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公开(公告)号：US20230017218A1
公开(公告)日：2023-01-19
申请号：US17952718
申请日：2022-09-26
申请人： Kioxia Corporation
IPC分类号： H01L29/06 , H01L21/761 , H01L21/762
摘要： A semiconductor device including a first chip and a second chip. The first chip includes: a first substrate; a first transistor that is provided on the first substrate; and a first pad that is provided above the first transistor and that is electrically connected to the first transistor. The second chip includes: a second pad that is provided on the first pad; a second substrate that is provided above the second pad and that includes a first diffusion layer and a second diffusion layer, at least one of the first diffusion layer and the second diffusion layer being electrically connected to the second pad; and an isolation insulating film or an isolation trench that extends at least from an upper surface of the second substrate to a lower surface of the second substrate within the second substrate and that isolates the first diffusion layer from the second diffusion layer.
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公开(公告)号：US20230129339A1
公开(公告)日：2023-04-27
申请号：US18145979
申请日：2022-12-23
申请人： Kioxia Corporation
发明人： Takahiro TOMIMATSU , Shinya ARAI
IPC分类号： H01L23/00 , H01L25/065 , H01L25/18 , H01L23/535 , H01L25/00
摘要： According to one embodiment, a semiconductor device includes a first substrate; a first insulating film provided on the first substrate; a first plug provided in the first insulating film; a second substrate provided on the first insulating film; and a first wiring including a first portion and a second portion. The first portion is provided in the second substrate and coupled to the first plug, and the second portion is provided on the second substrate and coupled to a bonding pad.
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公开(公告)号：US20220085003A1
公开(公告)日：2022-03-17
申请号：US17189955
申请日：2021-03-02
申请人： Kioxia Corporation
摘要： According to one embodiment, a semiconductor device includes a first chip, and a second chip bonded to the first chip. The first chip includes: a substrate; a transistor provided on the substrate; a plurality of first wirings provided above the transistor; and a plurality of first pads provided above the first wirings. The second chip includes: a plurality of second pads coupled to the plurality of first pads, respectively; a plurality of second wirings provided above the second pads; and a memory cell array provided above the second wirings. The first wiring, the first pad, the second pad, and the second wiring are coupled to one another in series to form a first pattern.
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公开(公告)号：US20220084970A1
公开(公告)日：2022-03-17
申请号：US17190006
申请日：2021-03-02
申请人： Kioxia Corporation
发明人： Takahiro TOMIMATSU , Shinya ARAI
IPC分类号： H01L23/00 , H01L25/065 , H01L25/18 , H01L23/535 , H01L25/00
摘要： According to one embodiment, a semiconductor device includes a first substrate; a first insulating film provided on the first substrate; a first plug provided in the first insulating film; a second substrate provided on the first insulating film; and a first wiring including a first portion and a second portion. The first portion is provided in the second substrate and coupled to the first plug, and the second portion is provided on the second substrate and coupled to a bonding pad.
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