公开(公告)号：US20230301108A1

公开(公告)日：2023-09-21

申请号：US17885739

申请日：2022-08-11

Applicant: Kioxia Corporation

Inventor： Tatsuki KOSHIDA ,  Takayuki ISHIKAWA ,  Kenzo MANABE ,  Daisuke KUWABARA

IPC: H01L27/11573 ,  H01L27/11568 ,  H01L21/28

CPC classification number: H01L27/11573 ,  H01L27/11568 ,  H01L29/40117

Abstract: A semiconductor memory device includes a semiconductor layer extending in a first direction, a conductive layer opposed to the semiconductor layer in a second direction intersecting with the first direction, an electric charge accumulating layer disposed between the semiconductor layer and the conductive layer, a first insulating layer disposed between the semiconductor layer and the electric charge accumulating layer, and a second insulating layer disposed between the conductive layer and the electric charge accumulating layer. The semiconductor layer includes at least one protrusion protruding in the second direction toward the electric charge accumulating layer. A position in the first direction of the protrusion is inside with respect to corner portions at both ends in the first direction of a surface opposed to the semiconductor layer in the electric charge accumulating layer.