公开(公告)号：US20050205515A1

公开(公告)日：2005-09-22

申请号：US11011111

申请日：2004-12-15

申请人： Koichiro Saga ,  Hiroya Watanabe ,  Tomoyuki Azuma

发明人： Koichiro Saga ,  Hiroya Watanabe ,  Tomoyuki Azuma

IPC分类号： H01L21/306 ,  B81B3/00 ,  B81C1/00 ,  C09K13/08 ,  H01L21/304 ,  H01L21/308 ,  H01L21/31 ,  H01L29/84 ,  H01L21/302 ,  B44C1/22

CPC分类号： B81C1/00849 ,  B81C2201/117

摘要： A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, and a cleaning step. By using a supercritical carbon dioxide fluid containing a fluorine compound, a water-soluble organic solvent and water as the treating fluid, the sacrificial layer is removed in a short period of time with a small amount of the treating fluid without any damage to the structural body.

摘要翻译： 一种结构体，包括通过空气间隙形成在基底上的结构层，其中结构层用作微型可移动元件，是通过包括依次形成由硅制成的牺牲层的成膜步骤的方法制造的 氧化膜和基板上的结构层，气隙形成步骤，通过用处理流体蚀刻去除牺牲层，以在基板和结构层之间形成气隙，以及清洁步骤。 通过使用含有氟化合物，水溶性有机溶剂和水作为处理液的超临界二氧化碳流体，在短时间内用少量的处理流体去除牺牲层，而不会对结构造成任何损害 身体。

公开(公告)号：US07670496B2

公开(公告)日：2010-03-02

申请号：US11011111

申请日：2004-12-15

申请人： Koichiro Saga ,  Hiroya Watanabe ,  Tomoyuki Azuma

发明人： Koichiro Saga ,  Hiroya Watanabe ,  Tomoyuki Azuma

IPC分类号： H01L21/302

CPC分类号： B81C1/00849 ,  B81C2201/117

摘要： A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, and a cleaning step. By using a supercritical carbon dioxide fluid containing a fluorine compound, a water-soluble organic solvent and water as the treating fluid, the sacrificial layer is removed in a short period of time with a small amount of the treating fluid without any damage to the structural body.

摘要翻译： 一种结构体，包括通过空气间隙形成在基底上的结构层，其中结构层用作微型可移动元件，是通过包括依次形成由硅制成的牺牲层的成膜步骤的方法制造的 氧化膜和基板上的结构层，气隙形成步骤，通过用处理流体蚀刻去除牺牲层，以在基板和结构层之间形成气隙，以及清洁步骤。 通过使用含有氟化合物，水溶性有机溶剂和水作为处理液的超临界二氧化碳流体，在短时间内用少量的处理流体去除牺牲层，而不会对结构造成任何损害 身体。

公开(公告)号：US20090221143A1

公开(公告)日：2009-09-03

申请号：US12066103

申请日：2006-09-05

申请人： Koichiro Saga ,  Kenji Yamada ,  Tomoyuki Azuma ,  Yuji Murata

发明人： Koichiro Saga ,  Kenji Yamada ,  Tomoyuki Azuma ,  Yuji Murata

IPC分类号： H01L21/3205 ,  H01L21/306 ,  C11D7/32

CPC分类号： H01L21/76808 ,  H01L21/02063 ,  H01L21/76814 ,  H01L21/76883 ,  Y10S438/906

摘要： A method of cleaning for removing metal compounds attached to a surface of a substrate, wherein the cleaning is conducted by supplying a supercritical fluid of carbon dioxide comprising at least one of triallylamine and tris(3-aminopropyl)amine to the surface of the substrate and a process for producing a semiconductor device using the method of cleaning are provided. In accordance with the method of cleaning and the method for producing a semiconductor device using the method, etching residues or polishing residues containing metal compounds are efficiently removed selectively from the electroconductive material forming the electroconductive layer. When the electroconductive layer is a wiring, an increase in resistance due to residual metal compounds can be suppressed, and an increase in the leak current due to diffusion of the metal from the metal compounds to the insulating film can be prevented. Therefore, reliability on the wiring is improved, and the yield of the semiconductor device can be increased.

摘要翻译： 一种用于去除附着在基材表面上的金属化合物的清洗方法，其中通过将包含三烯丙基胺和三（3-氨基丙基）胺中的至少一种的二氧化碳的超临界流体供应到基材的表面进行清洗， 提供了使用清洗方法制造半导体器件的方法。 根据使用该方法的清洗方法和制造半导体器件的方法，从形成导电层的导电材料中选择性地有效地除去含有金属化合物的残留物或抛光残渣。 当导电层是布线时，可以抑制由于残留的金属化合物引起的电阻的增加，并且可以防止由金属从金属化合物扩散到绝缘膜的漏电流的增加。 因此，能够提高布线的可靠性，能够提高半导体装置的收率。

公开(公告)号：US07767585B2

公开(公告)日：2010-08-03

申请号：US12066103

申请日：2006-09-05

申请人： Koichiro Saga ,  Kenji Yamada ,  Tomoyuki Azuma ,  Yuji Murata

发明人： Koichiro Saga ,  Kenji Yamada ,  Tomoyuki Azuma ,  Yuji Murata

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76808 ,  H01L21/02063 ,  H01L21/76814 ,  H01L21/76883 ,  Y10S438/906

