公开(公告)号：US20240292626A1

公开(公告)日：2024-08-29

申请号：US18585206

申请日：2024-02-23

Applicant: Kioxia Corporation

Inventor： Kazuki SHOJI ,  Tadashi IGUCHI

IPC: H10B43/35 ,  H10B43/10 ,  H10B43/20

CPC classification number: H10B43/35 ,  H10B43/10 ,  H10B43/20

Abstract: A semiconductor memory device includes a first stacked body that includes first insulating films and first conductive films alternately stacked in a first direction; first columnar bodies each including a first semiconductor structure extending through the first stacked body, the plurality of first columnar bodies being configured as memory cells; and a plurality of second columnar bodies that each include at least one conductor extending through the first stacked body in the first direction, and are each coupled to a corresponding one of the first conductive films and a stacked film including second, third, and fourth insulating films, wherein the second to fourth insulating films are provided between the at least one conductor and the first stacked body.