公开(公告)号：US11769747B2

公开(公告)日：2023-09-26

申请号：US17350473

申请日：2021-06-17

申请人： Kioxia Corporation

发明人： Genki Sawada ,  Masayoshi Tagami ,  Jun Iijima ,  Ippei Kume ,  Kiyomitsu Yoshida

IPC分类号： H01L23/00 ,  H01L25/18

CPC分类号： H01L24/32 ,  H01L24/05 ,  H01L24/09 ,  H01L24/83 ,  H01L25/18 ,  H01L24/29 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05149 ,  H01L2224/05166 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/09515 ,  H01L2224/29186 ,  H01L2224/32105 ,  H01L2224/32145 ,  H01L2224/32501 ,  H01L2224/83201 ,  H01L2224/83896 ,  H01L2224/83948

摘要： In one embodiment, a semiconductor device includes a first insulator. The device further includes a first pad provided in the first insulator, and including first and second layers provided on lateral and lower faces of the first insulator in order. The device further includes a second insulator provided on the first insulator. The device further includes a second pad provided on the first pad in the second insulator, and including third and fourth layers provided on lateral and upper faces of the second insulator in order. The device further includes a first portion provided between an upper face of the first pad and a lower face of the second insulator or between a lower face of the second pad and an upper face of the first insulator, and including a metal element same as a metal element included in the first layer or the third layer.

公开(公告)号：US11587849B2

公开(公告)日：2023-02-21

申请号：US17116037

申请日：2020-12-09

申请人： Kioxia Corporation

发明人： Ippei Kume ,  Kazuhiko Nakamura ,  Shinya Okuda

IPC分类号： H01L23/48 ,  H01L21/02 ,  H01L21/768 ,  H01L23/528 ,  H01L21/3065

摘要： A device includes a substrate having a first-face and a second-face. An electrode is provided in a through hole that penetrates through the substrate between the first-face and the second-face. A first-insulator is provided in the substrate and protrudes in a radial direction from an opening end of the through hole on a side close to the second-face to a center of the through hole as viewed from above the first-face. A second-insulator protrudes in the radial direction from the first-insulator as viewed from above the first-face, is thinner than the first-insulator, and is in contact with the electrode. A third-insulator is provided between an inner wall of the through hole and the electrode, and includes a first-portion that is in contact with the first-insulator and a second-portion that is in contact with the inner wall of the through hole and is closer to the second-face than the first-portion.