公开(公告)号：US5705449A

公开(公告)日：1998-01-06

申请号：US761206

申请日：1996-12-06

申请人： Kiyoshi Hirao ,  Manuel E. Brito ,  Shuzo Kanzaki

发明人： Kiyoshi Hirao ,  Manuel E. Brito ,  Shuzo Kanzaki

IPC分类号： C30B1/02 ,  C04B35/584 ,  C04B35/593 ,  C04B35/626 ,  C30B29/62 ,  C04B35/587

CPC分类号： C04B35/5935

摘要： A method for the production of a high-strength high-toughness silicon nitride sinter includes the steps of mixing a silicon nitride powder with a sintering additive, adding to the resultant mixture as seed particles 0.1 to 10% by volume, based on the amount of the mixture, of elongated single crystal .beta.-silicon nitride particles having a larger minor diameter than the average particle diameter of the silicon nitride powder and having an aspect ratio of at least 2, forming the resultant mixture so as to orient the elongated single crystal .beta.-silicon nitride particles as seed particles in a specific direction, and heating the green body to density it and simultaneously induce epitaxial growth of single crystal .beta.-silicon nitride particles, and a high-strength, high-toughness silicon nitride sinter obtained by the method.

摘要翻译： 制造高强度高韧性氮化硅烧结体的方法包括以下步骤：将氮化硅粉末与烧结添加剂混合，将所得混合物作为0.1〜10体积％的种子颗粒，以 该混合物具有比氮化硅粉末的平均粒径小的直径比至少为2的长径比的细长的单晶β-氮化硅颗粒，形成所得混合物以便使细长单晶β - 氮化硅颗粒作为特定方向的种子颗粒，并且加热生坯以使其密度并同时诱导单晶β-氮化硅颗粒的外延生长，以及通过该方法获得的高强度，高韧性氮化硅烧结体 。

公开(公告)号：US5674793A

公开(公告)日：1997-10-07

申请号：US529854

申请日：1995-09-18

申请人： Kiyoshi Hirao ,  Manuel E. Brito ,  Shuzo Kanzaki

发明人： Kiyoshi Hirao ,  Manuel E. Brito ,  Shuzo Kanzaki

IPC分类号： C30B1/02 ,  C04B35/584 ,  C04B35/593 ,  C04B35/626 ,  C30B29/62 ,  C04B35/587

CPC分类号： C04B35/5935

摘要： A method for the production of a high-strength high-toughness silicon nitride sinter includes the steps of mixing a silicon nitride powder with a sintering additive, adding to the resultant mixture as seed particles 0.1 to 10% by volume, based on the amount of the mixture, of elongated single crystal .beta.-silicon nitride particles having a larger minor diameter than the average particle diameter of the silicon nitride powder and having an aspect ratio of at least 2, forming the resultant mixture so as to orient the elongated single crystal .beta.-silicon nitride particles as seed particles in a specific direction, and heating the green body to density it and simultaneously induce epitaxial growth of single crystal .beta.-silicon nitride particles, and a high-strength, high-toughness silicon nitride sinter obtained by the method.

摘要翻译： 制造高强度高韧性氮化硅烧结体的方法包括以下步骤：将氮化硅粉末与烧结添加剂混合，将所得混合物作为0.1〜10体积％的种子颗粒，以 该混合物具有比氮化硅粉末的平均粒径小的直径比至少为2的长径比的细长的单晶β-氮化硅颗粒，形成所得混合物以便使细长单晶β - 氮化硅颗粒作为特定方向的种子颗粒，并且加热生坯以使其密度并同时诱导单晶β-氮化硅颗粒的外延生长，以及通过该方法获得的高强度，高韧性氮化硅烧结体 。

公开(公告)号：US5968426A

公开(公告)日：1999-10-19

申请号：US787019

申请日：1997-01-29

申请人： Kiyoshi Hirao ,  Manuel E. Brito ,  Motohiro Toriyama ,  Syuzo Kanzaki ,  Hisayuki Imamura ,  Takene Hirai ,  Yasuhiro Shigegaki

发明人： Kiyoshi Hirao ,  Manuel E. Brito ,  Motohiro Toriyama ,  Syuzo Kanzaki ,  Hisayuki Imamura ,  Takene Hirai ,  Yasuhiro Shigegaki

IPC分类号： F02B39/00 ,  C04B35/626 ,  C04B38/00 ,  C04B34/584

CPC分类号： C04B38/00

摘要： The present invention relates to a method for producing a porous silicon nitride sintered body having high strength and low thermal conductivity, which comprises of adding more than 10 volume % of rodlike beta-silicon nitride single crystals with a larger mean diameter than that of a silicon nitride raw powder into a mixture comprising the silicon nitride raw powder and a sintering additive, preparing a formed body with rodlike beta-silicon nitride single crystals oriented parallel to the casting plane according to a forming technique such as sheet casting and extrusion forming, sintering said formed body to develop elongated silicon nitride grains from the added rodlike beta-silicon nitride single crystals as nuclei and obtain the sintered body with the elongated grains being dispersed in a complicated state.

