公开(公告)号：US07875117B2

公开(公告)日：2011-01-25

申请号：US11573387

申请日：2005-08-11

申请人： Kouzo Nakamura ,  Susumu Maeda ,  Kouichirou Hayashida ,  Takahisa Sugiman ,  Katsuhiko Sugisawa

发明人： Kouzo Nakamura ,  Susumu Maeda ,  Kouichirou Hayashida ,  Takahisa Sugiman ,  Katsuhiko Sugisawa

IPC分类号： C30B29/06

CPC分类号： C30B29/06 ,  C30B15/00 ,  H01L21/3225 ,  Y10T117/1004 ,  Y10T117/1056

摘要： An epitaxial wafer and a high-temperature heat treatment wafer having an excellent gettering capability are obtained by performing epitaxial growth or a high-temperature heat treatment. A relational equation relating the density to the radius of an oxygen precipitate introduced in a silicon crystal doped with nitrogen at the time of crystal growth can be derived from the nitrogen concentration and the cooling rate around 1100° C. during crystal growth, and the oxygen precipitate density to be obtained after a heat treatment can be predicted from the derived relational equation relating the oxygen precipitate density to the radius, the oxygen concentration, and the wafer heat treatment process. Also, an epitaxially grown wafer and a high-temperature annealed wafer whose oxygen precipitate density has been controlled to an appropriate density are obtained, using conditions predicted by the method.

摘要翻译： 通过进行外延生长或高温热处理，获得具有优异吸气能力的外延晶片和高温热处理晶片。 引起晶体生长时掺杂氮的硅晶体中的密度与引入氧沉淀的半径的关系式可以从晶体生长期间的氮浓度和1100℃附近的冷却速率得出，并且氧气 可以从氧沉淀密度与半径，氧浓度和晶片热处理过程相关的导出关系式来预测热处理后得到的沉淀物密度。 此外，使用通过该方法预测的条件，获得外延生长的晶片和氧沉淀物密度已被控制到适当密度的高温退火晶片。

公开(公告)号：US20070218570A1

公开(公告)日：2007-09-20

申请号：US11573387

申请日：2005-08-11

申请人： Kouzo Nakamura ,  Susumu Maeda ,  Kouichirou Hayashida ,  Takahisa Sugiman ,  Katsuhiko Sugisawa

发明人： Kouzo Nakamura ,  Susumu Maeda ,  Kouichirou Hayashida ,  Takahisa Sugiman ,  Katsuhiko Sugisawa

IPC分类号： H01L21/66

CPC分类号： C30B29/06 ,  C30B15/00 ,  H01L21/3225 ,  Y10T117/1004 ,  Y10T117/1056

摘要： An epitaxial wafer and a high-temperature heat treatment wafer having an excellent gettering capability are obtained by performing epitaxial growth or a high-temperature heat treatment. A relational equation relating the density to the radius of an oxygen precipitate introduced in a silicon crystal doped with nitrogen at the time of crystal growth can be derived from the nitrogen concentration and the cooling rate around 1100° C. during crystal growth, and the oxygen precipitate density to be obtained after a heat treatment can be predicted from the derived relational equation relating the oxygen precipitate density to the radius, the oxygen concentration, and the wafer heat treatment process. Also, an epitaxially grown wafer and a high-temperature annealed wafer whose oxygen precipitate density has been controlled to an appropriate density are obtained, using conditions predicted by the method.

摘要翻译： 通过进行外延生长或高温热处理，获得具有优异吸气能力的外延晶片和高温热处理晶片。 引起晶体生长时掺杂氮的硅晶体中的密度与引入氧沉淀的半径的关系式可以从晶体生长期间的氮浓度和1100℃附近的冷却速率得出，并且氧气 可以从氧沉淀密度与半径，氧浓度和晶片热处理过程相关的导出关系式来预测热处理后得到的沉淀物密度。 此外，使用通过该方法预测的条件，获得外延生长的晶片和氧沉淀物密度已被控制到适当密度的高温退火晶片。

公开(公告)号：US20070252239A1

公开(公告)日：2007-11-01

申请号：US11578814

申请日：2005-04-22

申请人： Susumu Maeda ,  Takahisa Sugiman ,  Shinya Sadohara ,  Shiro Yoshino ,  Kouzo Nakamura

发明人： Susumu Maeda ,  Takahisa Sugiman ,  Shinya Sadohara ,  Shiro Yoshino ,  Kouzo Nakamura

IPC分类号： H01L29/167 ,  H01L21/322

CPC分类号： H01L21/3225

摘要： A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing atmosphere. The heat-treatment method is provided for forming a desired internal defect density distribution by controlling a nitrogen concentration distribution in a depth direction of the silicon wafer for heat-treatment, the method including heat-treating a predetermined silicon wafer used for manufacturing a silicon wafer having a denuded zone in the vicinity of the surface thereof.

摘要翻译： 提供了能够通过在含氮气氛中在RTA之后任意控制晶片BMD密度的深度方向上的M形分布，从而普遍地控制对制造商对制造商的需求可以不同的接近吸气结构的方法。 提供了通过控制用于热处理的硅晶片的深度方向上的氮浓度分布来形成期望的内部缺陷密度分布的热处理方法，该方法包括热处理用于制造硅晶片的预定硅晶片 在其表面附近具有剥离区域。

公开(公告)号：US07759227B2

公开(公告)日：2010-07-20

申请号：US11578814

申请日：2005-04-22

申请人： Susumu Maeda ,  Takahisa Sugiman ,  Shinya Sadohara ,  Shiro Yoshino ,  Kouzo Nakamura

发明人： Susumu Maeda ,  Takahisa Sugiman ,  Shinya Sadohara ,  Shiro Yoshino ,  Kouzo Nakamura

IPC分类号： H01L21/322 ,  H01L29/167

CPC分类号： H01L21/3225

摘要： A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing atmosphere. The heat-treatment method is provided for forming a desired internal defect density distribution by controlling a nitrogen concentration distribution in a depth direction of the silicon wafer for heat-treatment, the method including heat-treating a predetermined silicon wafer used for manufacturing a silicon wafer having a denuded zone in the vicinity of the surface thereof.

摘要翻译： 提供了能够通过在含氮气氛中在RTA之后任意控制晶片BMD密度的深度方向上的M形分布，从而普遍地控制对制造商对制造商的需求可以不同的接近吸气结构的方法。 提供了通过控制用于热处理的硅晶片的深度方向上的氮浓度分布来形成期望的内部缺陷密度分布的热处理方法，该方法包括热处理用于制造硅晶片的预定硅晶片 在其表面附近具有剥离区域。

公开(公告)号：US08992791B2

公开(公告)日：2015-03-31

申请号：US12569929

申请日：2009-09-30

申请人： Kazuaki Kozasa ,  Tomonori Kawasaki ,  Takahisa Sugiman ,  Hironori Nishimura

发明人： Kazuaki Kozasa ,  Tomonori Kawasaki ,  Takahisa Sugiman ,  Hironori Nishimura

IPC分类号： H01L21/02

CPC分类号： H01L21/02046 ,  H01L21/02052 ,  H01L21/02054

摘要： A silicon wafer surface other than a defect is oxidized by ozone to form a silicon oxide film. A hydrofluoric acid is sprayed and subsequently a cleaning gas is sprayed onto the surface of the silicon wafer.

摘要翻译： 除了缺陷之外的硅晶片表面被臭氧氧化以形成氧化硅膜。 喷射氢氟酸，随后将清洁气体喷涂到硅晶片的表面上。