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公开(公告)号:US20250078918A1
公开(公告)日:2025-03-06
申请号:US18819404
申请日:2024-08-29
Inventor: Jongsun PARK , Kyeong-ho LEE , Junwoo PARK
IPC: G11C11/419 , G06F7/544 , G11C11/412
Abstract: Disclosed is a computing-in-memory device, which includes a memory cell array including a plurality of local arrays that generates a first output signal and a second output signal by performing a multiply-accumulate (MAC) operation on an input signal applied through a plurality of operation word lines and a stored weight, a reference voltage generator that generates a reference voltage by sharing charges of the first output signal with adjacent global bit lines, and an analog-to-digital converter that compares the reference voltage with the second output signal and converts the second output signal into a digital signal based on a result of the comparison.
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2.
公开(公告)号:US20240127873A1
公开(公告)日:2024-04-18
申请号:US18342013
申请日:2023-06-27
Inventor: Jongsun PARK , Joonhyung KIM , Kyeong-ho LEE
CPC classification number: G11C7/16 , G11C7/1069 , G11C8/08
Abstract: Disclosed is a computing-in-memory device, which includes a memory cell array including an analog multiplication unit that performs a multiply-accumulate (MAC) operation on a pre-stored weight and a first analog voltage corresponding to multi-bit input data, and a driver that applies the multi-bit input data to the analog multiplication unit, and the analog multiplication unit includes a digital-to-analog converter that converts the multi-bit input data into the first analog voltage.
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