摘要： A method of cleaning for removing metal compounds attached to a surface of a substrate, wherein the cleaning is conducted by supplying a supercritical fluid of carbon dioxide comprising at least one of triallylamine and tris(3-aminopropyl)amine to the surface of the substrate and a process for producing a semiconductor device using the method of cleaning are provided. In accordance with the method of cleaning and the method for producing a semiconductor device using the method, etching residues or polishing residues containing metal compounds are efficiently removed selectively from the electroconductive material forming the electroconductive layer. When the electroconductive layer is a wiring, an increase in resistance due to residual metal compounds can be suppressed, and an increase in the leak current due to diffusion of the metal from the metal compounds to the insulating film can be prevented. Therefore, reliability on the wiring is improved, and the yield of the semiconductor device can be increased.

摘要翻译： 一种用于去除附着在基材表面上的金属化合物的清洗方法，其中通过将包含三烯丙基胺和三（3-氨基丙基）胺中的至少一种的二氧化碳的超临界流体供应到基材的表面进行清洗， 提供了使用清洗方法制造半导体器件的方法。 根据使用该方法的清洗方法和制造半导体器件的方法，从形成导电层的导电材料中选择性地有效地除去含有金属化合物的残留物或抛光残渣。 当导电层是布线时，可以抑制由于残留的金属化合物引起的电阻的增加，并且可以防止由金属从金属化合物扩散到绝缘膜的漏电流的增加。 因此，能够提高布线的可靠性，能够提高半导体装置的收率。

公开(公告)号：US20080066787A1

公开(公告)日：2008-03-20

申请号：US11790536

申请日：2007-04-26

申请人： Koichiro Saga

发明人： Koichiro Saga

IPC分类号： F15B21/06

CPC分类号： H01L21/67086 ,  H01L21/67057

摘要： A method for treating a substrate using a supercritical fluid as a medium is disclosed. The method includes the steps of mixing the supercritical fluid with a chemical under a pressure higher than a pressure for treating the substrate, and subsequently treating the substrate with the supercritical fluid mixed with the chemical at the pressure for treating the substrate.

摘要翻译： 公开了使用超临界流体作为介质处理基板的方法。 该方法包括以下步骤：在高于用于处理基材的压力的压力下混合超临界流体与化学品，然后在处理基材的压力下用与化学品混合的超临界流体处理基材。

公开(公告)号：US06267158B1

公开(公告)日：2001-07-31

申请号：US09590074

申请日：2000-06-09

申请人： Koichiro Saga

发明人： Koichiro Saga

IPC分类号： B65B104

CPC分类号： H01L21/67389 ,  H01L21/67253 ,  H01L21/67393 ,  H01L21/67769 ,  H01L21/67772

摘要： To provide a sealed container, a storage apparatus, an electronic part conveyance system and methods of storage and conveyance of an electronic part able to inhibit growth of a native oxide film on the electronic part without an excessive supply of an inert gas. A sealed container storing an electronic part inside it and maintaining the inside at an inert gas atmosphere, including an oxygen concentration meter, a moisture concentration meter, a clock means for measuring an elapsed time from when storing the electronic part in the inside, a means for calculating integrals of concentration of oxygen and concentration of moisture with respect to time, a judging means for comparing the integrals with predetermined reference values (thresholds) set in advance and judging their magnitudes compared with the thresholds, and an alarm means for warning that at least one of the integral of the concentration of oxygen and the integral of the concentration of moisture has exceeded the threshold, and methods of storage and conveyance of an electronic part using the same.

摘要翻译： 提供一种密封容器，存储装置，电子部件输送系统以及能够在不过量供应惰性气体的情况下，能够抑制电子部件上的自然氧化膜生长的电子部件的储存和输送方法。 将电子部件保持在内部并将内部保持在惰性气体气氛中，包括氧浓度计，水分浓度计，用于测量从内部存储电子部件起的经过时间的时钟装置，用于计算积分的装置 氧浓度和水分浓度相对于时间的判断装置，用于将积分与预先设定的预定参考值（阈值）进行比较以及与阈值相比判定其大小的判断装置，以及警报装置，用于警告以下中的至少一个： 氧浓度的积分和水分浓度的积分已经超过阈值，而且 使用其的电子部件的存储和传送方法。

公开(公告)号：US5679171A

公开(公告)日：1997-10-21

申请号：US611673

申请日：1996-03-06

申请人： Koichiro Saga ,  Sakuo Koyata ,  Takeshi Hattori

发明人： Koichiro Saga ,  Sakuo Koyata ,  Takeshi Hattori

IPC分类号： B08B3/08 ,  H01L21/304 ,  H01L21/306 ,  C03C23/00 ,  B08B3/00

CPC分类号： H01L21/02052 ,  B08B3/08

摘要： A method of cleaning the surface of a substrate, wherein the first step of the process of cleaning the substrate including a step of cleaning the surface of the substrate by an acidic solution, oxidizing solution, or alkaline solution, comprises a step of removing the natural oxide film formed on the surface of the substrate.

