公开(公告)号：US06351006B1

公开(公告)日：2002-02-26

申请号：US09436635

申请日：1999-11-09

申请人： Koji Yamakawa ,  Osamu Arisumi ,  Katsuhiko Hieda ,  Tsunetoshi Arikado ,  Hideyuki Kanai

发明人： Koji Yamakawa ,  Osamu Arisumi ,  Katsuhiko Hieda ,  Tsunetoshi Arikado ,  Hideyuki Kanai

IPC分类号： H01C2994

CPC分类号： H01L27/11502 ,  H01L28/55 ,  H01L28/60

摘要： A semiconductor device comprises a semiconductor substrate and a capacitor provided above the semiconductor substrate and having an upper electrode, a lower electrode, and a dielectric film provided between the upper electrode and the lower electrode. At least one of the electrodes comprises an SrRuO3 film provided near the dielectric film and a conductive film made of conductive material other than SrRuO3 and provided far from the dielectric film.

摘要翻译： 半导体器件包括设置在半导体衬底上方的半导体衬底和电容器，并具有设置在上电极和下电极之间的上电极，下电极和电介质膜。 电极中的至少一个包括设置在电介质膜附近的SrRuO 3膜和由SrRuO 3以外的导电材料制成并且远离电介质膜设置的导电膜。

公开(公告)号：US08119196B2

公开(公告)日：2012-02-21

申请号：US12659071

申请日：2010-02-24

申请人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda

发明人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda

IPC分类号： B05D3/12

CPC分类号： B05B9/04 ,  B05B9/047 ,  B05C11/08 ,  B05C11/10

摘要： A semiconductor manufacturing apparatus comprises a discharge portion discharging a coating liquid onto a substrate; a gas supply tube supplying an inert gas into a liquid container that contains the coating liquid, and pressurizing an interior of the liquid container; a coating liquid supply tube airtightly supplying the coating liquid from the liquid container to the discharge portion using pressurization from the gas supply tube; a first connecting portion capable of attaching and detaching the liquid container to and from the coating liquid supply tube; a second connecting portion capable of attaching and detaching the liquid container to and from the gas supply tube; and a solvent supply tube supplying a solvent, which can dissolve the coating liquid, to the first connecting portion.

摘要翻译： 半导体制造装置包括将涂布液排出到基板上的排出部; 气体供给管，将惰性气体供给到容纳所述涂布液的液体容器内，对所述液体容器的内部进行加压; 涂料液体供给管通过来自气体供给管的加压将涂布液从液体容器密封地供给到排出部; 第一连接部分，其能够将液体容器附接到涂布液供应管和从涂布液供应管分离; 第二连接部分，其能够将液体容器附接到气体供应管和从气体供应管排出; 以及将能够溶解涂布液的溶剂供给到第一连接部的溶剂供给管。

公开(公告)号：US20100159710A1

公开(公告)日：2010-06-24

申请号：US12659071

申请日：2010-02-24

申请人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda

发明人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda

IPC分类号： H01L21/469

CPC分类号： B05B9/04 ,  B05B9/047 ,  B05C11/08 ,  B05C11/10

摘要： A semiconductor manufacturing apparatus comprises a discharge portion discharging a coating liquid onto a substrate; a gas supply tube supplying an inert gas into a liquid container that contains the coating liquid, and pressurizing an interior of the liquid container; a coating liquid supply tube airtightly supplying the coating liquid from the liquid container to the discharge portion using pressurization from the gas supply tube; a first connecting portion capable of attaching and detaching the liquid container to and from the coating liquid supply tube; a second connecting portion capable of attaching and detaching the liquid container to and from the gas supply tube; and a solvent supply tube supplying a solvent, which can dissolve the coating liquid, to the first connecting portion.

摘要翻译： 半导体制造装置包括将涂布液排出到基板上的排出部; 气体供给管，将惰性气体供给到容纳所述涂布液的液体容器内，对所述液体容器的内部进行加压; 涂料液体供给管通过来自气体供给管的加压将涂布液从液体容器密封地供给到排出部; 第一连接部分，其能够将液体容器附接到涂布液供应管和从涂布液供应管分离; 第二连接部分，其能够将液体容器附接到气体供应管和从气体供应管排出; 以及将能够溶解涂布液的溶剂供给到第一连接部的溶剂供给管。

公开(公告)号：US20100055869A1

公开(公告)日：2010-03-04

申请号：US12588087

申请日：2009-10-02

申请人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda ,  Yoshitaka Tsunashima

