公开(公告)号：US20210280438A1

公开(公告)日：2021-09-09

申请号：US17119043

申请日：2020-12-11

Applicant: Kioxia Corporation

Inventor： Katsuhiro SATO ,  Hiroshi FUJITA ,  Yoshinori KITAMURA ,  Satoshi NAKAOKA ,  Tomohiko SUGITA

IPC: H01L21/67 ,  H01L21/306

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a container configured to contain a substrate, and a pipe configured to supply the container with liquid to treat the substrate. The apparatus further includes an ejector including a first passage where the liquid introduced from the pipe and the liquid introduced from the container are joined and pass through, and a first opening configured to eject the liquid that has passed through the first passage. Furthermore, the first passage has an area where a sectional area of the first passage becomes large as advancing downstream in the liquid.

公开(公告)号：US20240087918A1

公开(公告)日：2024-03-14

申请号：US18458034

申请日：2023-08-29

Applicant: Kioxia Corporation

Inventor： Tomohiko SUGITA ,  Hiroshi FUJITA ,  Tatsuhiko KOIDE ,  Katsuhiro SATO

IPC: H01L21/67 ,  H01L21/311

CPC classification number: H01L21/67086 ,  H01L21/31111

Abstract: According to one embodiment, a substrate processing apparatus has a treatment tank, a holder to hold the substrate while in the treatment tank, a chemical discharge pipe below a position of the holder for supplying a chemical solution to the treatment tank, a bubble discharge pipe below the position of the holder for discharging a gas. The first bubble discharge pipe is closer along a horizontal direction to a centerline of the treatment tank than is the chemical discharge pipe. A rectifying plate is disposed below the position of the holder and extends from a position above the chemical discharge pipe to a position above the first bubble discharge pipe at an incline with respect to the first direction horizontal.

公开(公告)号：US20230089765A1

公开(公告)日：2023-03-23

申请号：US17684206

申请日：2022-03-01

Applicant: KIOXIA CORPORATION

Inventor： Katsuhiro SATO ,  Hiroshi Fujita ,  Tatsuhiko Koide

IPC: H01L21/02 ,  H01L21/67

Abstract: According to one embodiment, a substrate processing apparatus includes a batch type cleaning unit, a holding unit, and a single-substrate type drying unit. The batch type cleaning unit simultaneously cleans a plurality of substrates in a batch process with a first liquid. The holding unit receives the cleaned substrates while still wet and then keeps a first surface of each of the substrates wet with the first liquid. The single-substrate type drying unit is configured to receive the substrates one by one from the holding unit and then dry off the substrates one by one.