公开(公告)号：US20230200050A1

公开(公告)日：2023-06-22

申请号：US17841129

申请日：2022-06-15

Applicant: Kioxia Corporation

Inventor： Akifumi GAWASE ,  Ha HOANG ,  Atsuko SAKATA ,  Yuta KAMIYA ,  Kazuhiro MATSUO ,  Keiichi SAWA ,  Kota TAKAHASHI ,  Kenichiro TORATANI ,  Yimin LIU

IPC: H01L27/108 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/10805 ,  H01L29/78642 ,  H01L29/7869 ,  H01L29/66969 ,  H01L27/10873

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; a gate insulating layer between the gate electrode and the oxide semiconductor layer; a first insulating layer provided between the first electrode and the gate electrode; and a second insulating layer provided between the second electrode and the gate electrode. In a cross section parallel to a first direction from the first electrode to the second electrode, a first portion of the oxide semiconductor layer is provided between the gate insulating layer and the first electrode. In the cross section, a second portion of the oxide semiconductor layer is provided between the gate insulating layer and the second electrode.

公开(公告)号：US20230307358A1

公开(公告)日：2023-09-28

申请号：US17942005

申请日：2022-09-09

Applicant: Kioxia Corporation

Inventor： Akifumi GAWASE ,  Yimin LIU

IPC: H01L23/528 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/76802 ,  H01L21/76877

Abstract: A semiconductor device includes first conductive layers, a width in a first direction thereof being a first width, a second conductive layer arranged with first conductive layers, a smaller one of a width in the first direction thereof and a width in a second direction thereof being a second width that is larger than the first width, a third conductive layer in contact with one end portion of at least one of first conductive layers, and a fourth conductive layer in contact with one end portion of the second conductive layer. The at least one of first conductive layers and the second conductive layer contain a first metal, a second metal, and oxygen (O). A concentration of the first metal of the at least one of first conductive layers is higher than a concentration of the first metal of the second conductive layer.