公开(公告)号：US10665451B2

公开(公告)日：2020-05-26

申请号：US15753578

申请日：2016-10-07

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Boon Siew Ooi ,  Chao Zhao ,  Tien Khee Ng

IPC: H01L21/02 ,  H01L29/06 ,  H01L31/0352 ,  H01L33/22 ,  H01L33/32 ,  H01L33/40

Abstract: Elemental or compound semiconductors on metal substrates and methods of growing them are provided. The methods can include the steps of: (i) providing a metal substrate; (ii) adding an interlayer on a surface of the metal substrate, and (iii) growing semiconductor nanowires on the interlayer using a semiconductor epitaxy growth system to form the elemental or compound semiconductor. The method can include direct growth of high quality group III-V and group III-N based materials in the form of nanowires and nanowires-based devices on metal substrates. The nanowires on all-metal scheme greatly simplifies the fabrication process of nanowires based high power light emitters.

公开(公告)号：US11127591B2

公开(公告)日：2021-09-21

申请号：US16090758

申请日：2017-05-09

Applicant: King Abdullah University of Science and Technology ,  KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY

Inventor： Chao Zhao ,  Tien Khee Ng ,  Lain-Jong Li ,  Boon Siew Ooi ,  Ahmed Y. Alyameni ,  Munir M. Eldesouki

IPC: H01L29/10 ,  H01L21/02 ,  H01L29/06 ,  H01L29/267 ,  H01L23/29

Abstract: Methods of direct growth of high quality group III-V and group III-N based materials and semiconductor device structures in the form of nanowires, planar thin film, and nanowires-based devices on metal substrates are presented. The present compound semiconductor all-metal scheme greatly simplifies the fabrication process of high power light emitters overcoming limited thermal and electrical conductivity of nanowires grown on silicon substrates and metal thin film in prior art. In an embodiment the methods include: (i) providing a metal substrate; (ii) forming a transition metal dichalcogenide (TMDC) layer on a surface of the metal substrate; and (iii) growing a semiconductor epilayer on the transition metal dichalcogenide layer using a semiconductor epitaxy growth system. In an embodiment, the semiconductor device structures can be compound semiconductors in contact with a layer of metal dichalcogenide, wherein the layer of metal dichalcogenide is in contact with a metal substrate.

公开(公告)号：US11572984B2

公开(公告)日：2023-02-07

申请号：US17245896

申请日：2021-04-30

Applicant: King Abdullah University of Science and Technology

Inventor： Boon S. Ooi ,  Bilal Janjua ,  Chao Shen ,  Chao Zhao ,  Tien Khee Ng

IPC: H01L33/06 ,  F21K9/00 ,  H01L33/08 ,  H01L33/32 ,  H04B10/116 ,  H04B10/11 ,  F21Y115/10 ,  F21Y115/30

Abstract: Embodiments of the present disclosure describe a white light illumination system using InGaN-based orange nanowires (NWs) LED, in conjunction with a blue LD for high speed optical wireless communications. By changing the relative intensities of an ultrabroad linewidth orange LED and narrow-linewidth blue LD components, a hybrid LED/LD device achieves correlated color temperature (CCT) ranging from 3000 K to above 6000 K with color rendering index (CRI) values reaching 83.1. Orange-emitting NWs LED are utilized as an active-phosphor, while a blue LD was used for both color mixing and optical wireless communications.

公开(公告)号：US10784410B2

公开(公告)日：2020-09-22

申请号：US16315081

申请日：2017-07-25

Applicant: King Abdullah University of Science and Technology

Inventor： Tien Khee Ng ,  Chao Zhao ,  Davide Priante ,  Boon S. Ooi ,  Mohamed Ebaid Abdrabou Hussein

IPC: H01L33/56 ,  H01L33/44 ,  C25B1/00 ,  H01L31/0216 ,  C25B1/04 ,  H01L31/18 ,  H01L31/0304 ,  H01L33/20 ,  H01L33/32

Abstract: Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and/or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and/or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.

公开(公告)号：US10995914B2

公开(公告)日：2021-05-04

申请号：US16686993

申请日：2019-11-18

Applicant: King Abdullah University of Science and Technology

Inventor： Boon S. Ooi ,  Bilal Janjua ,  Chao Shen ,  Chao Zhao ,  Tien Khee Ng

IPC: H01L21/00 ,  F21K9/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H04B10/116 ,  H04B10/11 ,  F21Y115/10 ,  F21Y115/30

Abstract: Embodiments of the present disclosure describe a white light illumination system using InGaN-based orange nanowires (NWs) LED, in conjunction with a blue LD for high speed optical wireless communications. By changing the relative intensities of an ultrabroad linewidth orange LED and narrow-linewidth blue LD components, a hybrid LED/LD device achieves correlated color temperature (CCT) ranging from 3000 K to above 6000K with color rendering index (CRI) values reaching 83.1. Orange-emitting NWs LED are utilized as an active-phosphor, while a blue LD was used for both color mixing and optical wireless communications.

公开(公告)号：US10480719B2

公开(公告)日：2019-11-19

申请号：US15674275

申请日：2017-08-10

Applicant: King Abdullah University of Science and Technology

Inventor： Boon S. Ooi ,  Bilal Janjua ,  Chao Shen ,  Chao Zhao ,  Tien Khee Ng

IPC: F21K9/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H04B10/11 ,  F21Y115/10 ,  F21Y115/30

Abstract: Embodiments of the present disclosure describe a white light illumination system using InGaN-based orange nanowires (NWs) LED, in conjunction with a blue LD for high speed optical wireless communications. By changing the relative intensities of an ultrabroad linewidth orange LED and narrow-linewidth blue LD components, a hybrid LED/LD device achieves correlated color temperature (CCT) ranging from 3000 K to above 6000K with color rendering index (CRI) values reaching 83.1. Orange-emitting NWs LED are utilized as an active-phosphor, while a blue LD was used for both color mixing and optical wireless communications