公开(公告)号：US10784410B2

公开(公告)日：2020-09-22

申请号：US16315081

申请日：2017-07-25

Applicant: King Abdullah University of Science and Technology

Inventor： Tien Khee Ng ,  Chao Zhao ,  Davide Priante ,  Boon S. Ooi ,  Mohamed Ebaid Abdrabou Hussein

IPC: H01L33/56 ,  H01L33/44 ,  C25B1/00 ,  H01L31/0216 ,  C25B1/04 ,  H01L31/18 ,  H01L31/0304 ,  H01L33/20 ,  H01L33/32

Abstract: Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and/or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and/or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.