发明人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda ,  Yoshitaka Tsunashima

IPC分类号： H01L21/762

CPC分类号： H01L27/11521 ,  H01L27/11524

摘要： A method of manufacturing a semiconductor device comprises forming a trench in a semiconductor substrate, forming a first insulating film having a first recessed portion in the trench, forming a coating film so as to fill the first recessed portion therewith, transforming the coating film into a second insulating film, planarizing the second insulating film to expose the first insulating film and the second insulating film, removing at least the second insulating film from the first recessed portion to moderate an aspect ratio for the first recessed portion formed in the trench, thereby forming a second recessed portion therein, and forming a third insulating film on a surface of the semiconductor substrate so as to fill the second recessed portion therewith.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底中形成沟槽，在沟槽中形成具有第一凹陷部分的第一绝缘膜，形成涂膜以便将其涂覆在第一凹部中，将涂膜转变为 第二绝缘膜，平坦化第二绝缘膜以暴露第一绝缘膜和第二绝缘膜，至少从第一凹部去除第二绝缘膜，以调节形成在沟槽中的第一凹部的纵横比，由此形成 在其中形成第二凹部，在半导体衬底的表面上形成第三绝缘膜，以便填充第二凹部。

公开(公告)号：US07618876B2

公开(公告)日：2009-11-17

申请号：US11227252

申请日：2005-09-16

申请人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda ,  Yoshitaka Tsunashima

发明人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda ,  Yoshitaka Tsunashima

IPC分类号： H01L21/76 ,  H01L21/44

CPC分类号： H01L27/11521 ,  H01L27/11524

摘要： A method of manufacturing a semiconductor device comprises forming a trench in a semiconductor substrate, forming a first insulating film having a first recessed portion in the trench, forming a coating film so as to fill the first recessed portion therewith, transforming the coating film into a second insulating film, planarizing the second insulating film to expose the first insulating film and the second insulating film, removing at least the second insulating film from the first recessed portion to moderate an aspect ratio for the first recessed portion formed in the trench, thereby forming a second recessed portion therein, and forming a third insulating film on a surface of the semiconductor substrate so as to fill the second recessed portion therewith.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底中形成沟槽，在沟槽中形成具有第一凹陷部分的第一绝缘膜，形成涂膜以便将其涂覆在第一凹部中，将涂膜转变为 第二绝缘膜，平坦化第二绝缘膜以暴露第一绝缘膜和第二绝缘膜，至少从第一凹部去除第二绝缘膜，以调节形成在沟槽中的第一凹部的纵横比，由此形成 在其中形成第二凹部，在半导体衬底的表面上形成第三绝缘膜，以便填充第二凹部。

公开(公告)号：US20060270170A1

公开(公告)日：2006-11-30

申请号：US11227252

申请日：2005-09-16

申请人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda ,  Yoshitaka Tsunashima

发明人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda ,  Yoshitaka Tsunashima

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  H01L27/11524

摘要： A method of manufacturing a semiconductor device comprises forming a trench in a semiconductor substrate, forming a first insulating film having a first recessed portion in the trench, forming a coating film so as to fill the first recessed portion therewith, transforming the coating film into a second insulating film, planarizing the second insulating film to expose the first insulating film and the second insulating film, removing at least the second insulating film from the first recessed portion to moderate an aspect ratio for the first recessed portion formed in the trench, thereby forming a second recessed portion therein, and forming a third insulating film on a surface of the semiconductor substrate so as to fill the second recessed portion therewith.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底中形成沟槽，在沟槽中形成具有第一凹陷部分的第一绝缘膜，形成涂膜以便将其涂覆在第一凹部中，将涂膜转变为 第二绝缘膜，平坦化第二绝缘膜以暴露第一绝缘膜和第二绝缘膜，至少从第一凹部去除第二绝缘膜，以调节形成在沟槽中的第一凹部的纵横比，由此形成 在其中形成第二凹部，在半导体衬底的表面上形成第三绝缘膜，以便填充第二凹部。

公开(公告)号：US20060134928A1

公开(公告)日：2006-06-22

申请号：US11246145

申请日：2005-10-11

申请人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda

发明人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda

IPC分类号： H01L21/469 ,  B05C5/00

CPC分类号： B05B9/04 ,  B05B9/047 ,  B05C11/08 ,  B05C11/10

摘要： A semiconductor manufacturing apparatus comprises a discharge portion discharging a coating liquid onto a substrate; a gas supply tube supplying an inert gas into a liquid container that contains the coating liquid, and pressurizing an interior of the liquid container; a coating liquid supply tube airtightly supplying the coating liquid from the liquid container to the discharge portion using pressurization from the gas supply tube; a first connecting portion capable of attaching and detaching the liquid container to and from the coating liquid supply tube; a second connecting portion capable of attaching and detaching the liquid container to and from the gas supply tube; and a solvent supply tube supplying a solvent, which can dissolve the coating liquid, to the first connecting portion.

