公开(公告)号：US20240407162A1

公开(公告)日：2024-12-05

申请号：US18801237

申请日：2024-08-12

Applicant: Kioxia Corporation

Inventor： Yoshiro SHIMOJO

IPC: H10B41/50 ,  H10B41/10 ,  H10B41/27 ,  H10B41/40 ,  H10B43/10 ,  H10B43/27 ,  H10B43/40 ,  H10B43/50

Abstract: According to one embodiment, a semiconductor memory device includes: a substrate; a first interconnect; a second interconnect; a plurality of third interconnects; a fourth interconnect; a semiconductor member; a charge storage member; and a conductive member. One of the plurality of third interconnects is disposed on two second-direction sides of the conductive member. Portions of the one of the plurality of third interconnects disposed on the two second-direction sides of the conductive member are formed as one body.

公开(公告)号：US20220285391A1

公开(公告)日：2022-09-08

申请号：US17412933

申请日：2021-08-26

Applicant: Kioxia Corporation

Inventor： Kazuharu YAMABE ,  Yoshiro SHIMOJO

IPC: H01L27/11582

Abstract: In a method for manufacturing a memory, a first stacked body is formed by stacking a first insulating film and a first sacrificial film. A first columnar body including a first semiconductor portion extending in the first stacked body in the first direction and a charge trapping film provided on an outer peripheral surface of the first semiconductor portion is formed. A second columnar body provided in a second direction of the first columnar body and including a second semiconductor portion stretching in the first stacked body in the first direction and a charge trapping film on an outer peripheral surface of the second semiconductor portion is formed. A second insulating film is formed above the first stacked body. A third columnar body including a third semiconductor portion provided on both the first columnar body and the second columnar body and stretching in the second insulating film in the first direction and a first gate insulating film provided on an outer peripheral surface of the third semiconductor portion is formed. A first division insulating film extending in the first direction and a third direction intersecting the first direction and the second direction and dividing the third semiconductor portion of the third columnar body in the second direction is formed.

公开(公告)号：US20240395697A1

公开(公告)日：2024-11-28

申请号：US18672449

申请日：2024-05-23

Applicant: Kioxia Corporation

Inventor： Mitsuhiko NODA ,  Masayoshi TAGAMI ,  Yoshiro SHIMOJO

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/00 ,  H01L23/532

Abstract: A semiconductor device includes a substrate, plugs, and interconnections. The plugs include a first plug and a second plug that are disposed above the substrate and extend in a first direction that crosses an upper surface of the substrate, and a third plug disposed above and electrically connected to the second plug and extending in the first direction. The interconnections include a first interconnection disposed above and electrically connected to the first plug, a second interconnection disposed below and electrically connected to the first plug, and a third interconnection disposed below and electrically connected to the second plug. The first interconnection contains copper. The third plug contains tungsten. An upper end of the second plug is different in level from an upper end of the first plug and a lower end of the second plug is same in level as a lower end of the first plug.

公开(公告)号：US20220278215A1

公开(公告)日：2022-09-01

申请号：US17409751

申请日：2021-08-23

Applicant: KIOXIA CORPORATION

Inventor： Yoshiro SHIMOJO

IPC: H01L29/423 ,  G11C16/04 ,  H01L23/528 ,  H01L27/11582 ,  H01L27/11565 ,  H01L21/28 ,  H01L29/66 ,  H01L29/792 ,  H01L27/1157

Abstract: A semiconductor storage device includes a first stacked body including first insulating films and first conductive films that are alternately stacked in a first direction. A first columnar body and a second columnar body extend within the first stacked body in the first direction. A second conductive film is provided above the first stacked body, and extends in a third direction intersecting the first direction and the second direction. A third insulator is adjacent to the second conductive film and extends in the third direction. A third conductive film is adjacent to the third insulator and extends in the third direction. A third columnar body is provided on the first columnar body. A fourth columnar body is provided on the second columnar body. A thickness of a third semiconductor portion in the first direction is greater than a thickness of the second conductive film in the first direction.

公开(公告)号：US20240404920A1

公开(公告)日：2024-12-05

申请号：US18807170

申请日：2024-08-16

Applicant: Kioxia Corporation

Inventor： Yasuhito YOSHIMIZU ,  Yoshiro SHIMOJO ,  Shinya ARAI

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/522 ,  H10B41/27 ,  H10B43/10 ,  H10B43/27

Abstract: According to one embodiment, a stacked body includes a plurality of electrode layers stacked with an insulator interposed. A conductive via pierces the stacked body, and connects an upper layer interconnect and a lower layer interconnect. A insulating film is provided between the via and the stacked body. A distance along a diametral direction of the via between a side surface of the via and an end surface of one of the electrode layers opposing the side surface of the via is greater than a distance along the diametral direction between the side surface of the via and an end surface of the insulator opposing the side surface of the via.