摘要:
Disclosed is a method of manufacturing a master mold having an uneven pattern which includes wide and narrow concave portions using a reactive ion etching process. The method is capable of manufacturing a master mold improved in the uniformity of concave portions of the uneven pattern by performing a main etching step in which etching is performed, using an original plate which includes a processing target layer and a foundation layer, on the processing target layer using the foundation layer as an etch stop layer and an extra etching step in which etching is performed on the original plate degraded by the main etching step in the uniformity of concave portions in order to improve the uniformity using an etching gas which includes a first gas capable of etching the foundation layer and producing a deposit with a bias power of not greater than 15 W.
摘要:
A chemical amplification resist composition that is used for preparation of a mold, and a mold preparation method and a resist film each using the composition are provided.
摘要:
A magnetic transfer master disk including a magnetic layer and exhibiting excellent shape stability of a protrusion/recess pattern is provided. An initial layer formed of a conductive film is formed on a surface of a master on which a pattern of minute protrusions/recesses is formed, and then a magnetic layer (principal layer) is formed on the initial layer, and then, a metal layer is formed by means of electroforming. A duplicate in which the initial layer, the magnetic layer and the metal layer have been integrated is peeled off from the master, thereby obtaining a magnetic transfer master disk, which is a duplicate in which the magnetic layer and the initial layer are deposited on the protruded/recessed surface of the metal layer.
摘要:
This invention accurately detects an etch amount of an etching target layer irrespective of a type of a mask layer. A light La is reflected by an upper surface of a photoresist mask layer 316 and a bottom of a hole H. Thereby a reflected light La1 and a reflected light La2 are obtained. The reflected lights La1 and La2 interfere with each other, thereby generating an interference light Lai. A light Lb is reflected by an interface between the photoresist mask layer 316 and a polysilicon film 304, and the upper surface of the photoresist mask layer 316. Thereby a reflected light Lb1 and a reflected light Lb2 are obtained. The reflected lights Lb1 and Lb2 interfere with each other, thereby generating an interference light Lb1. Using the interference lights Lai and Lbi, an etch amount of the polysilicon film 304 is calculated.
摘要:
A method for producing an original master used to produce a mold structure, the method including: forming a resist layer on a surface of an original master substrate, and exposing and developing the resist layer so as to form on the surface of the substrate an original master resist pattern substantially in the shape of concentric arcs utilized to form an original master concavo-convex pattern; selectively etching the resist pattern, under one of a condition that the resist pattern on an inner circumferential side is etched to a greater extent than the resist pattern on an outer circumferential side and a condition that the resist pattern on the outer circumferential side is etched to a greater extent than the resist pattern on the inner circumferential side; and etching the substrate with the selectively etched resist pattern serving as a mask so as to form the original master concavo-convex pattern.
摘要:
This invention accurately detects an etch amount of an etching target layer irrespective of a type of a mask layer. A light La is reflected by an upper surface of a photoresist mask layer 316 and a bottom of a hole H. Thereby a reflected light La1 and a reflected light La2 are obtained. The reflected lights La1 and La2 interfere with each other, thereby generating an interference light Lai. A light Lb is reflected by an interface between the photoresist mask layer 316 and a polysilicon film 304, and the upper surface of the photoresist mask layer 316. Thereby a reflected light Lb1 and a reflected light Lb2 are obtained. The reflected lights Lb1 and Lb2 interfere with each other, thereby generating an interference light Lbi. Using the interference lights Lai and Lbi, an etch amount of the polysilicon film 304 is calculated.
摘要:
This invention accurately detects an etch amount of an etching target layer irrespective of a type of a mask layer. A light La is reflected by an upper surface of a photoresist mask layer 316 and a bottom of a hole H. Thereby a reflected light La1 and a reflected light La2 are obtained. The reflected lights La1 and La2 interfere with each other, thereby generating an interference light Lai. A light Lb is reflected by an interface between the photoresist mask layer 316 and a polysilicon film 304, and the upper surface of the photoresist mask layer 316. Thereby a reflected light Lb1 and a reflected light Lb2 are obtained. The reflected lights Lb1 and Lb2 interfere with each other, thereby generating an interference light Lb1. Using the interference lights Lai and Lbi, an etch amount of the polysilicon film 304 is calculated.
摘要:
A chemical amplification resist composition that is used for preparation of a mold, and a mold preparation method and a resist film each using the composition are provided.
摘要:
A magnetic transfer master disk including a magnetic layer and exhibiting excellent shape stability of a protrusion/recess pattern is provided. An initial layer formed of a conductive film is formed on a surface of a master on which a pattern of minute protrusions/recesses is formed, and then a magnetic layer (principal layer) is formed on the initial layer, and then, a metal layer is formed by electroforming. A duplicate in which the initial layer, the magnetic layer and the metal layer have been integrated is peeled off from the master, thereby obtaining a magnetic transfer master disk, which is a duplicate in which the magnetic layer and the initial layer are deposited on the protruded/recessed surface of the metal layer.