公开(公告)号：US20240251559A1

公开(公告)日：2024-07-25

申请号：US18624967

申请日：2024-04-02

Applicant: Kioxia Corporation

Inventor： Takashi ISHIDA ,  Yoshiaki FUKUZUMI ,  Takayuki OKADA ,  Masaki TSUJI

IPC: H10B43/27 ,  H01L29/10 ,  H01L29/423 ,  H10B43/10 ,  H10B43/35

CPC classification number: H10B43/27 ,  H01L29/1037 ,  H01L29/4234 ,  H10B43/10 ,  H10B43/35

Abstract: According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.