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公开(公告)号:US11790984B1
公开(公告)日:2023-10-17
申请号:US17703199
申请日:2022-03-24
Applicant: Kioxia Corporation
Inventor: Nimrod Bregman , Ofir Kanter
IPC: G11C11/4099 , G11C11/4096 , G11C11/54 , G06F18/22 , G06F18/214
CPC classification number: G11C11/4099 , G06F18/214 , G06F18/22 , G11C11/4096 , G11C11/54
Abstract: A flash memory system may include a flash memory and a circuit for performing operations on the flash memory. The circuit may be configured to obtain reference voltages from one or more read samples, and a plurality of sets of reference voltages. The circuit may be configured to obtain a plurality of distances, each being a distance between a point corresponding to the obtained reference voltages and a point corresponding to a respective set of reference voltages. The circuit may be configured to determine a first set of reference voltages such that a distance between the point corresponding to the obtained reference voltages and a point corresponding to the first set of reference voltage is a minimum distance of the plurality of distances. The circuit may be configured to perform read operations on locations of the flash memory with the first set of reference voltages.
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公开(公告)号:US12176924B2
公开(公告)日:2024-12-24
申请号:US18184916
申请日:2023-03-16
Applicant: Kioxia Corporation
Inventor: Avi Steiner , Ofir Kanter , Hanan Weingarten , Assaf Sella , Nimrod Bregman , Yasuhiko Kurosawa
Abstract: Systems, methods, non-transitory computer-readable media configured to perform operations associated with a storage medium. One system includes the storage medium and an encoding/decoding (ED) system, the ED system being configured to receive a set of input log-likelihood ratios (LLRs) of a component of the plurality of components, determine an extrinsic estimation function based on a set of features of the set of input LLRs, analyze the extrinsic estimation function to obtain a plurality of extrinsic LLR values, map the plurality of extrinsic LLR values to an input LLR of the set of input LLRs, and output, for each component, a plurality of updated LLR values based on the mapping.
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公开(公告)号:US20240313806A1
公开(公告)日:2024-09-19
申请号:US18184916
申请日:2023-03-16
Applicant: Kioxia Corporation
Inventor: Avi Steiner , Ofir Kanter , Hanan Weingarten , Assaf Sella , Nimrod Bregman , Yasuhiko Kurosawa
CPC classification number: H03M13/2909 , H03M13/1105
Abstract: Systems, methods, non-transitory computer-readable media configured to perform operations associated with a storage medium. One system includes the storage medium and an encoding/decoding (ED) system, the ED system being configured to receive a set of input log-likelihood ratios (LLRs) of a component of the plurality of components, determine an extrinsic estimation function based on a set of features of the set of input LLRs, analyze the extrinsic estimation function to obtain a plurality of extrinsic LLR values, map the plurality of extrinsic LLR values to an input LLR of the set of input LLRs, and output, for each component, a plurality of updated LLR values based on the mapping.
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公开(公告)号:US20230307037A1
公开(公告)日:2023-09-28
申请号:US17703199
申请日:2022-03-24
Applicant: Kioxia Corporation
Inventor: Nimrod Bregman , Ofir Kanter
IPC: G11C11/4099 , G11C11/4096 , G11C11/54 , G06K9/62
CPC classification number: G11C11/4099 , G11C11/4096 , G11C11/54 , G06K9/6215 , G06K9/6256
Abstract: A flash memory system may include a flash memory and a circuit for performing operations on the flash memory. The circuit may be configured to obtain reference voltages from one or more read samples, and a plurality of sets of reference voltages. The circuit may be configured to obtain a plurality of distances, each being a distance between a point corresponding to the obtained reference voltages and a point corresponding to a respective set of reference voltages. The circuit may be configured to determine a first set of reference voltages such that a distance between the point corresponding to the obtained reference voltages and a point corresponding to the first set of reference voltage is a minimum distance of the plurality of distances. The circuit may be configured to perform read operations on locations of the flash memory with the first set of reference voltages.
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