摘要翻译： 半导体制造装置包括将涂布液排出到基板上的排出部; 气体供给管，将惰性气体供给到容纳所述涂布液的液体容器内，对所述液体容器的内部进行加压; 涂料液体供给管通过来自气体供给管的加压将涂布液从液体容器密封地供给到排出部; 第一连接部分，其能够将液体容器附接到涂布液供应管和从涂布液供应管分离; 第二连接部分，其能够将液体容器附接到气体供应管和从气体供应管排出; 以及将能够溶解涂布液的溶剂供给到第一连接部的溶剂供给管。

公开(公告)号：US07105400B2

公开(公告)日：2006-09-12

申请号：US10673262

申请日：2003-09-30

申请人： Keitaro Imai ,  Koji Yamakawa ,  Hiroshi Itokawa ,  Katsuaki Natori ,  Osamu Arisumi ,  Keisuke Nakazawa ,  Bum-ki Moon

发明人： Keitaro Imai ,  Koji Yamakawa ,  Hiroshi Itokawa ,  Katsuaki Natori ,  Osamu Arisumi ,  Keisuke Nakazawa ,  Bum-ki Moon

IPC分类号： H01L21/8234 ,  H01L21/8244 ,  H01L21/336

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film on a semiconductor substrate, forming an alumina film on the underlying region, forming a hole in the alumina film, filling the hole with a bottom electrode film, forming a dielectric film on the bottom electrode film, and forming a top electrode film on the dielectric film.

摘要翻译： 公开了一种制造半导体器件的方法，包括在半导体衬底上形成包括层间绝缘膜的下面的区域，在下面的区域上形成氧化铝膜，在氧化铝膜上形成孔，用底部电极填充孔 膜，在底部电极膜上形成电介质膜，并在电介质膜上形成顶部电极膜。

公开(公告)号：US20050070031A1

公开(公告)日：2005-03-31

申请号：US10673262

申请日：2003-09-30

申请人： Keitaro Imai ,  Koji Yamakawa ,  Hiroshi Itokawa ,  Katsuaki Natori ,  Osamu Arisumi ,  Keisuke Nakazawa ,  Bum-ki Moon

发明人： Keitaro Imai ,  Koji Yamakawa ,  Hiroshi Itokawa ,  Katsuaki Natori ,  Osamu Arisumi ,  Keisuke Nakazawa ,  Bum-ki Moon

IPC分类号： H01L21/00 ,  H01L21/8246 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film on a semiconductor substrate, forming an alumina film on the underlying region, forming a hole in the alumina film, filling the hole with a bottom electrode film, forming a dielectric film on the bottom electrode film, and forming a top electrode film on the dielectric film.

摘要翻译： 公开了一种制造半导体器件的方法，包括在半导体衬底上形成包括层间绝缘膜的下面的区域，在下面的区域上形成氧化铝膜，在氧化铝膜上形成孔，用底部电极填充孔 膜，在底部电极膜上形成电介质膜，并在电介质膜上形成顶部电极膜。

公开(公告)号：US20050245023A1

公开(公告)日：2005-11-03

申请号：US11177281

申请日：2005-07-11

申请人： Osamu Arisumi ,  Keitaro Imai ,  Koji Yamakawa ,  Bum-ki Moon

发明人： Osamu Arisumi ,  Keitaro Imai ,  Koji Yamakawa ,  Bum-ki Moon

IPC分类号： H01L21/02 ,  H01L21/8234

CPC分类号： H01L28/56 ,  H01L28/55

摘要： A semiconductor device comprises a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode and made of a perovskite type ferroelectrics containing Pb, Zr, Ti and O, the dielectric film comprising a first portion formed of a plurality of crystal grains partitioned by grain boundaries having a plurality of directions.

摘要翻译： 半导体器件包括底电极，顶电极和设置在底电极和顶电极之间并由包含Pb，Zr，Ti和O的钙钛矿型铁电体制成的电介质膜，该电介质膜包括由第一部分形成的第一部分 由具有多个方向的晶界划分的多个晶粒。