公开(公告)号：US20180090325A1

公开(公告)日：2018-03-29

申请号：US15601045

申请日：2017-05-22

申请人： Ki-hyun YOON ,  Hauk HAN ,  Yeon-sil SOHN ,  Seul-gi BAE ,  Hyun-seok LIM

发明人： Ki-hyun YOON ,  Hauk HAN ,  Yeon-sil SOHN ,  Seul-gi BAE ,  Hyun-seok LIM

IPC分类号： H01L21/28 ,  H01L29/40 ,  H01L29/66 ,  H01L27/11556 ,  H01L27/11582

CPC分类号： H01L21/76841 ,  H01L21/28088 ,  H01L21/8221 ,  H01L21/8239 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53271 ,  H01L27/1052 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/401 ,  H01L29/66477 ,  H01L29/792 ,  H01L29/7926

摘要： A method of manufacturing a semiconductor device includes forming an insulating pattern layer on a substrate, conformally forming a first conductive layer with a first thickness on the insulating pattern layer, wet etching the first conductive layer to have a second thickness that is less than the first thickness, and forming a second conductive layer on the first conductive layer after wet etching the first conductive layer. The second conductive layer includes a material that is different from a material included in the first conductive layer.