摘要翻译： 一种清洗基材表面的方法，其中清洗基材的方法的第一步包括用酸性溶液，氧化溶液或碱性溶液清洗基材表面的步骤，包括除去天然物质的步骤 氧化膜形成在基板的表面上。

公开(公告)号：US06536136B2

公开(公告)日：2003-03-25

申请号：US09769353

申请日：2001-01-26

申请人： Koichiro Saga

发明人： Koichiro Saga

IPC分类号： F26B2500

CPC分类号： H01L21/67772 ,  H01L21/67017 ,  Y10S414/135 ,  Y10S414/139

摘要： To provide a substrate transfer apparatus capable of forming a hermetically-closed space integrated between a normal substrate processing apparatus which is not integrated with a substrate transfer unit and a substrate transfer container, the substrate transfer apparatus includes a main body in a box-like shape containing a substrate W, an upper opening (first opening) provided at the main body and connected to a bottom opening (substrate transfer port) of a container while maintaining an air tight state against outside air, a side wall opening (second opening) provided at the main body and connected to a substrate transfer port of the transfer processing apparatus while maintaining the air tight state against outside air, an exhaust pipe connected to the main body, an opening/closing mechanism for opening and closing a bottom lid relative to the bottom opening in a state in which the upper opening and the bottom opening of the container are connected and transfer mechanisms installed in the main body for transferring the substrate W.

摘要翻译： 为了提供能够形成集成在不与基板转印单元集成的正常基板处理装置和基板转印容器之间的气密封闭空间的基板输送装置，基板输送装置包括：箱体状的主体 包含基板W，设置在主体上并连接到容器的底部开口（基板输送口）的上开口（第一开口），同时保持对外部空气的气密状态，设置有侧壁开口（第二开口） 在主体处连接到转印处理设备的基板传送端口，同时保持对外部空气的气密状态，连接到主体的排气管，用于相对于主体打开和关闭底盖的打开/关闭机构 在容器的上开口和底部开口连接的状态下的底部开口和安装的传送机构 在用于转移衬底W的主体中。

公开(公告)号：US06533000B2

公开(公告)日：2003-03-18

申请号：US09832196

申请日：2001-04-11

申请人： Koichiro Saga

发明人： Koichiro Saga

IPC分类号： B65B104

CPC分类号： H01L21/67366 ,  H01L21/67393

摘要： A hermetic substrate transportation container permitting storage of an electronic substrate is provided, keeping a rise of internal moisture concentration low, thus preventing generation of natural oxidation film on the surface of the electronic substrate and allowing detection of the contents inside the substrate transportation container, from outside. A container body having an aperture for loading and unloading an electronic substrate, the substrate transportation container comprising a lid for sealing such aperture, in which the container body and the lid are made of a material having an amorphous polyolefin as its main constituent. By constituting the container body and the lid using the amorphous polyolefin with low hygroscopic characteristic as a main constituent, it is possible to keep discharge of moisture from the internal wall thereof low and also to prevent an increase of moisture concentration in the sealed compartment.

摘要翻译： 提供允许电子基板保存的密封基板运输容器，保持内部水分浓度的上升，从而防止在电子基板的表面上产生自然氧化膜，并允许检测基板运输容器内部的内容物 外。 一种具有用于装载和卸载电子基板的孔的容器主体，所述基板输送容器包括用于密封该孔的盖，容器主体和盖由其中以非晶聚烯烃为主要成分的材料制成。 通过使用具有低吸湿特性的非晶聚烯烃作为主要成分构成容器主体和盖子，可以使内壁的水分保持较低，并且还可以防止密封室中的水分浓度的增加。

公开(公告)号：US6044874A

公开(公告)日：2000-04-04

申请号：US80919

申请日：1998-05-19

申请人： Koichiro Saga

发明人： Koichiro Saga

IPC分类号： B65D81/20 ,  B65D85/86 ,  H01L21/00 ,  H01L21/02 ,  H01L21/673 ,  B65B31/00

CPC分类号： H01L21/67393 ,  Y10S414/14

摘要： First and second wall portions respectively spread along first and second opposing inner surfaces of a housing portion, and a plurality of vent pores that are distributed along the first and second inner surfaces are formed in the first and second wall portions. Hence, when an ambient gas is supplied to a space between the first inner surface and the first wall portion and another ambient gas is simultaneously discharged from a space between the second inner surface and the second wall surface, a laminar flow of an ambient gas directed from the first inner surface toward the second inner surface is formed to be parallel to a plate-like body held by a base portion.

摘要翻译： 第一壁部分和第二壁部分分别沿壳体部分的第一和第二相对的内表面延伸，并且沿着第一和第二内表面分布的多个排气孔形成在第一和第二壁部分中。 因此，当环境气体被供应到第一内表面和第一壁部分之间的空间并且另外的环境气体同时地从第二内表面和第二壁表面之间的空间排出时，指向的环境气体的层流 从第一内表面朝向第二内表面形成为平行于由基部保持的板状体。