Curable epoxy resin compositions
    1.
    发明授权
    Curable epoxy resin compositions 失效
    可固化环氧树脂组合物

    公开(公告)号:US4328150A

    公开(公告)日:1982-05-04

    申请号:US243251

    申请日:1981-03-12

    摘要: The invention provides a novel epoxy-based curable resin composition suitable for encapsulation of electronic devices such as transistors, ICs, LSIs and the like. The composition comprises an epoxy compound, a novolac-type phenolic resin as the curing agent, an organophosphine compound such as triphenylphosphine and trilaurylphosphine as a curing accelerator and an inorganic filler. The advantages obtained by the combined use of the novolac-type phenolic resin and the organophosphine compound are very specific and the resin composition is imparted with remarkable flowability in molding and stability in storage in addition to the excellent electric properties at high temperatures and anti-moisture resistance of the cured shaped articles molded therefrom.

    摘要翻译: 本发明提供一种适用于电子器件如晶体管,IC,LSI等的封装的新型环氧系固化树脂组合物。 组合物包含环氧化合物,酚醛清漆型酚醛树脂作为固化剂,有机膦化合物如三苯基膦和三月桂基膦作为固化促进剂和无机填料。 通过组合使用酚醛清漆型酚醛树脂和有机膦化合物获得的优点是非常特异的,除了具有优异的高温电气性能和抗湿性之外,树脂组合物在模塑中赋予显着的流动性和储存稳定性 由其模制的固化的成形制品的电阻。

    Method for resin encapsulation of a semiconductor device and a resin
composition therefor
    2.
    发明授权
    Method for resin encapsulation of a semiconductor device and a resin composition therefor 失效
    半导体装置的树脂封装方法及其树脂组合物

    公开(公告)号:US4772644A

    公开(公告)日:1988-09-20

    申请号:US459220

    申请日:1983-01-19

    摘要: While high-performance semiconductor devices encapsulated with a resin composition are subject to the problem of wrong operation due to the alpha-particles emitted from the trace amounts of radioactive impurities, e.g. uranium and thorium, contained in the silica filler incorporated in the resin composition, a means for solving this problem is provided by use of a silicon dioxide powder obtained by the pyrolysis of a volatilizable silicon compound free from radioactive impurities in an oxidizing condition and having an average particle diameter in the range from 0.5 to 100 .mu.m in place of the conventional silica fillers.

    摘要翻译: 虽然用树脂组合物封装的高性能半导体器件由于从微量的放射性杂质发射的α粒子,例如, 包含在树脂组合物中的二氧化硅填料中的铀和钍通过使用通过在氧化条件下热解不含放射性杂质的挥发性硅化合物而获得的二氧化硅粉末来提供解决该问题的方法,并且具有 平均粒径在0.5至100μm的范围内,代替常规的二氧化硅填料。