公开(公告)号：US20220293620A1

公开(公告)日：2022-09-15

申请号：US17408938

申请日：2021-08-23

Applicant: Kioxia Corporation

Inventor： Shigeru KINOSHITA

IPC: H01L27/11565 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11582

Abstract: A semiconductor memory device comprises: a first conductive and second conductive layers extending in a first direction; and first and second semiconductor column rows aligned in a second direction. The first semiconductor column rows each comprise first semiconductor columns aligned in the first direction and facing the first conductive layer. The second semiconductor column rows each comprise second semiconductor columns aligned in the first direction and facing the second conductive layer. For example, a distance in the first direction between center positions of two of the first semiconductor columns adjacent in the first direction is assumed to be a first adjacent distance. In this case, a pitch in the second direction of the first semiconductor column rows is √3/2 or more times the first adjacent distance. Moreover, a pitch in the second direction of the second semiconductor column rows is less than √3/2 times the first adjacent distance.

公开(公告)号：US20230295801A1

公开(公告)日：2023-09-21

申请号：US17943695

申请日：2022-09-13

Applicant: Kioxia Corporation

Inventor： Shigeru KINOSHITA ,  Hiroshi TOYODA ,  Satoshi WAKATSUKI ,  Masayuki KITAMURA ,  Naomi FUKUMAKI

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/40 ,  C23C16/34

CPC classification number: C23C16/45529 ,  C23C16/34 ,  C23C16/403 ,  C23C16/4408 ,  C23C16/4412 ,  C23C16/45544

Abstract: According to one embodiment, a film forming method includes alternately performing a first process including at least two times of a first sequence and a second process including at least one time of a second sequence. The first sequence includes supplying a film forming gas into a film forming chamber, supplying a first purge gas into the film forming chamber, supplying a first reduction gas into the film forming chamber, and supplying a second purge gas into the film forming chamber, in order, and the second sequence includes supplying a second reduction gas into the film forming chamber, and supplying a third purge gas into the film forming chamber, in order.

公开(公告)号：US20220085053A1

公开(公告)日：2022-03-17

申请号：US17466200

申请日：2021-09-03

Applicant: Kioxia Corporation

Inventor： Masayuki KITAMURA ,  Takuya HIROHASHI ,  Shigeru KINOSHITA ,  Hiroshi TOYOTA

IPC: H01L27/11578 ,  H01L27/11565 ,  G11C16/14

Abstract: According to one embodiment, a semiconductor device includes: a stacked body including an insulating layer, and a conductive layer containing molybdenum; an aluminum oxide layer provided between the insulating layer and the conductive layer; and a protective layer in contact with the aluminum oxide layer, containing one of carbon, nitrogen, or sulfur bonded to aluminum in the aluminum oxide layer, and also in contact with the conductive layer.