Method of fabricating organo-lead halide perovskites thin single crystals

    公开(公告)号:US10749120B2

    公开(公告)日:2020-08-18

    申请号:US16330852

    申请日:2017-09-05

    IPC分类号: H01L51/00 H01L51/05 C07F7/24

    摘要: Embodiments of the present disclosure describe a method of fabricating a semiconducting material, comprising fixing a first substrate to a second substrate via a bonding material sufficient to form a two-substrate support with a cavity region, applying an organo-lead halide perovskite precursor solution to the cavity region of the two-substrate support, and annealing sufficient to form in the cavity region a semiconducting material including an organo-lead halide perovskite thin single crystal. Embodiments of the present disclosure further describe a transistor comprising a source terminal, a drain terminal, a channel layer extending between the source terminal and the drain terminal and including an organo-lead halide perovskite thin single crystal, a gate terminal, and an insulating layer separating the gate terminal from the source terminal, drain terminal, and channel layer sufficient to form a transistor.