公开(公告)号：US20210082749A1

公开(公告)日：2021-03-18

申请号：US16807025

申请日：2020-03-02

Applicant: KIOXIA CORPORATION

Inventor： Kazuki TAKAHASHI ,  Shinya OKUDA

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor device includes depositing a first insulation film in a via hole of a semiconductor substrate and above a first surface thereof, the semiconductor substrate having a circuit substrate on a second surface thereof, depositing a second insulation film having a covering property lower than the first insulation film in the via hole and above the first surface, and removing the first and second insulation films deposited at the bottom of the via hole by anisotropic etching.

公开(公告)号：US20230101002A1

公开(公告)日：2023-03-30

申请号：US17694080

申请日：2022-03-14

Applicant: Kioxia Corporation

Inventor： Gen TOYOTA ,  Satoshi HONGO ,  Tatsuo MIGITA ,  Susumu YAMAMOTO ,  Tsutomu FUJITA ,  Eiichi SHIN ,  Yukio KATAMURA ,  Hideki MATSUSHIGE ,  Kazuki TAKAHASHI

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/48 ,  H01L23/31 ,  H01L21/56

Abstract: A semiconductor device including a base substrate B, which includes wire layers, chips C1, C2, C3, C4, C5, and C6 provided on the base substrate B, and a protective film P provided on each of the side faces of the chips C1, C2, C3, C4, C5, and C6.