摘要翻译： 本发明涉及一种具有高强度和低导热性的多孔氮化硅烧结体的制造方法，该方法包括加入大于10体积％的具有比硅的更大的平均直径的棒状β-氮化硅单晶 氮化物原料粉末混合成包含氮化硅原料粉末和烧结添加剂的混合物，根据成型技术如片材流延和挤出成型制备具有平行于铸造平面取向的棒状β-氮化硅单晶的成形体，烧结所述 从加成的棒状β-氮化硅单晶作为核形成长长的氮化硅晶粒，并获得具有细长晶粒的复合状态的烧结体。

公开(公告)号：US5935888A

公开(公告)日：1999-08-10

申请号：US848224

申请日：1997-04-29

申请人： Motohiro Toriyama ,  Kiyoshi Hirao ,  Manuel E. Brito ,  Syuzo Kanzaki ,  Yasuhiro Shigegaki

发明人： Motohiro Toriyama ,  Kiyoshi Hirao ,  Manuel E. Brito ,  Syuzo Kanzaki ,  Yasuhiro Shigegaki

IPC分类号： B28B3/02 ,  C04B30/02 ,  C04B35/622 ,  C04B35/626 ,  C04B35/64 ,  C04B38/00 ,  C04B35/584

CPC分类号： C04B38/00 ,  C04B30/02 ,  C04B38/0051

摘要： An object of the present invention is to provide a high-porosity, high-strength porous silicon nitride having great tolerance with respect to strain and stress, and a method for producing the same, and the present invention relates to a high-porosity, high-strength porous silicon nitride having great tolerance with respect to strain and stress, characterized in that rodlike grains of silicon nitride with a minor diameter of 0.5 to 10 .mu.m and an aspect ratio of 10 to 100 are oriented in a single direction, and the rest of the structure other than the rodlike grains consists solely of pores with a porosity of 5 to 30%, and further the above-mentioned porous silicon nitride is produced by mixing rodlike particles of silicon nitride with a minor diameter of 0.5 to 10 .mu.m and an aspect ratio of 10 to 100 as the silicon nitride with an auxiliary that serves to bind the rodlike particles, forming a tape in which the silicon nitride rodlike particles are oriented in a single direction by sheet forming, extrusion forming, or another such forming process, and sintering this product in a nitrogen atmosphere after lamination and degreasing of it.

摘要翻译： 本发明的目的是提供一种相对于应变和应力具有很大公差的高孔隙率高强度多孔氮化硅及其制造方法，本发明涉及高孔隙率，高 - 相对于应变和应力具有很大公差的强度多孔氮化硅，其特征在于，小直径为0.5至10μm，长宽比为10至100的氮化硅棒状晶粒沿单一方向取向，并且 杆状颗粒以外的结构的其余部分仅由孔隙率为5〜30％的孔组成，进一步通过将氮化硅的棒状颗粒与0.5〜10μm的小直径混合而制成上述多孔氮化硅 长宽比为10〜100，作为氮化硅与辅助材料，用于粘合棒状颗粒，形成其中氮化硅棒状颗粒沿着单一方向取向的带 等等，形成，挤出成型或另一种这样的成型方法，并在层压和脱脂之后在氮气气氛中烧结该产品。

公开(公告)号：US5866245A

公开(公告)日：1999-02-02

申请号：US773004

申请日：1996-12-23

申请人： Motohiro Toriyama ,  Kiyoshi Hirao ,  Manuel E. Brito ,  Syuzo Kanzaki ,  Yasuhiro Shigegaki

发明人： Motohiro Toriyama ,  Kiyoshi Hirao ,  Manuel E. Brito ,  Syuzo Kanzaki ,  Yasuhiro Shigegaki

IPC分类号： B32B5/10 ,  B32B5/14 ,  B32B18/00 ,  C04B35/584 ,  C04B35/593 ,  C04B35/622 ,  C04B35/58

CPC分类号： C04B35/593 ,  B32B18/00 ,  C04B35/5935 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/658 ,  C04B2237/368 ,  C04B2237/38 ,  C04B2237/525 ,  C04B2237/586 ,  C04B2237/704 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/249967 ,  Y10T428/249969 ,  Y10T428/249981 ,  Y10T428/249987 ,  Y10T428/249988 ,  Y10T428/249991

摘要： The present invention relates to a silicon nitride sintered body having a remarkably increased strain-to-fracture, a low elasticity and high strength, characterized by consisting of a layered structure of alternating porous silicon nitride layers 1 to 1000 .mu.m thick with a porosity of 5 to 70 volume % and dense silicon nitride layers 1 to 1000 .mu.m thick with a porosity of less than 5 volume %, being layered as materials with optional tiers. In addition, this invention relates to a method for producing the silicon nitride sintered body as described above, which comprises of forming dense layers and porous layers by sheet casting or extrusion forming so as to prepare the layers to be capable of 1 to 1000 .mu.m thick after sintering, stacking them to obtain layered materials with optional tiers and sintering them at 1600.degree. to 2100 .degree. C. under a nitrogen atmosphere.

摘要翻译： 本发明涉及一种具有显着增加的应变 - 断裂，低弹性和高强度的氮化硅烧结体，其特征在于，由层叠结构的层叠结构构成，所述交替多孔氮化硅层的厚度为1-1000μm，孔隙率为 5至70体积％，并且具有小于5体积％的孔隙率为1至1000μm厚的致密氮化硅层，被层叠为具有任选层的材料。 另外，本发明涉及一种如上所述的氮化硅烧结体的制造方法，其特征在于，通过片状铸造或挤压成形来形成致密层和多孔层，以制备能够达到1〜1000μm的层 烧结后将其堆叠，得到可选层的层状材料，并在氮气氛下在1600〜2100℃烧结。