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公开(公告)号:US20210188630A1
公开(公告)日:2021-06-24
申请号:US17101140
申请日:2020-11-23
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor: Young Suk JO , Yong Ha PARK , Yeong Cheon KIM , Hyang Soo JEONG , Yong Min KIM , Hyun Tae SOHN , Chang Won YOON , Suk Woo NAM , Jong Hee HAN
Abstract: The present disclosure relates to a hydrogen purification/storage apparatus and method using a liquid organic hydrogen carrier (LOHC).
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公开(公告)号:US20220362748A1
公开(公告)日:2022-11-17
申请号:US17816154
申请日:2022-07-29
Applicant: Korea Institute of Science and Technology
Inventor: Young Suk JO , Jun Young CHA , Hyang Soo JEONG , Yong Min KIM , Hyun Tae SOHN , Sung Pil YOON , Suk Woo NAM , Taik Jin LEE , Chang Won YOON , Jong Hee HAN
IPC: B01J23/46 , B01J27/24 , B01J35/08 , B01J35/02 , B01J35/00 , B01J37/02 , B01J37/08 , C01B3/04 , C01B3/02 , C01C1/04
Abstract: The present invention relates to a catalyst in which a catalytic metal is supported on a support including a single-crystalline hexagonal material, and a preparation method therefor, wherein the catalyst can be effectively used in ammonia dehydrogenation or ammonia synthesis.
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公开(公告)号:US20230001377A1
公开(公告)日:2023-01-05
申请号:US17897686
申请日:2022-08-29
Applicant: Korea Institute of Science and Technology
Inventor: Young Suk JO , Arash BADAKHSH , Jun Young CHA , Young Cheon KIM , Hyang Soo JEONG , Yong Min KIM , Hyun Tae SOHN , Seong Cheol JANG , Sung Pil YOON , Suk Woo NAM , Taik Jin LEE , Chang Won YOON , Jong Hee HAN
Abstract: The present invention relates to a hydrogen production reactor comprising a high-efficiency composite having a high thermal conductivity and an antioxidant property. Specifically, the hydrogen production reactor comprises: a first region in which a combustion reaction of fuel occurs; a second region in which a hydrogen extraction reaction occurs; a metal substrate that partitions the first region and the second region; and a coating layer that comprises boron nitride (BN) and is formed on at least one surface of the metal substrate, wherein heat generated in the first region is transferred to the second region through the metal substrate.
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