish ,  Thomas N. Horsky ,  Dale C. Jacobson ,  Sami K. Hahto ,  Masao Naito ,  Nobuo Nagai ,  Nariaki Hamamoto

IPC分类号： H01J49/00 ,  H01L21/265 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/05 ,  H01J37/09 ,  H01J2237/0044 ,  H01J2237/0455 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/057 ,  H01J2237/14 ,  H01J2237/30477 ,  H01J2237/31703 ,  H01L21/26513

摘要： A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.

摘要翻译： 一种多用途离子注入机束线配置，包括质量分析器磁体，随后是磁扫描器和磁准直器组合，其将弯曲引入到光束路径，所述束线被构造用于使得能够注入常见的单原子掺杂离子种类簇离子，所述束线配置具有 质量分析器磁体限定磁体的铁磁极之间的相当宽度的磁极间隙和质量选择孔，分析器磁体的尺寸设计成接受来自至少约80mm高度的槽形离子源提取孔的离子束，并且在 至少约7mm的宽度，并且在对应于梁的宽度的平面中的质量选择孔处产生分散体，质量选择孔能够被设定为质量选择宽度，该质量选择宽度的尺寸被选择为选择聚集离子的束 相同的掺杂物种类但递增不同的分子量，质量选择孔径也能够基本上被设定 较窄的质量选择宽度和具有质量选择孔径的分辨率的分析器磁体足以能够选择基本上单个原子或分子量的单原子掺杂离子束，磁扫描器和磁准直器被构造为连续弯曲离子 在相同意义上的光束，其与由光束线的分析器磁体引入的弯曲的方向相反。

公开(公告)号：US07609003B2

公开(公告)日：2009-10-27

申请号：US11365719

申请日：2006-03-01

申请人： Thomas N. Horsky ,  Brian C. Cohen ,  Wade A. Krull ,  George P. Sacco, Jr.

发明人： Thomas N. Horsky ,  Brian C. Cohen ,  Wade A. Krull ,  George P. Sacco, Jr.

IPC分类号： H01J7/24

CPC分类号： H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L29/6659

摘要： Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of FIG. (20), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.

摘要翻译： 具有高亮度的离子注入，通过电离气体或蒸气的离子束，例如， 通过与离子化室（80; 175）的出口孔（46,176）相邻的直接电子碰撞电离，产生二聚体或十硼烷。 优选地，维持产生大量离子密度并且将离子的横向动能限制在小于0.7eV的条件; 邻近孔径的电离体积的宽度被限制为小于孔的宽度的约三倍的宽度; 孔径非常细长; 避免或限制磁场; 保持低离子束噪声; 维持电离室内的条件，防止形成电弧放电。 使用离子束光学器件，例如图1的批量注入机。 （20）或串联注入器中，离子源的离子被输送到目标表面并植入; 有利地，在一些情况下，结合使用簇离子束的加速 - 减速束线。 还公开了电子枪结构，用于电子和电离室配置的带状源。 形成半导体器件的特征。 示出了CMOS器件的漏极延伸和平板的掺杂。

公开(公告)号：US07064491B2

公开(公告)日：2006-06-20

申请号：US10433493

申请日：2001-06-12

申请人： Thomas N. Horsky ,  Brian C. Cohen ,  Wade A. Krull ,  George P. Sacco, Jr.

发明人： Thomas N. Horsky ,  Brian C. Cohen ,  Wade A. Krull ,  George P. Sacco, Jr.

IPC分类号： H01J7/24 ,  H01J27/00

CPC分类号： H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L29/6659

摘要： Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of FIG. (20), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.

摘要翻译： 具有高亮度的离子注入，通过电离气体或蒸气的离子束，例如， 通过与离子化室（80; 175）的出口孔（46,176）相邻的直接电子碰撞电离，产生二聚体或十硼烷。 优选地，维持产生大量离子密度并且将离子的横向动能限制在小于0.7eV的条件; 邻近孔径的电离体积的宽度被限制为小于孔的宽度的约三倍的宽度; 孔径非常细长; 避免或限制磁场; 保持低离子束噪声; 维持电离室内的条件，防止形成电弧放电。 使用离子束光学器件，例如图1的批量注入机。 （20）或串联注入器中，离子源的离子被输送到目标表面并植入; 有利地，在一些情况下，结合使用簇离子束的加速 - 减速束线。 还公开了电子枪结构，用于电子和电离室配置的带状源。 形成半导体器件的特征。 示出了CMOS器件的漏极延伸和平板的掺杂。