STORAGE DEVICE, CONTROL SYSTEM AND CONTROL METHOD

    公开(公告)号:US20240078174A1

    公开(公告)日:2024-03-07

    申请号:US18461217

    申请日:2023-09-05

    CPC classification number: G06F12/023

    Abstract: An information storage device includes a storage unit, a control unit, an allocation information storage unit, a QoS parameter storage unit, and a monitoring result storage unit. The control unit creates and manages a logical storage area using the storage area of the storage unit when a storage area allocation request is received. The allocation information storage unit stores allocation information related to logical storage areas. The QoS parameter storage unit stores quality requests expected to be satisfied for a communication for using the logical storage area. The control unit monitors the operating state and characteristics of the storage unit and the communication status, and stores the results in the monitoring result storage unit. The control unit derives internal QoS parameters to be set in the information storage device from the information stored in the allocation information storage unit, the QoS parameter storage unit, and the monitoring result storage unit.

    MEMORY SYSTEM
    2.
    发明申请

    公开(公告)号:US20220083273A1

    公开(公告)日:2022-03-17

    申请号:US17344230

    申请日:2021-06-10

    Inventor: Yoshiki SAITO

    Abstract: According to one embodiment, a memory system includes a non-volatile memory and a controller. The non-volatile memory includes first and second memory areas. The controller is configured to, when receiving a write command from the host, determine a write method. The controller is configured to, when a first method is determined, write the data to the first memory area. The controller is configured to, when a second method is determined, write the data to the second memory area. The first method is a write method of writing the data to a physical address associated with the logical address designated in the write command. The second method is a write method of writing the data to a physical address designated by the controller.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

    公开(公告)号:US20250089342A1

    公开(公告)日:2025-03-13

    申请号:US18822592

    申请日:2024-09-03

    Abstract: A semiconductor device of an embodiment includes: first and second regions that are provided in a substrate, the first and second regions containing impurities of a first conductivity type; a gate electrode disposed above the substrate between the first and second regions; first and second metal silicide layers disposed in the first and second regions, respectively; and first and second contacts connected to the first and second regions via the first and second metal silicide layers, respectively, in which the first and second contacts include: first and second oxidized silicide layers that are disposed at lower end portions of the first and second contacts and contain a predetermined metal different from metals included in the first and second metal silicide layers, respective; and metal layers that are in contact with the first and second oxidized silicide layers and extend in a second direction that intersects the first direction, respectively.

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