公开(公告)号：US20180308998A1

公开(公告)日：2018-10-25

申请号：US15492267

申请日：2017-04-20

Applicant: King Abdulaziz University

Inventor： Wageh SWELM ,  Fahrettin Yakuphanoglu ,  Ahmed A. Al-Ghamdi ,  Yusuf Abdulaziz Al-Turki

IPC: H01L31/0352 ,  H01L31/0224 ,  H01L31/072 ,  H01L31/0336 ,  H01L31/18 ,  G01J1/42

CPC classification number: H01L31/035218 ,  G01J1/42 ,  G01J5/0853 ,  G01J5/28 ,  G01J2001/4266 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/0296 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/072 ,  H01L31/109 ,  H01L31/18 ,  Y02E10/50

Abstract: A photodiode comprising a photoactive spinel oxide layer is described. This photoactive spinel oxide layer forms a contact with both a light absorption layer of quantum dots, quantum wires, or quantum rods, and an inorganic substrate layer. In some embodiments, the inorganic substrate layer and the photoactive spinel oxide layer form an isotype junction. Methods of characterizing the photodiode are provided and demonstrate commercially relevant electrical and optoelectronic properties, particularly the ability to operate as a photodetector with a high photosensitivity. An economical process for preparing the photodiode is provided as well as applications.