公开(公告)号：US11703465B2

公开(公告)日：2023-07-18

申请号：US17168491

申请日：2021-02-05

申请人： Kioxia Corporation

发明人： Nobuhito Kuge ,  Toshihisa Fujiwara ,  Yui Fujiwara ,  Chisaki Usui

IPC分类号： G01N23/207 ,  G01N23/2055

CPC分类号： G01N23/207 ,  G01N23/2055 ,  G01N2223/0561 ,  G01N2223/0566 ,  G01N2223/1016 ,  G01N2223/3037 ,  G01N2223/331 ,  G01N2223/3308 ,  G01N2223/403 ,  G01N2223/607 ,  G01N2223/6116

摘要： An apparatus for inspecting a semiconductor device according to an embodiment includes an X-ray irradiation unit configured to make monochromatic X-rays obliquely incident on the semiconductor device, which is an object at a predetermined angle of incidence, a detection unit configured to detect observed X-rays observed from the object using a plurality of two-dimensionally disposed photodetection elements, an analysis apparatus configured to generate X-ray diffraction images obtained by photoelectrically converting the observed X-rays, and a control unit configured to change an angle of incidence and a detection angle of the X-rays, in which the analysis apparatus acquires an X-ray diffraction image every time the angle of incidence is changed, extracts a peak X-ray diffraction image, X-ray intensity of which becomes maximum for each of pixels and compares the peak X-ray diffraction image among the pixels to thereby estimate a stress distribution of the object.