公开(公告)号：US20220085053A1

公开(公告)日：2022-03-17

申请号：US17466200

申请日：2021-09-03

Applicant: Kioxia Corporation

Inventor： Masayuki KITAMURA ,  Takuya HIROHASHI ,  Shigeru KINOSHITA ,  Hiroshi TOYOTA

IPC: H01L27/11578 ,  H01L27/11565 ,  G11C16/14

Abstract: According to one embodiment, a semiconductor device includes: a stacked body including an insulating layer, and a conductive layer containing molybdenum; an aluminum oxide layer provided between the insulating layer and the conductive layer; and a protective layer in contact with the aluminum oxide layer, containing one of carbon, nitrogen, or sulfur bonded to aluminum in the aluminum oxide layer, and also in contact with the conductive layer.