Memory devices
    1.
    发明授权
    Memory devices 有权
    内存设备

    公开(公告)号:US08872270B2

    公开(公告)日:2014-10-28

    申请号:US13686212

    申请日:2012-11-27

    Abstract: Memory devices and methods of fabricating the same include a substrate including a cell region and a peripheral circuit region, data storages on the cell region, first bit lines on and coupled to the data storages, first contacts coupled to peripheral transistors on the peripheral circuit region, and second bit lines on and coupled to the first contacts. The second bit lines may each have a lowermost surface lower than a lowermost surface of the data storages.

    Abstract translation: 存储器件及其制造方法包括:包括单元区域和外围电路区域的衬底,在单元区域上的数据存储,在数据存储器上并耦合到数据存储器的第一位线,耦合到外围电路区域上的外围晶体管的第一触点 以及在第一触点上并耦合到第一触点的第二位线。 第二位线可以各自具有低于数据存储器的最低表面的最下表面。

    Floating recovery device for underwater equipment

    公开(公告)号:US10029771B2

    公开(公告)日:2018-07-24

    申请号:US15458291

    申请日:2017-03-14

    Applicant: Ki Joon Kim

    Inventor: Ki Joon Kim

    Abstract: Disclosed herein is a floating recovery device for underwater equipment. The device includes a recovery body partitioned into a first compartment, a second compartment, and a third compartment by a partition wall, first and second pressure tanks installed in the first and second compartments, respectively, first and second striking parts fastened to the first and second pressure tanks, respectively, to strike the first and second pressure tanks, first and second actuators wirelessly actuating the first and second striking parts, respectively, and a buoyancy generator installed in the third compartment, and inflated by high-pressure gas introduced from the first and second pressure tanks, thus generating buoyancy. Such a configuration allows the pressure tank to be wirelessly struck for the purpose of supplying high-pressure gas to the buoyancy generator and floating the underwater equipment in the event of the loss of the underwater equipment.

    Magnetic memory devices
    3.
    发明授权
    Magnetic memory devices 有权
    磁存储器件

    公开(公告)号:US08405077B2

    公开(公告)日:2013-03-26

    申请号:US13070890

    申请日:2011-03-24

    Applicant: Ki Joon Kim

    Inventor: Ki Joon Kim

    Abstract: Provided is a magnetic memory device and a method of forming the same. A first magnetic conductive layer is disposed on a substrate. A first tunnel barrier layer including a first metallic element and a first non-metallic element is disposed on the first magnetic conductive layer. A second magnetic conductive layer is disposed on the first tunnel barrier layer. A content of an isotope of the first metallic element having a non-zero nuclear spin quantum number is lower than a natural state.

    Abstract translation: 提供一种磁存储器件及其形成方法。 第一导电层设置在基板上。 包括第一金属元件和第一非金属元件的第一隧道势垒层设置在第一导电层上。 第二导电层设置在第一隧道势垒层上。 具有非零核自旋量子数的第一金属元素的同位素含量低于自然状态。

    METHOD OF FABRICATING RESISTANCE VARIABLE MEMORY DEVICE AND DEVICES AND SYSTEMS FORMED THEREBY
    5.
    发明申请
    METHOD OF FABRICATING RESISTANCE VARIABLE MEMORY DEVICE AND DEVICES AND SYSTEMS FORMED THEREBY 审中-公开
    电阻可变存储器件的制造方法及其形成的器件及其系统

    公开(公告)号:US20130040408A1

    公开(公告)日:2013-02-14

    申请号:US13569425

    申请日:2012-08-08

    CPC classification number: H01L21/76897 H01L27/228 H01L27/2436

    Abstract: An exemplary method of forming a variable resistance memory may include forming first source/drain regions in a substrate, forming gate line structures and conductive isolation patterns buried in the substrate with the first source/drain regions interposed therebetween, and forming lower contact plugs on the first source/drain regions. The forming of lower contact plugs may include forming a first interlayer insulating layer, including a first recess region exposing the first source/drain regions adjacent to each other in a first direction, forming a conductive layer in the first recess region, patterning the conductive layer to form preliminary conductive patterns spaced apart from each other in the first direction, and patterning the preliminary conductive patterns to form conductive patterns spaced apart from each other in a second direction substantially orthogonal to the first direction.

    Abstract translation: 形成可变电阻存储器的示例性方法可以包括在衬底中形成第一源极/漏极区域,形成栅极线结构和埋入衬底中的导电隔离图案,其中介于其间的第一源极/漏极区域形成下部接触插塞 第一源/漏区。 下接触塞的形成可以包括形成第一层间绝缘层,其包括在第一方向上暴露彼此相邻的第一源极/漏极区的第一凹部区域,在第一凹部区域中形成导电层,图案化导电层 以在第一方向上形成彼此间隔开的初步导电图案,并且将初步导电图案图案化以形成在与第一方向大致正交的第二方向上彼此间隔开的导电图案。

    Sample collection apparatus for analysis of air pollution comprising moisture pretreatment means
    6.
    发明授权
    Sample collection apparatus for analysis of air pollution comprising moisture pretreatment means 有权
    用于分析空气污染的样品收集装置,包括水分预处理装置

    公开(公告)号:US07392689B2

    公开(公告)日:2008-07-01

    申请号:US11712190

    申请日:2007-02-28

    CPC classification number: G01N1/2273 G01N1/2205 G01N2001/2282

    Abstract: Disclosed herein is a sample collection apparatus which includes a pretreatment unit arranged in front of a sample collection section to remove moisture, a first Peltier trap positioned at the lower side of the pretreatment unit to perform cooling condensation and thermal desorption, a switching valve connected to the rear of the pretreatment unit to determine flow paths through first, second, third and fourth ports, a sample collection section arranged at the rear of the switching valve to collect samples, a second Peltier trap positioned at the lower side of the sample collection section to perform thermal desorption, a first air pump connected to the second port of the switching valve to intake air, a second air pump connected to the rear of the sample collection section to intake and exhaust air, and a sample analyzer connected to the fourth port of the switching valve to analyze the samples.

    Abstract translation: 本文公开了一种样品收集装置,其包括布置在样品收集部分前面以去除水分的预处理单元,位于预处理单元下侧的第一珀尔帖阱,以进行冷凝和热解吸;切换阀连接到 所述预处理单元的后部以确定通过第一,第二,第三和第四端口的流动路径,布置在所述切换阀的后部以收集样品的样品收集部分,位于所述样品收集部分的下侧的第二珀尔贴陷阱 进行热解吸,连接到切换阀的第二端口的第一空气泵进入空气,连接到样品收集部分的后部以进出排气的第二气泵和连接到第四端口的样品分析器 的开关阀来分析样品。

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